• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.558-564
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• 2009

To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.23-30
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• 1999

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.285-286
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.25 no.3
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• pp.7-14
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.943-944
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.211-211
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• 2006

• Progress in Superconductivity
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• v.10 no.2
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.257-261
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• 2001

InAs/GaAs quantum dots between InGaAs/GaAs superlattices were grown by MBE. The quantum dots size is shown to be very uniform by measuring photoluminescence spectra of quantum dots. Single photon structures based on self-consistent calculation were grown and single photon devices were fabricated by e-beam lithography. The electrical hystereses of I-V curves for single Photon devices would result from single electron-hole recombination, where the resonant-tunneling voltages of electron and hole are different.