• 대한전자공학회논문지SD
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• 제37권12호
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• pp.1-9
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• 2000

미세구조 N-채널 MOSFET의 게이트-소스 전압에 의존하는 유효 채널 캐리어 이동도와 소스 및 드레인 기생저항의 정확한 분리 추출을 위해서 새로운 ERM-방법을 제안하였다. ERM-방법은 선형영역에서 동작하는 게이트 길이가 다른 두개의 소자($W_m/L_m=30{\mu}m/0.6{\mu}m, 30{\mu}m/1{mu}m$)에 적용되었고 유효 채널 캐리어 이동도를 모델링하고 추출하는 과정에서 게이트-소스 전압에 의존하는 소스 및 드레인 기생저항의 영향을 고려하였다. ERM-방법으로 추출된 특성변수들을 사용한 해석적 모델식과 소자의 측정데이터를 비교해본 결과 오차가 거의 없이 일치하는 것을 확인하였다. 따라서, ERM-방법을 사용하면 대칭구조 및 비대칭구조 소자의 유효 채널 캐리어 이동도, 소스 및 드레인 기생저항과 다른 특성변수들을 정확하고 효율적으로 추출할 수 있을 것으로 기대된다.

• 전자공학회논문지C
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• 제35C권4호
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• pp.21-29
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• 1998

As silicon geometry shrinks into deep submicron and the operating speed icreases, higher accuracy is required in the analysis of the propagation delays of the gates and interconnects in an ASIC. In this paper, the driving characteristics of a CMOS gate is represented by a gatedriver model, consisting of a linear resistor $R_{dr}$ and an independent ramp voltage source $V_{dr}$ . We drivered $R_{dr}$ and $V_{dr}$ as the functions of the timing data representing gate driving capability and an effective capacitance $C_{eff}$ reflecting resistance shielding effect by interconnet circuits. Through iterative applications of these equations and AWE algorithm, $R_{dr}$ , $V_{dr}$ and $C_{eff}$ are comuted simulataneously. then, the gate delay is decided by $C_{eff}$ and the interconnect circuit delay is determined by $R_{dr}$ and $V_{dr}$ . this process has been implemented as an ASIC timing analysis program written in C language and four real circuits were analyzed. In all cases, we found less than 5% of errors for both of gate andinterconnect circuit delays with a speedup factor ranging from a few tens to a few hundreds, compared to SPICE.SPICE.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 센서학회지
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• 제26권2호
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• 대한전자공학회논문지SD
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• 제41권5호
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• pp.43-50
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• 2004

현재의 반도체 공정은 Deep Sub- Micmn (DSM)으로 발전하면서, 선폭이 줄어들고 구동 주파수가 높아지고 있다. 이로 인해 clock source로부터 clock을 필요로 하는 각 단자(sink)까지의 '지연시간의 최대 차'로 정의되어지는 clock skew가 회로의 속도 향상에 있어 중요 제약요소가 되고 있다. 또한 이를 얼마나 줄이느냐 하는 것은 동기식 회로 설계에 있어 중요한 문제가 되고 있다. 따라서 낮은 clock skew를 위한 배선 기술에 대해 많은 연구들이 이루어지고 있다. 본 논문에서는 clock skew를 줄이기 위한 방법으로서 새로운 Advanced clock Tree Generation(ACTG) 방법을 개발하였다. ACTG는 2단계의 계층적 routing을 통해 최적의 clock tree를 구성한다. 본 논문에서 제안하는 알고리즘을 C 언어로 프로그램하여 구현하 후 벤치마크 테스트 데이터에 대하여 실험한 결과, 주어진 skew 범위를 만족시키면서 지연 시간을 감소시키는 효과를 얻을 수 있었다.

