• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.136-147
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• 2009

In this paper we analyze the influence of source/drain (S/D) extension region design for minimizing short channel effects (SCEs) in 25 nm gate length single and double gate Silicon-on-Insulator (SOI) and Germanium-on-Insulator (GOI) MOSFETs. A design methodology, by evaluatingm the ratio of the effective channel length to the natural length for the different devices (single or double gate FETs) and technology (SOI or GOI), is proposed to minimize short channel effects (SCEs). The optimization of non-overlapped gate-source/drain i.e. underlap channel architecture is extremely useful to limit the degradation in SCEs caused by the high permittivity channel materials like Germanium as compared to that exhibited in Silicon based devices. Subthreshold slope and Drain Induced Barrier Lowering results show that steeper S/D gradients along with wider spacer regions are needed to suppress SCEs in GOI single/double gate devices as compared to Silicon based MOSFETs. A design criterion is developed to evaluate the minimum spacer width associated with underlap channel design to limit SCEs in SOI/GOI MOSFETs.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.8-13
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• 1999

In this paper, an analytical threshold voltage model is proposed by replacing the conventional GCA(Gradual Channel Approximation) with the assumption that a normal depletion layer width in the intrinsic region will vary quasi-linearly according to the channel direction. Derived threshold voltage expression is written as a function of the effective channel length, drain voltage, substrate bias voltage, substrate doping concentration, and the oxide thickness. Calculated results show almost similar trends with BSIM3v3's results in a satisfactory accuracy.

• Journal of Korean Society of Transportation
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• v.8 no.1
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• pp.5-15
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• 1990

As a result of the lack of methodology for the determination of navigational channel capacity and the consequence lack of effective management of traffic, navigational channels are often grossly underutilized or highly congested. The traditional rule of first-come-first-served admission of vessels to channels is not efficient as it assumes equal time intervals between entrance of consecutive vessels. A new vessel traffic management system is developed in this research and methodologies to measure the improvement in the channel capacity are developed. Methodology to measure the channel performances for three queue disciplines are developed. The effects of changes in major factors on the channel capacity model such as channel length, fleet mix and arrival rate, as well as changes in strategy are analyzed. Under given channel conditions, best strategy are recommended. Also, a method for effective stochastic channel capacity simulation was developed. The results of analysis and as ertions are compared with the results of simulation runs to prove their applicability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• Korean Management Science Review
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• v.17 no.3
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• pp.73-95
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• 2000

In Korea, the distribution channel for agricultural products is notorious for its complexity and ineffectiveness. In this sense, the Agricultural Cooperative has tried to clarify the distribution channel and reduce its length. However, there still exist much room for improvements. The Internet shopping mall specific for agricultural product, therefore, is drawing much attention because it can reduce the length of distribution channel drastically and improve effectiveness from the distribution perspective. To test the validity of such Internet-driven shopping mall, we gathered questionnaire data from the Internet based Hannaro Shopping Mall which is run directly by the Agricultural Cooperative. We performed experiments respectively for the two groups of operating personnel and consumers. Experimental results showed that several important factors can be identified which are significant statistically and deemed to have meaningful relationship with performance variables. Our results also showed that the Internet shopping mall has a great potential for improving the effectiveness of the distribution channel of the agricultural products.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4411-4417
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• 2010

This study was retrospectively to compare the exposure dose and the imaging quality in coronary CT angiography by using the 64 channel multidetector computed tomography and the 128 channel DSCT. Effective dose was calculated dose length product (DLP) by multiplied the convention factor of chest (0.017). Imaging quality was assessed by radiologists using the 5-point Likert scale. The DLP was ranged from 851 to $1277mGy{\cdot}cm$ (mean: 17.23 mSv) in the 64 channel MDCT and from 82 to $110mGy{\cdot}cm$ (mean: 1.58 mSv) in the of 128 channel DSCT, respectively. The score of imaging quality was respectively $3.31{\pm}0.62$ in 64 channel MDCT and $4.05{\pm}0.46$ in the 128 channel DSCT. The exposure dose of 128 channel DSCT has decreased 1ess 1/10. The score of imaging quality was significant difference between two modalities and the frequency (>4 good) in the 128 channel DSCT is about three times than that of the 64 channel MDCT. Therefore, the 128 channel DSCT in coronary CT angiography is clinically more effective modality for both investigators and patients.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.825-828
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• 1992

In this paper, a Hybrid method for an effective channel length($L_{eff}$) on lightly doped drain(LDD) MOSFET's is proposed. In order to investigate the difference of the gate bias and substrate bias defendence of the $L_{eff}$ among various LDD structures, the $L_{eff}$ of the LDD's are extensively examined using simulations and measurement. one group is proposed for conventional MOSFET and the other group Is proposed for LDD MOSFET. It is shown that the $V_{bs}$-dependence of the n-region is different from $V_{gs}$-dependence of it.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.8
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• pp.2923-2943
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• 2021

The double helix structure of DNA makes it diverse, stable and can store information with high density, and these characteristics are consistent with the requirements of molecular communication for transport carriers. In this paper, a specific structure of molecular communication system based on DNA length coding is proposed. Transmitter (Tx) adopts the multi-layer golden foil design to control the release of DNA molecules of different lengths accurately, and receiver (Rx) adopts an effective and sensitive design of nanopore, and the biological information can be converted to the electric signal at Rx. The effect of some key factors, e.g., the length of time slot, transmission distance, the number of releasing molecules, the priori probability, on channel capacity is demonstrated exhaustively. Moreover, we also compare the transmission capacity of DNA-based molecular communication (DNA-MC) system and concentration-based molecular communication (MC) system under the same parameter setting, and the peak value of capacity of DNA-MC system can achieve 0.08 bps, while the capacity of MC system remains 0.025 bps. The simulation results show that DNA-MC system has obvious advantages over MC system in saving molecular resources and improving transmission stability.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.442-448
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• 2014

For the first time, a novel analytical model of the net gain for a Raman-EDFA hybrid optical amplifier (HOA) is proposed and its various parameters optimized using a genetic algorithm. Our method has been shown to be robust in the simultaneous analysis of multiple parameters (Raman length, EDFA length, and pump powers) to obtain large gain. The optimized HOA is further investigated at the system level for the scenario of a 50-channel DWDM system with 0.2-nm channel spacing. With an optimized HOA, a flat gain of >17 dB is obtained over the effective ITU-T wavelength grid with a variation of less than 1.5 dB, without using any gain-flattening technique. The obtained noise figure is also the lowest value ever reported for a Raman-EDFA HOA at reduced channel spacing.