• 제목/요약/키워드: electric deposition

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(Bi,Nd)(Fe,Ti)$O_3$ 다강체 세라믹 및 박막의 상변화 거동 (Phase Evolution Behavior of Multiferroic (Bi,Nd)(Fe,Ti)$O_3$ Ceramics and Thin Films)

  • 김경만;양판;이재열;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.231-232
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    • 2008
  • The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

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나노기술을 위한 DMPC 유기박막의 유전완화특성 (Dielectric Relaxation Properties of DMPC Organic Thin Films for Nanotechnology)

  • 최영일;조수영
    • 전자공학회논문지 IE
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    • 제49권1호
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    • pp.7-11
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    • 2012
  • 본 논문에서는 인지질 단분자인 DMPC 유기초박막에 압력 자극을 이용하여 표면압과 변위전류의 검출에 따른 유전 완화현상에 대한 물리적 특성 평가를 하였다. 유기초박막에서 약간의 유전 완화 시간이 소요되었는데 이는 분자 영역에 의존한다는 사실을 알 수 있었다. 또한, 유기박막의 누적 조건에 의해 제작된 MIM 소자에 전압을 인가시, LB막의 누적층수가 증가 할수록 저항이 증가한다는 것을 알 수 있었는데 이는 유기초박막의 층수가 증가하여 전극간의 거리가 멀어질수록 더 높은 전계에서도 파괴되지 않는 절연특성이 나타남을 알 수 있었으며 나노단위의 유기초박막의 비교적 양호한 절연성을 확인, 제시 하였다.

In-situ magnetization measurements and ex-situ morphological analysis of electrodeposited cobalt onto chemical vapor deposition graphene/SiO2/Si

  • Franco, Vinicius C. De;Castro, Gustavo M.B.;Corredor, Jeaneth;Mendes, Daniel;Schmidt, Joao E.
    • Carbon letters
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    • 제21권
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    • pp.16-22
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    • 2017
  • Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향 (Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method)

  • 이은숙;박종극;이욱성;성태연;백영준
    • 한국세라믹학회지
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    • 제49권6호
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    • pp.620-624
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    • 2012
  • The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

A Case Study of Risk Assessment of Ozone Impact on Forest Tree Species in Japan

  • Watanabe, Makoto;Yamaguchi, Masahiro;Matsumura, Hideyuki;Kohno, Yoshihisa;Koike, Takayoshi;Izuta, Takeshi
    • Asian Journal of Atmospheric Environment
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    • 제5권4호
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    • pp.205-215
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    • 2011
  • Ozone ($O_3$) is a main component of photochemical oxidants and a phytotoxic air pollutant. Although the current levels of tropospheric $O_3$ in East Asia could adversely affect productivity of forest tree species, risk assessments of $O_3$ impact were limited. In this paper, we summarize the methodology of risk assessment of $O_3$ on forest tree species based on our two previous studies, risk assessments of $O_3$ impact on the growth of Fagus crenata by Watanabe et al. (2012) and on the annual carbon absorption of three representative conifers, Cryptomeria japonica, Pinus densiflora and Larix kaempferi by Watanabe et al. (2010). $O_3$ sensitivity of each tree species obtained from an experimental study, $O_3$ exposure and atmospheric N deposition based on field monitoring and vegetation survey were integrated by geographic information system method. Based on the results, we conclude that the area with high risk of $O_3$ impact does not necessarily correspond to the area with high $O_3$ exposure. The varieties of tree habitat, tree sensitivity to $O_3$ and annual carbon absorption among the tree species, and N deposition-induced change in the $O_3$ sensitivity of F. crenata are raised as the factors of discordance between areas with high risk and those with high $O_3$ exposure. In the last part of this paper, we discuss the present uncertainty and perspectives of risk assessment for the future studies on the impact of $O_3$ on forest tree species in East Asia.

