• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.221-229
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• 2017

In this study, a wet impregnation method was applied to catalysts based on the active metal Pt in order to confirm the oxidation characteristics of various commercial alumina supports at room temperature. The catalysts were characterized using XPS, CO-chemisorption, and BET. Various $Pt/Al_2O_3$ catalysts controlled the oxygen species of Pt by the electronegativity of electrons and charges when the catalyst was prepared according to the heat treatment conditions. The reason that the dispersion degree decreases with increasing Pt loading seems to be attributed to HT (Huttig Temperature) of Pt. In addition, the minimum hydrogen concentration that can be controlled at room temperature can control hydrogen from metallic Pt up to 1.0 vol% at over 70.09% in the catalyst.

• Composites Research
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• v.16 no.3
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• pp.68-74
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• 2003

In this paper, intermetallic/metal laminated composites have been successfully produced that utilizes SHS reactions between Ni and Al elemental metal foils. The reaction between Ni and Al started from the nucleation and growth of NiA1$_3$ and was followed by the diffusional growth of Ni$_2$A1$_3$ between Ni and NiA1$_3$. The SHS reaction was thermodynamically analyzed through the final volume fraction of the non-reacted Al related with the initial thickness ratio of Ni:Al and prior heat treatment. Thermally aging these 1aminates resulted in formation of a functionally gradient series of intermetallic phases. Microstructure showed that the intermetallic volume percent was 82, 59.5, 40% in the 1:1, 2:1, 4:1 thickness ratio specimen. Main phases of the intermetallic were NiAl and Ni$_3$Al having higher strength at room and high temperatures.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.1
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• pp.53-62
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• 1992

Material can be degraded by using it for a long service under the high temperature and pressure circumstances, Therefore, material degradation can affect the strength of mechanical structures. At present, the life prediction of the degraded structures is considered as an important technical problem. In this paper, the degraded 21/4Cr-lMo steel is the material used for about 10 years around 400.deg. C in an oil refinery plant. The recovered one was prepared out of the above degraded steel by heat treatment for one hour at 650.deg. C. The degradation effect was investigated through the tension test, Hardness test and Charpy impact test. On the smooth surface material, the fatigue crack initiation, growth and coalescence stages of the distributed small cracks were investigated with photographs, and the crack length and density were measured. The measuring results were analyzed by quantative and statistical methods.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.327-332
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• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.5
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• pp.516-522
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• 2002

For the experimental study of rotor steel, seven kind of specimens with different degradation levels were prepared by isothermal heat treatment at $630^{\circ}C$. Spherical indentation technique was developed to evaluate the flow properties of metallic materials in carbon steel, stainless steel, and alloys, etc. Through the spherical indentation test, differently degraded 1Cr-1Mo-0.25V steel's mechanical properties were observed and compared with conventional standard test data. The flow properties of 1Cr-1Mo-0.25V steel's were estimated by analyzing the indentation load-depth curve. To characterize the flow property, we used material yield slope and constraint factor index rather than strain-hardening exponent because the variation of strain-hardening exponent was very little and the data showed irregularly. And the constraint factor's effect was small when the material yield slope was taken into account.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.233-238
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• 2000

t-$ZrO_2/Al_2O_3$composites having a superior biocompatability and phase stability were prepared by adding 0~4 mol% of $Eu_2O_3$and sintered for 1 h at $1600^{\circ}C$ to evaluate phase stability, chromaticity and mechanical properties of the composites. No tetragonal to monoclinic phase transformation was observed for the composites containing $Eu_2O_3$after heat treatment for 20 h at $180^{\circ}C$ under 3.5 MPa water vapor pressure condition. As $Eu_2O_3$content increased, the color of the composites was changed from a slight white ivory to a light pink. The strength and the fracture toughness of the composites containing $Eu_2O_3$were above 620 MPa and 7.6 MPa.$m^{1/2}$, respectively, when $Eu_2O_3$was added up to 3 mol%.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.25-29
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• 2001

This study examined the effects of carbon surface modification by the epoxy resin coating on the electrochemical performance. The mesocarbon microbeads(MCMB) carbon was surface-modified by coating the epoxy resin and its electrochemical properties as an anode was examined. The surface coating of MCMB was carried out by refluxing the MCMB powders in a dilute H2SO4 solution, and mixing them with the epoxy resin-dissolved tetrahydrofuran(THF) solution. Under heat-treatment of the coated MCMB at the temperature over $1000^{\circ}C$, the epoxy-resin coating layer was converted into amorphous phase which was identified by a high resolution transmission electron microscope (HRTEM). The epoxy resin coated MCMB has higher Brunauer-Emmett-Teller (BET) surface area, higher charge/ discharge capacity and better cycleability than a raw MCMB without coating. The reason for the enhancement of cell performance by the epoxy resin coating were considered as the epoxy resin coating layer plays an important role to be a barrier for carbon reacting with electrolyte and to retard the formation of passivation layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.