• 한국생산제조학회지
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• 제18권6호
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• pp.558-564
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• 2009

To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• 전자공학회논문지D
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• 제36D권10호
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• pp.23-30
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• 1999

본 논문에서는 전자선 직접 묘화 시스템을 이용하여 50 nm 이하의 패턴 폭을 가지는 패터닝 결과를 얻기 위한 실험을 수행하였다. SAL601 negative E-beam PR(Photo Resist)를 이용하여 실험을 진행하였고, E-beam 장비의 특성을 최대로 이용하기 위해서 PR의 두께를 100nm로 줄이고, field 크기를 200 ${um}m$로 줄여 실험하였으며, 또한 SAL601 PR의 경우 작은 선폭을 얻기 위해 중요한 요인 중에 하나인 PEB (Post Expose Bake) 온도와 시간을 줄이면서 실험을 진행하였다. 여기에 디지타이징 방식의 최적화를 통하여 50 nm 이하의 패턴 폭을 가지는 단선 패터닝 결과를 얻었다. 이 공정을 이용하여 단전자 메모리 소자에 응용 가능한 50 nm 급의 silicon 양자선과 silicon 양자점을 제작하였다. 이는 현재 많이 연구되고 있는 단전자 기억소자 및 국소 채널 MOS소자 제작에 유용할 것이다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 추계학술대회 논문집
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• pp.285-286
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• 2008

• 한국정밀공학회지
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• 제25권3호
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• pp.7-14
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• 2008

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.943-944
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.211-211
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• 2006

• Progress in Superconductivity
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• 제10권2호
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• 한국진공학회지
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• 제10권2호
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• pp.257-261
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• 2001

InGaAs/GaAs 초격자 구조들 사이에 InAs/GaAs 양자점을 MBE로 성장하고 광특성을 측정한 결과 매우 균일한 양자점을 얻을 수 있었다. Self-consistent한 이론 계산으로부터 얻은 p-i-n 구조의 최적 조건으로 단일광자구조를 성장하고 단일광자소자를 e-beam lithography를 이용하여 제작하였다. 전기적 특성인 I-V곡선에서 나타난 전기 이력현상으로부터 단일 전자와 단일 정공이 다른 전압에서 투과하여 단일 전자-정공 재결합 현상이 나타나고 있음을 확인하였다.