• 한국공작기계학회논문집
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• 제11권2호
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• pp.17-23
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• 2002

A cylindrical capacitance-type spindle displacement sensor was developed and its effectiveness as a system to monitor cutting forces during hard turning was tested in this research. The sensor was installed between the face of spindle cover and the chucking element and measured pure radial motion of the spindle under the condition with presence of roundness error at measured surface. To prove the effectiveness of the developed system hard aiming tests using ceramic inserts and tool steel as workpiece were conducted. The workpiece was hardened up to 65 Rc. The variations of pure radial motion of the spindle ware measured during the cutting tests. The signals from the sensor showed the same pattern of cutting force variations from the tool dynamometer due to the progress of tool wear. As the flank wear of the ceramic tool increased both static component of cutting forces and the amount of center shift of spindle orbit increased, Results from the research showed that the developed sensor could be utilized as an effective and cheap on-line sensing device to monitor cutting conditions and tool performance in the un-manned machining center.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2178-2186
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• 2018

Online identification of load parameters is the premise of establishing a stable and highly-efficient ICPT (Inductive Coupled Power Transfer) system. However, compared with pure resistive load, precise identification of composite load, such as resistor-inductance load and resistance-capacitance load, is more difficult. This paper proposes a method for detecting the composite load parameters of ICPT system utilizing harmonics. In this system, the fundamental and harmonic wave channel are connected to the high frequency inverter jointly. The load parameter values can be obtained by setting the load equation based on the induced voltage of secondary-side network, the fundamental wave current, as well as the third harmonic current effective value received by the secondary-side current via Fourier decomposition. This method can achieve precise identification of all kinds of load types without interfering the normal energy transmission and it can not only increase the output power, but also obtain higher efficiency compared with the fundamental wave channel alone. The experimental results with the full-bridge LCCL-S type voltage-fed ICPT system have shown that this method is accurate and reliable.

• 전기학회논문지
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• 제67권11호
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• pp.1512-1516
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• 2018

The power system and control system constantly reveals surge voltage such as switching surge of lighting devices and power conversion devices, operating and stops surge of rotating devices, charge & discharge surge, opening & closing surge of circuit breakers and the like. Such a surge voltages can cause damage or malfunction of the element such as CPU, Memory, semiconductor etc. In the industry, in order to protect the system from the surge voltage, a surge protector with low discharge starting voltage, fast response time, and low capacitance is required, and technical development research for that is ongoing. In this paper, in order to solve the problem of the existing GDT discharge tube not discharging from the transient voltage which is higher than the commercial voltage and lower than the discharge voltage of the discharge element, we have developed a discharge element having the control electrode & control circuit. The discharge element having the control electrode and the control circuit can control the discharge voltage according to the needs of the consumer and can satisfy the requirement of the discharge element and the technology of the surge protector downsizing technology and the surge protection technology. It is judged to be effective for development.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 터널과지하공간
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• 제6권4호
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• pp.306-315
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• 1996

This paper presents an application of the TDR(Time Domain Reflectometry) to the monitoring of the deformation of rock mass with grouted coaxial cables through laboratory tests. The grouted cable can easily deform together with the rock mass movements, and the deformed cable loses its original capacitance and the reflected waveform produced along the deformed cable consequently represents a change of voltage pulse. Therefore, it is possible to monitor the deformation of rock mass by measuring the changes in these reflection signatures. Shear test of the cemented mortar containing a specimen of coaxial cable showed that the shear deformation correlated linearly with the reflection coefficient, so the TDR was effective to monitor the displacement of the rock mass. Bending test were carried out in order to determine the influence of the crooked cables on the monitoring of rock mass movements. Controlled cirmping and shearing test upon a cable of 50 m long, 12.7 mm diameter showed not only the fact that the reflection amplitudes decreased as the cable length increased but also the proper crimping depth, width and interval between two adjacent crimps. Two coaxial cables-one 100 m long and other 175m long-were installed and grouted into the separate boreholes drilled in a sedimentary formation. The behavior of the cable was monitored with metallic TDR cable tester to measure rock mass deformation based on the interpretative techniques developed through laboratory tests.