• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• Journal of Korea Foundry Society
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• v.13 no.5
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• pp.476-483
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• 1993

The influence of substrate materials on the degree of basal porosity during spray casting process has been investigated. Different conditions of droplet spreading on the substrate were induced by varying the substrate material. Flat sections of cast iron and aluminum have been spray deposited via spray casting process onto an aluminum substrate, a low carbon steel substrate, and an alumina based refractory substrate. Results for cast iron and aluminum sprayed onto the aluminum substrate showed significant improvements in the surface condition and degree of basal porosity with evidence of substrate deformation that round pits ranging from $5{\mu}m$ to $20{\mu}m$ in diameter are distributed on the surface of aluminum substrate. The lowest level of porosity was developed in alumina based refractory material. Several mechanisms for porosity formation were discussed with droplet impact pressure and droplet spreading. Adopting a spray cutting mechanism for removing the periphery of spray cone, porosity level was remarkably decreased.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.33-38
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• 2013

In this study, both a finite element analysis and an experimental analysis are executed to investigate the mechanical characteristics of dielectric material effects on warpage. Also, viscoelastic material properties are measured by DMA and are considered in warpage simulation. A finite element analysis is done by using both thermal elastic analysis and a thermo-viscoelastic analysis to predict the nonlinear effects. For experimental study, specimens warpage of non-symmetric structure with body size of $22.5{\times}22.5$ mm, $37.5{\times}37.5$ mm and $42.5{\times}42.5$ mm are measured under the reflow temperature condition. From the analysis results, experimental warpage is not similar to FEA results using thermal elastic analysis but similar to FEA results using thermo-viscoelastic analysis. Also, its effect on substrate warpage is increased as core thickness is decreased and body size is getting larger. These FEA and the experimental results show that the nonlinear characteristics of dielectric material play an important role on substrate warpage. Therefore, it is strongly recommended that non-linear behavior characteristics of a dielectric material should be considered to control warpage of FCBGA substrate under conditions of geometry, structure and manufacturing process and so on.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.10
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• pp.1480-1488
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• 2003

Synthesis of carbon nanomaterials on a substrate coated with metal nitrates using an ethylene fueled inverse diffusion flame was illustrated. The effects of radial distance, residence time of the substrate, and hydrocarbon composition on the synthesis of carbon nanomaterials were investigated. The effects of catalyst metal particles were also studied using SUS304 substrates coated with Fe(NO$_3$)$_3$ (ferric nitrate, nonahydrate) and Ni(NO$_3$)$_2$(nickel nitrate, hexahydrate), and Cu substrate. Carbon nanomaterials, with diameters ranging from 30 - 70 nm, were observed on the substrate for both cases of using substrates only and using them with metal nitrates. In case of using the substrate with metal nitrates, the formation and growth of carbon nanomaterials were occurred in the lower temperature region than that of using the substrates only due to the easy activation of the metal particles coated on the surface of the substrates.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.1
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• pp.19-29
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• 1991

This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

• Journal of Microbiology and Biotechnology
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• v.1 no.3
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• pp.182-187
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• 1991

The effects of acrylonitrile and acrylamide on the enzyme action of nitrile hydratase of Brevibacterium sp. CH1 and CH2 strains used for the biotransformations of nitriles were studied. The excessive substrate (acrylonitrile) and product (acrylamide) inhibited the enzyme activity competitively. In comparison with 0.2 mol/l of CH1 strain, the substrate inhibition of CH2 strain began to appear only at a high acrylonitrile concentration of 0.91 mol/l. In a packed bed reactor, dispersed plug flow model was proposed and this model was proved to be valid by the experiment. Also acrylamide productivity decreased sharply when acrylamide concentration in the substrate solution exceeded 20％ (wt/v).

• Asian-Australasian Journal of Animal Sciences
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• v.17 no.5
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• pp.643-647
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• 2004

An in vitro experiment was carried out to investigate effects of solid associated (SAB) and liquid associated bacteria (LAB) and the type of incubation substrate on ruminal fermentation and gas production profiles. Bacterial fraction did not influence total numbers of bacteria. Gas production degradation parameters were significantly influenced by bacterial fraction and type of substrate (p<0.05). There was significant interaction between bacterial fraction and type of substrate in gas production (p<0.01). Total VFA concentration and acetic and propionic acid ratio were also influenced by bacterial fraction and type of substrate with little differences in individual VFA concentration.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.225-235
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• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.