• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.1253-1256
• /
• 2005

We have developed an electron lithography method, Electron Emission Lithography (EEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MIM technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 10 um in a system capable of 100 m resolution. Further improvements in resolution to 50 nm are possible.

• 한국금형공학회:학술대회논문집
• /
• 2008.06a
• /
• pp.35-38
• /
• 2008

A pattern master and a Ni stamper for 50nm class of patterns are fabricated through e-beam lithography and Ni electroforming process. A model pattern set is designed, which is based on unit patterns of 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The e-beam process is optimized to fabricate designed patterns with some parameters including dose, accelerating voltage, focal distance and developing time. For Ni electroforming to fabricate Ni stamper, a seed layer, a conducting layer, is deposited first on the pattern master fabricated by an e-beam lithography process. Ni, Ti/Ni and Cr are first tested to find optimal seed layer process. Currently the best result is obtained when adopting Cr deposited to be 100nm thick with continuous tilting motion of the master substrate during the deposition process.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.10
• /
• pp.1541-1548
• /
• 2004

A nano-stage simulation tool is developed for an advanced E-beam lithography system. Even if piezo-actuators are believed to be compatible fer the E-beam lithograpy system it is difficult to predict their characteristics due to their nonlinearities such as hysteresis and creep. In this paper, the nonlinear properties are modeled for a piezo-actuator by considering the voltage range and speed variations. The hysteresis is described as the first order differential equation with 24 sets of parameters and the creep is modeled as a time-dependent logarithmic function with 2 sets of a parameter. A two-axis nano stage with piezo-actuators are investigated for realizing nano scale motions. The characteristics of flexure guide mechanisms are analyzed based on the finite element method using the ANSYS software. The simulation tool for the nano stage is constructed by using the RecurDyn software. The dynamic response of the nano stage is obtained in simulations and compared with the experimental data.

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.237-238
• /
• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.6
• /
• pp.515-521
• /
• 2003

There are now many theoretical investigations and real manufactures for numerous applications of photonic crystals (PCs) associated with photonic band gap and photonic integrated circuits. However, there are some difficulties to design and fabricate the desired pattern quality. It is not easy to satisfy accurate critical dimension (CD) for patterns with arbitrary shapes and pitch sizes aligned in various directions. In this work, we report the optimum conditions to better fabricate and design, and greatly improve pattern quality in delineating two-dimensional (2D) PCs in the nanometer range using single- step e-beam lithography system with conventional exposure mode.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1119-1120
• /
• 2007

Nano-sized metal patterns were successfully fabricated on flexible PET substrate using nanoimprint lithography. 70nm line and space PMMA resist pattern was formed on PET substrate without residual layer by 'artial filling effect' and 20nm thin Cr metal layer was deposited by e-beam evaporation. Then, PMMA resist was selectively removed by acetone and 70nm narrow Cr pattern was formed.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.24-25
• /
• 2007

Nano-sized metal patterns were successfully fabricated on flexible PET substrate using nanoimprint lithography. 70nm line and space PMMA resist pattern was formed on PET substrate without residual layer by "partial filling effect' and 20nm thin Cr metal layer was deposited by e-beam evaporation. Then, PMMA resist was selectively removed by acetone and 70nm narrow Cr pattern was formed.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.2 s.233
• /
• pp.228-231
• /
• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.1
• /
• pp.200-205
• /
• 1995

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.6
• /
• pp.144-150
• /
• 1996

The purpose of this paper is to develop a simulation program to predict resist prifile in electron-beam lithography, where the main issue is proximity effect. The simualtion program composes of monte-carlo simulation, exposure simulation and development simulation. In nonte-carlo simulation, the absorbed energy in the resist is calculated when one electron is incident into resist, using hybrid model on the basis of the rutherford differential scattering cross section and moller theory. In exposure simulation, the absorbed energy in the resist is calculated when electrons are incident in exposure pattern. In the program, the developed profile depending on time is obtained by string model. The 0.2$\mu$m and the 0.3$\mu$m line and space patterns are experimentally delineated and compared to the simulation results to check the relevance of the program.