• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.37-42
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• 1999

In this paper, some of main processes for the next generation integrated circuits, such as Cu damascene process using CMP, electron beam lithography, $SiO_2$ CVD and RIE, Ti/Cu-CVD were carried cut and then, two level Cu interconnects were accomplished. In the results of CMP unit processes, a 4,635 ${\AA}$/min of removal rate, a selectivity of Cu : $SiO_2$ of 150:1, a uniformity of 4.0% are obtained under process conditions of a head pressure of 4 PSI, table and head speed of 25rpm, a oscillation distance of 40 mm, and a slurry flow rate of 40 ml/min. Also 0.18 ${\mu}m\;SiO_2$ via-line patterns are fabricated using 1000 ${\mu}C/cm^2$ dose, 6 minute and 30 second development time and 1 minute and 30 second etching time. And finally sub-0.2 ${\mu}$ twolevel metal interconnects using the developed processes were fabricated and the problems of multilevel interconnects are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.184-189
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• 2005

An experimental study of the femtosecond laser machining of Si materials was carried out. Direct laser machining of the materials for the feature size of a few micron scale has the advantage of low cost and simple process comparing to the semiconductor process, E-beam lithography, ECM and other machining process. Further, the femtosecond laser is the better tool to machine the micro parts due to its characteristics of minimizing the heat affected zone(HAZ). As a result of line cutting of Si, the optimal condition had the region of the effective energy of 2mJ/mm-2.5mJ/mm with the power of 0.5mW-1.5mW. The polarization effects of the incident beam existed in the machining qualities, therefore the sample motion should be perpendicular to the projection of the electric vector. We also observed the periodic ripple patterns which come out in condition of the pulse overlap with the threshold energy. Finally, we could machined the groove with the linewidth of below $2{\mu}m$ for the application of MEMS device repairing, scribing and arbitrary patterning.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.130-133
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• 2010

Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

• Progress in Superconductivity
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• v.7 no.1
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• pp.17-21
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• 2005

We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.368-370
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• 2007

AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. The resulting good filled uniform nano molded structure through hot embossing molding process shows the validity of the fabricated nano pattern masters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.19.2-19.2
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• 2011

ZnO nanowires have been fabricated by vapor-liquid-solidification with hot-walled pulsed laser deposition method. The diameter of ZnO nanowire has been systematically controlled simply by changing the thickness of Au catalyst. Field effect transistors with different diameter have been fabricated by using photolithography and e-beam lithography. The threshold voltage of ZnO nanowire FET showed enhanced mode and depleted mode depending on the diameter of ZnO nanowires. This is mainly due to the change of the carrier concentration depending on the size of nanowires. We have fabricated ZnO nanowire inverters using nanowire FETs. This simple method to fabricate ZnO nano-inverter will be useful to open the possibility of ZnO nanoelectronic applications.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.731-736
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• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

• ETRI Journal
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• v.24 no.5
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• pp.341-348
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• 2002

We propose an asymmetric sampled grating laser and a multi-wavelength laser array associated with it. Asymmetric sampling periods combined with an index shifter make it possible to use first order reflection for lasing operations. With the structure of our design, we achieved a simple fabrication procedure as well as a high yield without using complex and time-consuming e-beam lithography for multi-period gratings. We analyzed the effect of mirror coating by numerical analysis to improve single mode and power extraction performance. By using high reflection-antireflection coatings, we obtained high power extraction efficiency without degradation of the single mode property. For the multi-wavelength laser array, to gain wavelength control, we varied the sampling periods from one laser to an adjacent laser across the array. With this approach, we showed the feasibility of an array of up to 30 channels with 100 GHz wavelength spacing.