• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
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• pp.177-180
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• 2006

This study is to make a basic study if solid zinc (Zn) can be used for buried reference electrode, so we examined the adequacy of zinc as reference electrode by using zinc which showed regular electrode for buried period. The deference of electric potential if zinc electrode for corrosion factor such as soil resistivity or pH didn't show fixed trend and there was no clear trend on the change of measurement period. From field test, it is known that the natural electric potential difference of CSE electrode and zinc electrode is 1,100mV, but the electric potential of zinc electrode for CSE electrode in the natural soil and copying soil was 1,094~1,158mV. There was no fixed trend on the change of measurement period and electric potential difference of zinc electrode for corrosion factors such as soil resistivity or pH. Consequently, there was 40~60mV of electric potential difference in every copying soil during the experiment measurement.

• 지구물리와물리탐사
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• 제13권1호
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• pp.69-79
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• 2010

저수지의 누수를 막기 위하여 저수지 가에 시추공을 뚫어 대량의 시멘트 현탁액(그라우트)을 주입한 후, 이 시멘트 현탁액이 저수지 하부로 얼마나 침투 했는가를 파악하기 위한 모니터링이 수행되었다. 암석 코아 시료 실험을 통하여 사용된 시멘트 현탁액의 전기비저항은 이 지역의 지하수의 전기비저항에 비해 월등히 작다는 것을 알아내었다. 따라서 시멘트 현탁액으로 그라우팅 판 부분은 전기비저항이 현저히 감소할 것으로 예상되며 지구물리학적인 탐사 방법들이 이 저수지의 울 저류 성능의 개선 효과를 평가하는데 적합할 것이라고 기대된다. 그라우팅을 하는 동안 총 7측선의 전기비저항탐사와 두 측선의 인공 송신원 AMT (CSAMT)탐사가 저수지 안의 측선을 따라 시멘트 현탁액의 침투 현황을 모니터링 하기 위해 수행되었다. 전기비저항 자료의 2차원 역산결과 $10\;{\Omega}m$ 또는 그 이하의 극히 낮은 비저항값을 갖는 영역이 관측되었다. 이 영역은 시멘트 현탁액으로 채워진 파쇄대로 추정된다. 비저항값의 변화율을 보여주는 단면들을 살펴본 결과 그라우팅 과정이 진행됨에 따라 비저항의 차이를 보이는 부분이 점차적으로 심부로 확장되어가는 세 곳을 확인할 수 있었다. 이 위치들은 그라우팅 시추공에서 수행된 Lugeon시험에서 높은 투수생을 나타낸 곳과 일치하는 결과를 보였다. 이 연구를 통하여 우리는 저수지위에서 실시완 전기비저항과 CSAMT탐사를 통하여 전기비저항의 변화를 측정할 수 있다는 것을 확인하였다. 또한 이러한 모니터링 자료는 향후 그라우팅 계획에 반영될 수 있을 것이다.

• 지질공학
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• 제21권2호
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• pp.117-124
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• 2011

해안 매립 연약지반상에 도로나 제방을 성토한 경우 연약지반 속에서는 침하, 융기, 측방유동 등의 지반변형이 빈번하게 발생한다. 연약지반의 지반변형 거동을 지상에서 원지반을 훼손하지 않고 조사하기 위하여 전기비저항탐사법을 적용하여 보았다. 본 연구에서 해안지역의 점토질 퇴적층이 주로 분포하는 서해안 시화지구의 매립지역에서 실험성토를 실시하였다. 실험성토후, 성토하중에 의한 연약지반의 변형 영향범위를 확인하기 위하여 전기비저항탐사법을 실시한 결과, 수평방향으로는 성토 지역에서 남측으로 약 5 m 범위, 수직 방향으로는 지표해 약 5~6m로서 성토 높이의 약 1.0~1.2배 심도까지 높은 전기비저항으로 성토의 영향을 받는 것으로 나타났다. 본 연구결과 성토에 의한 연약지반의 변형을 해석하는데 전기비저항탐사 방법을 적용이 가능한 것을 확인하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.371-374
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• 2007

A method for metal nano powder imprinting is proposed as a patterning process for conductive tracks that is inexpensive and scalable down to the nanoscale. Conductive tracks with line widths of $0.5{\sim}20{\mu}m$ were fabricated using this method. The processing conditions were optimized to avoid various types of defects, and to increase the degree of sintering and electric conductivity of the imprinted conductive tracks. The mean electric resistivity of the conductive tracks imprinted under optimum conditions was $8.95{\mu}{\Omega}{\cdot}cm$, which is in the range required for practical applications.

• 한국결정성장학회지
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• 제9권6호
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Geomechanics and Engineering
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• 제18권5호
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• pp.527-534
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• 2019

Although ground investigation had carried out prior to the construction, many problems have arisen during the civil-engineering works because of the presence of the unexpected underground utility lines or anomalies. In this study, a new geophysical exploration method was developed to solve those problems by improving and supplementing the existing methods. This new method was based on the difference of electrical resistance values between anomalies and surrounding ground medium. A theoretical expression was suggested to define the characteristics of the anomalies such as location, size and direction, by applying the electric field analysis. An inverse analysis algorithm was also developed to solve the theoretical expression using the measured electrical resistance values which were generated by the voltage flowing the subsurface medium. To verify the developed method, field applications were conducted at the sites under construction or planned. From the results of the field tests, it was found that not only the new method was more predictive than the existing methods, but its results were good agreed with the measured ones. Therefore, it is expected that application of the new exploration method reduces the unexpected accidents caused by the underground uncertainties during the underground construction works.

• 조명전기설비학회논문지
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• 제17권5호
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• pp.103-110
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• 2003

대지 저항률이 높은 암반, 사력층 지역에서의 접지 저항은 일반적인 봉형 접지 전극으로는 얻기가 거의 불가능 하며 원하는 저항값을 얻기 위해서는 깊이 매설한 접지 전극과 접지 저항 저감제를 충분하게 사용하는 코어링 접지 방식을 채택하여 시설하는 것이 적절하다고 판단된다. 본 연구는 둥가반경 개념을 이용하여 코어링 접지 전극의 반 경이 확장되는 것을 보였으며 이릎 토대로 낮은 접지 저항이 얻어지고, 제주지역과 같이 고저항 지대에서의 각 토 양의 대지 저항률을 추정함으로써 다른 고저항 지대에서의 접지공사시 개략적인 접지저항을 예측하여 기초 자료로 사용할 수 있도록 하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.236-237
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• 2006

We have investigated volume resistivity showed by changing the content of Carbon nanotube and carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the six of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both $23{\pm}1[^{\circ}C]$ and $90{\pm}1[^{\circ}C]$. The volume resistivity decreased by adding Carbon nanotube and carbon black. Also the volume resistivity had different properties because of PTC/NTC tendencies at between $23[^{\circ}C]$ and $90[^{\circ}C]$. We experimented with electric properties of semiconducting components with fewer Carbon nanotube than carbon black.