• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.24-25
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• 2006

In this paper, ZnO thin films were prepared on p-Si(100) by RF magnetron sputtering. Before the depostion, the substrates were pre-heated to 500, 400, 300, $200^{\circ}C$ or not. During the deposition, the substrates were cooled down naturally or kept and then the films were investigated by XRD(X-ray diffraction) and SEM (scanning micro scope). It is showed the most outstanding result that the film was prepared on the substrate were cooled from $400^{\circ}C$. When the substrate was cooled from a certain temperature during deposition, it could be improve the c-axis orientation and useful for application of SAW(surface acoustic wave) filter and FBAR(film bulk acoustic wave resonator) device.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.77-81
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• 2020

Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.212-217
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• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Nuclear Engineering and Technology
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• v.34 no.1
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• pp.9-21
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• 2002

Recently each domestic NPP has achieved zero release in liquid effluent activity. However, when looking back past experiences in world nuclear power operation, it is thought that another maximum activity reduction in the released liquid effluent just prior to falling it into environment, if possible, will bring a good effect in PA viewpoint. As the intent of applying the safety concept of diversity to conducting the above activity reduction measure, a scheme passing that effluent through the Deposition Bed just before discharging it into ocean environment was divised. Both Zeolite and ＂the mixed ＂Anthracite-sand＂ were derived as the main activity adsorption medium used in the Deposition Bed, and the schematic drawings of this Bed were presented.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.63-66
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• 2003

The electrophoretic deposition method has the advantage of relatively few fabrication facilities and simple process procedure as well as the economical and technical merit of allowing various forms of deposition and easy control of deposition thickness and wire length. A study, especially electric field and additive, on the optimization method to increase the density of particles and uniformity of their orientation have been performed to overcome the cracking and the porosity problems in the fabricated superconductor.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.5
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• pp.424-432
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• 2002

Numerical analysis has been conducted to characterize deposition rates of aerosol particles onto a heated, rotating disk with electrostatic effect under the laminar flow field. The particle transport mechanisms considered were convection, Brownian diffusion, gravitational settling, thermophoresis and electrophoresis. The aerosol particles were assumed to have a Boltzmann charge distribution. The electric potential distribution needed to calculate local electric fields around the disk was calculated from the Laplace equation. The Coulomb, the image, the dielectrophoretic and the dipole-dipole forces acting on a charged particle near the conducting rotating disk were included in the analysis. The averaged particle deposition vetocities and their radial distributions on the upper surface of the disk were calculated from the particle concentration equation in a Eulerian frame of reference, along with a rotation speed of 0∼1,000rpm, a temperature difference of 0∼5K and a charged disk voltage of 0∼1000V.Finally, an approximate deposition velocity model for the rotating disk was suggested. The present numerical results showed relatively good agreement with the results of the present approximate model and the available experimental data.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.43-50
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• 1998

Transparent and conducting tin oxide films were prepared on Pyrex glass substrates by the remote plasma chemical vapor deposition (RPCVD). The main control variables of the RPCVD process included the deposition time, the flow rates of tetramethyltin, oxygen and argon, the radio-frequency power, and the substrate temperature. Dependence of the deposition rate, electric resistivity, optical transmittance and crystal structure on these parameters was systematically examined to prepare high qualities of tin oxide films and to better understand RPCVD process. The effect of those parameters on the properties of tin oxide films in complicatedly related on another. A tin oxide film parameters on the protimized deposition conditions exhibited deposition rate of 102 $\AA$/min, electric resistivity of $9.7\times 10^{-3}\Omega$cm and visible transmittance of ~80%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.139-142
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• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.