• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.451-455
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• 2012

To compare an electrical and optical characteristics of indium tin oxide (ITO) and carbon nanotube (CNT) electrode on flexible and reflective display, we fabricate two charged particle-type display panels under the same panel condition of which the width of ribs is 10 ${\mu}m$, the cell size is $300{\mu}m{\times}300{\mu}m$, the q/m value of the white particles is -4.3 ${\mu}C/g$ and that for the black is +1.3 ${\mu}C/g$, and the cell gap is 75 ${\mu}m$, 125 ${\mu}m$, and 175 ${\mu}m$. We use plastic substrates coated with ITO and CNT electrode. To evaluate optical property, we measure a response time of particles using a laser and a photodiode. Threshold and driving voltages of CNT electrode according to the sheet resistance of 300, 600, 1,000 (ohm/sq) are compared with ITO electrode of 10 (ohm/sq). A response time of the CNT panel is similar to that of ITO panel, but the threshold and driving voltages of CNT panel are higher than that of ITO panel, inducing a large bombardment of the particles and shortening the lifetime of the panel. High difference of a threshold and a driving voltage of CNT panel will induce an particle clumping, resulting degradation of the panel. A bending radius of the fabricated CNT panel is 18 ${\mu}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.118-120
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• 2001

The $0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ ceramics were prepared by conventional mixed oxide method. The structural properties of $0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ ceramics with sintering temperature were investigated by the XRD and SEM. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $0.96MgTiO_3-0.04SrTiO_3$ ceramics. The second phase of $Sr_{0.5}LaTi_2O_6$ was shown with addition of the $La_2O_3$. The dielectric constant(${\varepsilon}_r$), $Q{\times}f$ value and the temperature coefficient of the $0.96MgTiO_3-0.04SrTiO_3+0.2La$ ceramics were 21. 41, 39991, $-3.3ppm/^{\circ}C$, respectively.

• 전력전자학회논문지
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• 제21권5호
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• pp.411-417
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• 2016

Theoretical IPMSM control technique is complicated, and reliability is low because of the changing parameters. Further, in case of general look-up table designing method which obtains torque characteristics (according to current and speed) or torque characteristics (according to magnetic flux through the entire control region), obtaining a precise result can be difficult and has the disadvantage taking too much time to establish a current look-up table. In this paper, the new auto maximum torque point tracking (MTPT) algorithm that automatically finds the optimum stator d - q axis electric current reference through the entire speed region is devised; consequently, it could establish a 3D look-up table with torque characteristics according to current and speed. In case of using the devised auto MTPT algorithm, the result value detailed was obtained in comparison with the generalized look-up design technique, and checked to reduce the current look-up table establishment time.

• 전자공학회논문지D
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• 제35D권8호
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• pp.8-14
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• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.778_779
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• 2009

The maximum output torque developed by the machine is dependent on the allowable current rating and maximum voltage that the inverter can supply to the machine. Therefore, to use the inverter capacity fully, it is desirable to use the control scheme considering the voltage and current limit condition, which can yield the maximum torque per ampere over the entire speed range. The paper is proposed maximum torque control of induction motor drive using adaptive learning neuro fuzzy controller and artificial neural network(ANN). The control method is applicable over the entire speed range and considered the limits of the inverter's current and voltage rated value. For each control mode, a condition that determines the optimal d, q axis current $_i_{ds}$, $i_{qs}$ for maximum torque operation is derived. The proposed control algorithm is applied to induction motor drive system controlled adaptive learning neuro fuzzy controller and ANN controller, the operating characteristics controlled by maximum torque control are examined in detail. Also, this paper is proposed the analysis results to verify the effectiveness of the adaptive learning neuro fuzzy controller and ANN controller.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 A
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• pp.265-268
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• 2000

In this study, a small punch creep (SP-Creep) test using miniaturized specimen has been described for the development of the new creep test method for high temperature structural components such as headers and tubes of boiler, turbine casing and rotor, and reactor vessel. The SP-Creep testing technique has been applied to 1Cr-0.5Mo steel used widely as boiler header material and the creep test temperature are varied at $550^{\circ}C{\sim}600^{\circ}C$. From the experimental results, e.g. SP-Creep curve behaviors, the creep rate in steady state and creep rupture life with test temperature and load, the load exponential value(n, m), the activation energy($Q_{spc}$), the Monkman-Grant relation and the creep life assessment equation etc., it can be summarized that the SP-Creep test may be a useful test method to evaluate the creep properties of the heat resisting material such as boiler header.

• 한국인터넷방송통신학회논문지
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• 제21권3호
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• pp.175-181
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• 2021

본 논문은 단기 에너지 사용량 예측을 위해 인공지능 기반의 접근법에 대해 분석한다. 본 논문에서는 단기 에너지 사용량 예측 기술에 자주 활용되는 지도학습 알고리즘의 한계를 개선하기 위해 강화학습 알고리즘을 활용한다. 지도학습 알고리즘 기반의 접근법은 충분한 성능을 위해 에너지 사용량 데이터뿐만 아니라 contextual information이 필요하여 높은 복잡성을 가진다. 데이터와 학습모델의 복잡성을 개선하기 위해 다중 에이전트 기반의 심층 강화학습 알고리즘을 제안하여 에너지 사용량 데이터로만 에너지 사용량을 예측한다. 공개된 에너지 사용량 데이터를 통해 시뮬레이션을 진행하여 제안한 에너지 사용량 예측 기법의 성능을 확인한다. 제안한 기법은 이상점의 특징을 가지는 데이터를 제외하고 실제값과 유사한 값을 예측하는 것을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• 한국전자파학회논문지
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• 제30권3호
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• pp.202-208
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• 2019

본 논문에서는 일차원 배열과 이차원 배열일 때 프린티드 다이폴의 스캔 블라인드니스 특성을 분석한다. 먼저 시뮬레이션을 이용하여 일차원과 이차원 배열일 때 프린티드 다이폴안테나의 능동소자패턴을 구한다. 이차원 배열에서는 E-면 방향으로 스캔 블라인드니스가 ${\pm}36^{\circ}$ 부근에서 발생하였으나, 일차원 배열에서는 스캔 블라인드현상이 거의 관측되지 않았다. 이차원 스캔 블라인드니스 원인을 분석하기 위해 먼저 이차원 배열의 단위 셀 분산 특성을 구하고, 주파수에 따른 스캔 블라인드니스와 비교한다. 그리고 일차원 배열과 이차원 배열에서의 단위 셀에서 Q 값을 비교함으로써 일차원과 이차원 배열에서 스캔 블라인드현상 차이를 설명한다. 선형으로 배열된 다이폴 구조에서 두 포트 사이에 아홉 개의 소자가 떨어져 있을 때 E-면 방향으로 전기장의 커플링을 시뮬레이션을 통하여 관측함으로써 이론의 타당성을 보인다. 마지막으로 프린티드 다이폴 배열을 제작하고, $11{\times}1$ 부배열과 $11{\times}3$ 부배열에 대해 능동소자패턴을 각각 측정하여, 시뮬레이션 결과와 비교함으로 이론을 검증한다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.283-288
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• 2000

In this work, small-size, high-performance simple solenoid-type RF chip inductors utilizing an Al2O3 core material were investigated. Copper (Cu) wire with $40\mum$ diameter was used as the coils and the size of the chip inductor fabricated in this work was $2.1mm\times1.5mm\times1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on each end of backsides of a core material. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. The developed inductors have the self-resonant frequency (SRF) of 1.1 to 3.1 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.