• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Steel and Composite Structures
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• 제5권5호
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• pp.407-420
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• 2005

This study presents the strength of braced and unbraced cold-formed steel wall frames consisting of several wall studs acting as columns, top and bottom tracks, and bracing members. The strength and the buckling mode of steel wall frames were found to be different due to the change of bracing type. In addition, the spacing of wall studs is a crucial factor to the strength of steel wall frames. The comparisons were made between the test results and the predictions computed based on AISI Code. The related specifications do not clearly provides the effective length factors for the member of cold-formed steel frame under compression. This paper proposes effective length factors for the steel wall frames based on the test results. A theoretical model is also derived to obtain the modulus of elastic support provided by the bracing at mid-height of steel wall frames in this research.

• ETRI Journal
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• 제39권2호
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• pp.284-291
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• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

• 동력기계공학회지
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• 제17권1호
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• pp.64-70
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• 2013

The heat transfer and friction factor characteristics of turbulent flows in three stationary channels have been investigated experimentally to check out the effect of divergence ratio. These are a constant cross-sectional channel and two diverging channels with ratio of divergence(Dho/Dhi) of 1.16 and 1.49. The measurement was conducted within the range of Reynolds numbers from 15,000 to 89,000 and the dimension of uniform cross-sectional test section is $100mm{\times}100mm$ at the cross section and 1,000 mm in length. The measurements of heat transfer coefficients and friction factors in the uniform channels were conducted as a reference. Because of the streamwise flow deceleration, the heat transfer and friction factor characteristics in the diverging channel were quite different from those of the constant cross-sectional channel. The effective friction factors and convective heat transfer coefficients increased with increasing the ratio of divergence of the channel.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• 한국산업정보학회논문지
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• 제19권2호
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• pp.1-13
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• 2014

In IEEE 802.11p/1609-based vehicular networks, vehicles are allowed to exchange safety and control messages only within time periods, called control channel (CCH) interval, which are scheduled periodically. Currently, the length of the CCH interval is set to the fixed value (i.e. 50ms). However, the fixed-length intervals cannot be effective for dynamically changing traffic load. Hence, some protocols have been recently proposed to support variable-length CCH intervals in order to improve channel utilization. In existing protocols, the CCH interval is subdivided into safety and non-safety intervals, and the length of each interval is dynamically adjusted to accommodate the estimated traffic load. However, they do not consider the presence of hidden nodes. Consequently, messages transmitted in each interval are likely to overlap with simultaneous transmissions (i.e. interference) from hidden nodes. Particularly, life-critical safety messages which are exchanged within the safety interval can be unreliably delivered due to such interference, which deteriorates QoS of safety applications such as cooperative collision warning. In this paper, we therefore propose a new interference-aware Dynamic Safety Interval (DSI) protocol. DSI calculates the number of vehicles sharing the channel with the consideration of hidden nodes. The safety interval is derived based on the measured number of vehicles. From simulation study using the ns-2, we verified that DSI outperforms the existing protocols in terms of various metrics such as broadcast delivery ration, collision probability and safety message delay.

• Journal of Magnetics
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• 제12권4호
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.

• 대한전기학회논문지
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• 제45권2호
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• pp.289-293
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• 1996

The basic study on laser triggered lightning was carried out for the active protection of lightning in power transmission system. The lengths of generated plasma channels were simulated numerically for variations of energy and pulse width of CO$_{2}$ laser by Runge-Kutta-Gill method. As results, the effective lengths of plasma channels were 2.3m, 2.67m and 3.4m respectively for energy of 45J, 60J and 100J of CO$_{2}$ laser pulse with pulse width of 50nsec using focusing mirror with focal length of 10m. And also the effects of pulse width of first pulse and tail pulse of CO$_{2}$ laser on the length of plasma channel were examined.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.421-424
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• 2002

In this paper, we introduce an encoder design technique of multiple symbol trellis coded modulation for noncoherent continuous phase frequency shift keying (MTCM/NCPFSK) on the interleaved Rician fading channel. To find dominant factors which affects the error probability of MTCM/NCPFSK, we derive the pairwise error probability (PEP) of MTCM/NCPFSK and find that the error probability mainly depends on the effective length of error event and the corresponding squared product distance (SPD) for the small value of Rician parameter K. Using this performance criteria, we search for the optimal encoder of MTCM/NCPFSK for the interleaved Rician fading channel. We also compare that encoder with the encoder designed for additive white Gaussian noise channel.