• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.339-339
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• 2007

Metal coating on ceramic powder has long been attracting interest for various applications such as superconductor where the brittle nature of high temperature ceramic superconductor was complemented by silver coating and metalloceramics where mechanical property improvement was achieved via electroless plating. More recently it has become of great interest in embedded passive device applications since metal coating on ceramic particles may result in the enhancement of the dielectric properties of ceramic-polymer composite capacitors. In our study, nickel ion-containing solution was used for coating commercial capacitor-grade $BaTiO_3$ powder. After filtering process, the powder was dried and heat-treated in 5% forming gas at $900^{\circ}C$. XRD and TEM were utilized for the observation of crystallization behavior and morphology of the particles. It was found that the nickel coating characteristics were strongly dependent on the several parameters and processing variables, such as starting $BaTiO_3$ particle size, nickel source, solution chemistry, coating temperature and time. In this paper, the effects of these variables on the coating characteristics will be presented in some detail.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.57-60
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• 2005

This paper describes the experimental results of the pre-breakdown phenomena in $SF_6/CO_2$ mixtures under non-uniform electric fields caused by positive and negative lightning negative voltages. $SF_6/CO_2$ mixtures have an advantage of an environmental aspect and cost reduction, and safety aspects. In order to analyze the pre-breakdown processes in $SF_6/CO_2$ mixtures stressed by impulse voltages, pre-breakdown current and luminous signals were measured by a shunt and a photo-multiplier tube, respectively. Dielectric strengthes of $SF_6/CO_2$ mixtures were investigated. Additionally, characteristics of discharge channels were observed by high speed cameras and the physical properties were discussed. The pre-breakdown propagates with a stepwise process. The in to breakdown from the corona onset point in positive polarity was shorter than that in negative polarity. The time intervals of positive leaders are shorter than those of negative leaders, and the path of positive leader channel is zigzag.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.873-877
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• 2007

In order to apply a complex multilayer chip LC filter, this study has estimated the interfacial reaction and coupling properties of dielectric materials $Pb(Fe_{1/2}Nb_{1/2})O_3$ and Ni-Zn-Cu ferrite materials through low-temperature co-sintering (LTCS). PFN powders were fabricated using double calcinated at $700^{\circ}C$ and then $850^{\circ}C$. While the perovskite phase rate was found to be 91 %, after heat treatment at $900^{\circ}C$ for 6h, the perovskite phase rate and density exhibited a value of 100 % and 7.46$g/cm^3$, respectively. The PFN/Ni-Zn-Cu ferrite, PFN/CUO (or $Pb_2Fe_2O_5$) and ferrite/CuO (or $Pb_2Fe_2O_5$) were mechanically coupled through interfacial reactions after the specimen was co-sintered at $900^{\circ}C$ for 6 h. No intermediate layer exists for the mutual coupling reaction. This result indicates the possibility of low-temperature co-sintering without any interfacial reaction layer for a multilayer chip LC filter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.118-123
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• 2010

The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.17-17
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• 2009

Piezoelectric single crystals in the ternary MPB PMN-PZ-PT system with high $T_cs$ ($T_c$ > $200\sim300^{\circ}C$) and $E_cs$($E_c$>5~10 kV/cm) were fabricated by the cost-effective solid-state crystal growth (SSCG) technique. Chemically uniform PMN-PZT single crystals were successfully grown up to 60 mm by the SSCG method and their dielectric and piezoelectric properties characterized. Compared to Bridgman PMN-PT single crystals, the high $T_c/E_c$ PMN-PZT single crystals were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus become best candidates for medical transducers, actuators, and naval applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.466-468
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• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.431-432
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• 2007

In this study, we used screen printing on the rear glass with silver electrodes, phosphor and a dielectric which is on the silver electrodes, and carried out firing in the temperature of $550^{\circ}C$, $570^{\circ}C$, $450^{\circ}C$ each. To seal the rear and top glass together, we used crystalline frit paste as a sealing material with dispenser and carried out firing up to $450^{\circ}C$. As using this panel, we focused on optimizing the condition which influences characteristics of discharging by the distance between electrodes, electrode structure, type and pressure of gases for FFL.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.163-167
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• 1999

LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.