• 세라미스트
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• 제22권4호
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• pp.332-349
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• 2019

Ceramic thin films are key materials for fundamental electronic devices such as transistors and capacitors which are highly important for the state-of-the-art electronic products. Their characteristic dielectric properties enable accurate control of current conduction through channel of transistors and stored charges in capacitor electrodes. The electronic conduction in ceramic thin films is one of the most important part to understand the electrical properties of electronic device based on ceramic thin films. There have been numerous papers dealing with the electronic conduction mechanisms in emerging ceramic thin films for future electronic devices, but these studies have been rarely reviewed. Another interesting electrical characterization technique is one based on electrical pulses and following transient responses, which can be used to examine physical and chemical changes in ceramic thin films. In this review, studies on various conduction mechanisms through ceramic thin films and electrical characterization based on electric pulses are comprehensively reviewed.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

• 한국지반공학회논문집
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• 제39권8호
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• pp.29-39
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• 2023

흙은 간극수와 이중층수를 통해 전기적 흐름이 발생하기 때문에 간극수 및 이중층수의 연결성, 즉 포화도에 따라 전기전도도가 변화한다. 본 연구에서는 간극수 전도가 지배적인 사질토와 표면 전도 효과가 두드러진 세립토에서 포화도에 따른 전기전도도를 분석하고, 수정된 Archie의 방정식을 통해 불포화토의 전기전도도를 표면 전도와 간극수 전도의 합으로 표현하고자 한다. 4개의 전극이 설치된 플라스틱 셀에 다양한 포화도(40%-100%)와 간극률(0.45-0.82)를 갖는 시료를 조성하였으며, 간극수의 농도를 조절하기 위해 시료 조성에 사용된 간극수는 0M(증류수)-0.5M NaCl 용액을 사용하였다. 시험 결과, 사질토의 전기전도도는 포화도의 지수함수로 표현되었으며, 포화도의 지수는 간극수의 농도와 관계없이 1.93로 결정되었다. 반면 세립토의 경우, 포화도의 지수는 간극수의 농도에 따라 큰 차이를 보였다. 이는 각 간극수의 농도에서 흙의 전기전도도에 대한 표면전도의 상대적인 크기가 다르기 때문이다. 다시 말해, 포화도가 간극수전도와 표면전도에 미치는 영향이 다르며, 수정된 Archie의 방정식으로 흙의 전기전도도를 예측하기 위해서는 간극수 전도와 표면 전도에 각각 다른 포화도의 지수를 사용해야함을 의미한다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.6-10
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• 2018

Organic light emitting devices have attracted the attention of many people because of their high potential for self-emission and flexible display devices. However, due to limitations in device efficiency and lifetime, partial commercialization is underway. In this paper, we have investigated the electrical conduction mechanism of the organic light emitting device by the temperature and the thickness of the light emitting layer through the current - voltage characteristics with respect to the conduction mechanism directly affecting the efficiency and lifetime of the organic light emitting device. Through the study, it was found that the conduction in the low electric field region is caused by the movement of the heat excited charge in the ohmic region and the tunneling of the electric charge due to the high electric field in the high electric field region.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.294-297
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• 1997

A study has been carried out electrical conduction properties of synthetic fluids No. 2 of KS class VII used for insulating and cooling the power device. BTA(Benzotrizole) as the streaming electrification suppressant additive is added to the oil, and the change of physical and electrical properties due to different BTA concentration is investgated. From the result of FTIR spectrum, it is confirmed that the absorpption peak in wavenumber 3400-3450[cm$\sub$-1/] is smaller and disappered by adding BTA to the oil. It is considered that the effective content of BTA is about 10[ppm] from the result of electrical conduction experiment.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2310-2318
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• 2018

Critical conduction mode (CRM) operation is more efficient than continuous conduction mode (CCM) operation at low power levels because of the valley switching of switches and elimination of the reverse recovery losses of boost diodes. When using a sensorless digital control method, an error occurs between the actual and the estimated current. Because of the error, it operates as CCM or discontinuous conduction mode (DCM) during CRM operation and also has an adverse effect on THD of input current. In this paper, a current sensorless technique is presented in an inverter system using a bridgeless boosted power factor correction converter, and a compensation method is proposed to reduce CRM calculation error. The validity of the proposed method is verified by simulation and experiment.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2014년도 제50차 하계학술대회논문집 22권2호
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• pp.389-390
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• 2014

The electrical conduction properties in oriented polypropylene(OPP) were studied over the electric field intensity between 10[MV/m] and 300[MV/m] at the range of temperature from $5[^{\circ}C]$ to $55[^{\circ}C]$ in this study. The range of electrical conduction properties observed at $15[^{\circ}C]$ were divided into five regions with increasing electric field intensity. Particularly, voltage-controlled negative resistance was shown in the region from 70[MV/m] to 82[MV/m].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.197-200
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• 2005

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8-hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting layer. We manufactured reference structure that has in $ITO/TPD/Alq_3/Al$. Buffer layer effects were compared to reference structure. And we have analyzed out electrical conduction mechanism in $ITO/Alq_3/Al$ device with various temperature.