• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.288-288
• /
• 2009

We have studied polarity effects of dielectric anisotropy effects on electro-optical characteristics of a twisted nematic mode driven by fringe electric field, which has wide viewing angle characteristics. Our device is designed as normally black mode between parallel polarizers. The perfect polarization conversion of incident light, which passes through a polarizer, is achieved, when it passes through the twisted liquid crystal (LC) layer. If an electric field is applied, the LC molecules with a positive (or negative) dielectric anisotropy rotate parallel (or perpendicular) to the horizontal component of a fringe electric field as increasing transmittance. From the calculated results, enhanced transmittance of the fringe field-twisted nematic (FF-TN) mode with positive dielectric anisotropy of + 8.2 can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.8
• /
• pp.720-725
• /
• 2002

The fringe-field switching (FFS) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using the liquid crystal (LC) with negative dielectric anisotropy. In the device, the LC director rotates almost in-plane. However, in the bright state the device shows bluish and yellowish color along parallel and perpendicular to the LC director at off-normal directions since the LC director rotates only in one direction. Such a problem was greatly improved using a wedge shape of only pixel electrodes. In this way two different field directions exist in a pixel, enabling the LC director to rotate in two opposite directions. Consequently, owing to dual domain effect when using the LC with negative dielectric anisotropy, the viewing angle characteristics are greatly improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.432-435
• /
• 2003

최근 초고압 케이블 절연체로 XLPE(가교 폴리에틸렌)이 널리 사용되어 지면서 XLPE의 여러 물리 화학적 특성에 따른 절연 성능에 관한 연구가 활발히 이루어지고 있다. 이러한 XLPE 절연층은 제조과정에서 압출과정을 거쳐 도체를 감싸게 되는데 이 과정에서 흐름 패턴으로 나타나는 비등방성(anisotropy)을 띠게된다. 본 논문에서는 초고압 XLPE 케이블에서 시계 방향으로 나타나는 비등방성(anisotropy)이 나타내는 기계-전기적 특성을 인장강도(tensile strength), 트리 개시전압 및 개시시간을 측정한 결과를 토대로 고찰해 보았으며, 이러한 비등방성이 초고압 XLPE 케이블의 절연 성능에 영향을 주는 인자로 고려되어야 함을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.9
• /
• pp.746-751
• /
• 1998

There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.535-538
• /
• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.6
• /
• pp.486-492
• /
• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.467-470
• /
• 2002

We report on an analog electro-optic effect in a nonchiral smectic C (NSC) liquid crystal (LC) mode with negative dielectric anisotropy in a transverse electrode configuration. Two-dimensional numerical simulations are executed to evaluate the display performances. The analog gray scales in the NSC LC mode are obtained in a dielectrically driving scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.423-426
• /
• 2001

Recently we have reported that the meander-patterned amorphous FeCoSiB films exhibit large change in their high frequency impedance by applying a strain, suggesting that the films are very attractive for making of a highly sensitive strain sensor elements. In this study, the effect of anisotropy on a change in the impedance of sputtered amorphous film patterns was investigated in the frequency range from 1MHz to 1GHz. As a function of applied strains, the high frequency impedance was extremely changed in the case of film patterns with transverse anisotropy due to excellent magnetomechanical coupling properties. As a summary, the maximum figure of merit f has measured about 2600 in the case of transverse anisotropy, and about 500 in the case of longitudinal anisotropy at 500 MHz. These values of F are approximately more than 1000 times higher than that of a conventional metal strain gauge (F 2) and more than 10 times higher than that of a semiconductor gauge (F 200).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.2
• /
• pp.144-150
• /
• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.133-136
• /
• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.