LPCVD 방법에 의한 저온 $SiO_2$ 박막의 증착방법과 DRAM 커패시터에서의 그 신뢰성 연구 (Novel Low-Temperature Deposition of the $SiO_2$ Thin Film using the LPCVD Method and Evaluation of Its Reliability in the DRAM Capacitors)

  • 안성준;박철근;안승준
    • 한국산학기술학회논문지
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    • 제7권3호
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    • pp.344-349
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    • 2006
  • [ $60{\sim}70nm$ ] 급의 design rule을 가진 고집적 반도체 소자를 제작하려면, 트랜지스터 형성 이후의 공정에서 thermal budget을 줄이기 위하여 공정의 온도를 낮추는 것이 중요하다. 본 연구에서는 고온의 습식 산화막을 대체할 수 있는 저온의 LPCVD (Low-Pressure Chemical Vapor Deposition) $SiO_2$(LTO : Low-Temperature Oxide) 박막 증착공정을 제시하였으며, ONO (Oxide/Nitride/Oxide) 구조의 커패시터를 형성하여 증착된 LTO 박막의 전기적인 신뢰성을 평가하였다. LTO 박막은 5 MV/cm 이하의 전기장 영역에서는 고온의 습식 산화막과 크게 차이가 없는 누설전류 특성을 보였으나, 더 높은 전기장의 영역에서는 훨씬 더 우수함을 보여주었다.

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Atmosphere-forest Exchange of Ammoniacal Nitrogen in a Subalpine Deciduous Forest in Central Japan during a Summer Week

  • Hayashi, Kentaro;Matsuda, Kazuhide;Takahashi, Akira;Nakaya, Ko
    • Asian Journal of Atmospheric Environment
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    • 제5권2호
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    • pp.134-143
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    • 2011
  • The present study aimed to investigate the diurnal variations in air concentrations and exchange fluxes of ammoniacal nitrogen ($NH_x$: ammonia ($NH_3$) and particulate ammonium) in a subalpine deciduous forest in central Japan during a week in summer. The $NH_3$ concentrations ($0.50\;{\mu}g\;N\;m^{-3}$ on average) showed a clear circadian variation, i.e., high and low in the daytime and nighttime, respectively. The concentration of particulate ammonium in the coarse fractions was extremely low, whereas that for the PM2.5 fraction was relatively high $0.55\;{\mu}g\;N\;m^{-3}$ on average). The main inorganic ion components of PM2.5 at the study site were ammonium and sulfate. The exchange fluxes of $NH_x$ were bidirectional. Both the maximum and minimum values occurred in the daytime, i.e., $0.39\;mg\;N\;m^{-2}\;hr^{-1}$ of downward flux and $0.11\;mg\;N\;m^{-2}\;hr^{-1}$ of upward flux for $NH_3$ and $0.25\;mg\;N\;m^{-2}\;hr^{-1}$ of downward flux and $0.13\;mg\;N\;m^{-2}\;hr^{-1}$ of upward flux for PM2.5 ammonium. The exchange fluxes of $NH_x$ at night could be considered as zero. The mean deposition velocity during the research period was almost zero for both $NH_3$ and PM2.5 ammonium. The atmosphere-forest exchange of $NH_x$ in the forest during the study period was balanced. The remarkably large deposition of $NH_x$ was attributable to meteorological events such as showers the night before that thoroughly washed the forest canopy and subsequent clear skies in the morning, which enhanced convection. The cleaning effect of rainfall and the rapid change in convection in the early morning should be monitored to evaluate and generalize the gas and particle exchange in a forest.

염료 감응형 태양전지에서 Mesoproso $TiO_2$/FTO 사이에 완충층으로써의 PLD로 증착한 $TiO_2$ 박막에 관한 연구 (A Study on $TiO_2$ Thin Film by PLD for Buffer Layer between Mesoproso $TiO_2$ and FTO of Dye-sensitized Solar Cell)

  • 송상우;김성수;노지형;이경주;문병무;김현주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.424-424
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    • 2008
  • Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

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진공증착법을 이용한 유기 박막의 전기적 특성에 관한 연구 (A Study on the Electrical Characteristic of Organic Thin Film by Physical Vapor Deposition Method)

  • 박수홍
    • 전기학회논문지P
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    • 제57권2호
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    • pp.140-145
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    • 2008
  • The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.

표면 전기 특성 측정을 위한 MOS 트랜지스터 탐침 개발 (MOS transistor probe for surface electric properties)

  • 이상훈;서재완;임근배;신현정;문원규
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1963-1966
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    • 2008
  • We fabricate and evaluate the metal-oxide-semiconductor (MOS) transistor probe with the focused-ionbeam (FIB) for surface electric properties. The probes are designed with the rectangular and V-shaped structures, and their dimensions are determined considering the contact mode operation. The conductive nano tip is grown with FIB system, and deposition condition is controlled for the sharp tip. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions, and the results show the well defined measurement patterns.

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