• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.353-354
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• 2006

This work describes the effect of binders, such as carboxymethylcellulose (CMC), CMC+Polytetrafluoroethylene (PTFE) and PTFE, on the electrochemical and mechanical properties of activated carbon-electrode for electric double layer capacitor. The cell capacitors using the electrode bound with binary binder composed of CMC and PTFE, especially m composition CMC ; PTFE = 60 : 40 wt %, has exhibited the better rate capability and the lower internal resistance than those of the cell capacitor with CMC. On the other hand, the sheet type electrode kneaded with PTFE was bonded with conductive adhesive on Al foil. This cell capacitor using the electrode with PTFE exhibited the best mechanical properties and rate capability compared to the CMC and CMC+PTFE one These behaviors could be explained by the well-developed network structure of PTFE fibrils during the kneading process.

• 한국재료학회지
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• 제29권12호
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• pp.757-763
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• 2019

A stacked high-voltage (900 V) Al electrolytic capacitor made with ZrO₂ coated anode foils, which has not been studied so far, is realized and the effects of Zr-Al-O composite layer on the electric properties are discussed. Etched Al foils coated with ZrO₂ sol are anodized in 2-methyl-1,3-propanediol (MPD)-boric acid electrolyte. The anodized Al foils are assembled with stacked structure to prepare the capacitor. The capacitance and dissipation factor of the capacitor with ZrO₂ coated anode foils increase by 41 % and decrease by 50 %, respectively, in comparison with those of Al anode foils. Zr-Al-O composite dielectric layer is formed between separate crystalline ZrO₂ with high dielectric constant and amorphous Al₂O₃ with high ionic resistivity. This work suggests that the formation of a composite layer by coating valve metal oxide on etched Al foil surface and anodizing it in MPD-boric acid electrolyte is a promising approach for high voltage and volume efficiency of capacitors.

• 한국세라믹학회지
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• 제52권1호
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• 한국지반공학회논문집
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• 제19권5호
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• pp.319-326
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• 2003

터널 설계를 위한 조사에 있어서, 요사이 시추공 조사는 물론 탄성파 탐사, 전기 비저항 탐사 등의 물리탐사가 빈번히 행해지고 있는 실정이다. 따라서 암반 등급 등에 의한 최적의 지반평가를 위해 조사에서 얻어지는 모든 자료를 체계적으로 최대한 활용할 수 있는 방법이 절실히 요구되고 있다. 많은 연구자들이 정량적 데이터가 부족한 경우에 대처하기 위해 정성적 데이터의 이용을 제안해 왔다. 본 연구에서는 시추가 되지 않은 구간의 암반등급을 추정하는 방법이 지구통계학 이론 중의 하나인 다분적 지시크리깅 기법에 기초하여 제안되었다. 실제 터널 설계에 있어서, 불확실성이 다른 두 종류의 자료, 예를 들어 시추공 자료와 물리탐사자료 등이 암반등급 산정에 동시에 활용될 수 있음이 제시되었다.

• 전기의세계
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• 제22권4호
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• pp.30-34
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• 1973

The main purporse of this paper is to study on the influence of temperature effect on electrical-properties, i.e., dielectric breakdown voltage, dielectric constant and resitivity of homemade insulating oil containing antioxidant. Transformer oil manufactured in Korea is taken for a sample, and this sample is classified into seven samples in which antioxidant is contained and not contained, and antioxidant is divided into three kinds of amount: 0.3%, 0.5%, 0.8%. Changing the tempe5rature of the samples by oil bath, the electric properties measured from the samples are as follows: (1) the variation of either the dielectric breakdown voltage or the resistivity are considerably large, but the dielectric constants are almost unchanging. (2) In view of electrical characteristic, the deterioration rate of the samples containing antioxidant is somewhat lower than that of other samples. (3) Nearly the same value is shown in the dielectric-breakdown voltage of the samples, in which contained the different amount of antioxidant: 0.3%, 0.5%, 0.8%, but the decrease rate of resitivity is lowest, 0.3%, of all. As the result of the experiment, This study can suggest that 0.3% be the optimum amount of antioxidant which will be added transformer oil manufactured in Korea and is useful for the understanding about the electrical properties of transformer oil containing antioxidant.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1248-1253
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• 2004

This work describes the effect of electrode binder on the characteristics of electric double layer capacitor Among carboxymethylcellulose (CMC), Polyvinylpyrrolidone (PVP), Polyvinyl Alcohol (PVA), and Polyvinylidene Fluoride (PVDF), the unit cell using CMC showed good rate capability between $2.5mA/cm^2{\sim}100mA/cm^2$ current density. However, CMC as a binder is incongruent, because the electrode bound with CMC is rigid and easy to crack during a press and winding process for fabrication of capacitor. The unit cell capacitor using the electrode bound with binary binder composed of CMC and Polytetrafluoroethylene (PTFE), especially in composition CMC : PTFE : 60 : 40 wt.%, has exhibited the better mechanical properties than those of the unit cell with CMC. On the other hand, it was also noted that the mechanical properties of CMC+PTFE electrode, coated on underlayer composed of CMC and carbon black, were much improved the binding force.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.