• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.103-104
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• 2006

Transparent conductive oxide (TCO) are necessary as front electrode for increased efficiency of LED. In our paper, transparent conducting alminum-doped Zinc oxide films (AZO) were prepared by rf magnetron sputtering on glass (corning 1737) substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The smooth AZO films were etched in diluted HCL (0.5%) to examine the surface morphology properties as a variation of the time. The surface morphology of AZO films increased as a time. We observed texture structure of AZO thin film etched for 1min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.510-513
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• 2004

This paper represents the response surface model for the cell gap on the flexible liquid crystal display (LCD) process. Using response surface methodology (RSM). D-optimal design is carried out to build the design space and the cell gap is characterized by the quadratic model. The statistical analysis is used to verify the response surface model. This modeling technique can predict the characteristics of the desired response, cell gap, varying with process conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.356-364
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• 2015

The transmission performance of TSV considering the effect of electronic-thermal coupling is an new challenge in three dimension integrated circuit. This paper presents the thermal equivalent circuit (TEC) model of the TSV, and discussed the thermal equivalent parameters for TSV. Si layer is equivalent to transmission line according to its thermal characteristic. Thermal transient response (TTR) of TSV considering electronic-thermal coupling effects are proposed, iteration flow electronic-thermal coupling for TSV is analyzed. Furthermore, the influences of TTR are investigated with the non-coupling and considering coupling for TSV. Finally, the relationship among temperature, thickness of $SiO_2$, radius of via and frequency of excitation source are addressed, which are verified by the simulation.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.21-25
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• 2006

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.3
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• pp.248-252
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• 2005

This paper deals with a new design method for a small-size rotating machine with high power. In order to achieve high performance, secondary excitation by Nd-Fe-B magnets and the grain oriented electrical steel sheets were selected and a new design using dual rotors is proposed. The outline of the high-performance rotating machine will be presented and the results of the finite element analysis by using this method combined with the E&SS modeling will be shown in the paper.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.236-236
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.234-234
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• 2003

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.526-526
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• 2006

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.593-593
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1344-1347
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• 2007

We have fabricated bottom gate TFTs with active layers of amorphous/microcrystalline Si double layers (DL). Dynamic electric stresses were applied to DL TFTs and a-Si TFTs to compare their degradation characteristics. The DL TFTs were more stable under dynamic stresses than a-Si TFTs.