• 제목/요약/키워드: e-Beam

검색결과 1,966건 처리시간 0.032초

Development of Intelligent Remote Beam Control Function in E-Beam Manufacturing System (전자빔 가공기의 지능형 원격 빔 조절 기능의 개발)

  • Lim Sun-Jong;Lyou Joon
    • Transactions of the Korean Society of Machine Tool Engineers
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    • 제15권2호
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    • pp.24-29
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    • 2006
  • The use electron-beam(E-beam) manufacturing system provides a means to alleviate optic exposure equipment's problems. We are developing an E-beam manufacturing system with scanning electron microscope(SEM) function. The E-beam manufacturing system consist of high voltage generator, beam blanker, condenser lenses, object lenses, stigmator and stage. The development of E-beam manufacturing system is used on the method of remaking SEM's structure. The functions of SEM are developed. It is important for the test of E-beam performance. In E-beam manufacturing system and SEM, beam focus is important function. In this paper, we propose intelligent remote control function for beam focus in E-beam manufacturing system. The function extends the user's function and gives convenience.

Development of Controller for Optimal Beam Scanning in E-Beam Manufacture System (전자빔 가공기에서 최적 빔 주사를 위한 제어기의 개발)

  • Lim S.J.;Lee C.H.;Kang J.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.154-157
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    • 2005
  • The use of electron-beam(E-Beam) manufacture systems provides a means to alleviate optic exposure equipment's problems. We designed an E-beam manufacture system with SEM function. Optimal beam scanning is one of the most important conditions in the performance of E-beam and SEM. The performance of E-beam manufacture system and images of SEM are a close affinity with each other. Developed E-beam manufacture system consist of the controllers of high voltage, scanning, optic and high voltage generator. In this paper, we analyze the condition of steady beam scanning and describe the development of controller fer optimal beam scanning.

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Changes of SDS-PAGE Pattern of Pork Myofibrillar Proteins Induced by Electron Beam Irradiation

  • Whang Key;Jeong, Dong-Kwan;Kim, Hyuk-Il
    • Preventive Nutrition and Food Science
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    • 제10권4호
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    • pp.378-381
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    • 2005
  • Actin and myosin solutions and fresh ground pork were irradiated with the electron beam (e-beam) at a dose of 0, 1.5, 3.0, 5.0 and 10 kGy. The changes in SDS-PAGE pattern of 2 proteins and the salt-soluble proteins extracted from ground pork after e-beam irradiation were monitored. When the myosin solution was irradiated with e-beam, myosin was degraded completely. Complete myosin degradations were observed even with the lowest dose (1.5 kGy) of e-beam treatment. Actin was degraded with the irradiation, but to a less extent than myosin was. The degradation of actin increased as the e-beam treatment increased from 1.5 to 10.0 kGy. Among the salt-soluble proteins extracted from ground pork, myosin was degraded gradually when the e-beam dose increased from 1.5 up to 10.0 kGy. Similar gradual increase in the degradation of actin also occurred with the increase of irradiation. Increases of 2 low molecular weight compounds (<29 kDa) were observed when the irradiation dose increased from 1.5 to 10.0 kGy. These 2 molecules are thought to be the breakdown products produced from the degradation of major salt-soluble proteins, myosin and actin. The salt-soluble protein content of ground pork did not change with the e-beam irradiation.

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

  • Oh, Seung Kyu;Song, Chi Gyun;Jang, Taehoon;Kwak, Joon Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.617-621
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    • 2013
  • This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

Effects of E-beam treatment on the interfacial and mechanical properties of henequen/polypropylene composites

  • Cho, Dong-Hwan;Lee, Hyun-Seok;Han, Seong-Ok;Drzal, Lawrence T.
    • Advanced Composite Materials
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    • 제16권4호
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    • pp.315-334
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    • 2007
  • In the present study, chopped henequen natural fibers without and with surface modification by electron beam (E-beam) treatment were incorporated into a polypropylene matrix. Prior to composite fabrication, a bundle of raw henequen fibers were treated at various E-beam intensities from 10 kGy to 500 kGy. The effect of E-beam intensity on the interfacial, mechanical and thermal properties of randomly oriented henequen/polypropylene composites with the fiber contents of 40 vol% was investigated focusing on the interfacial shear strength, flexural and tensile properties, dynamic mechanical properties, thermal stability, and fracture behavior. Each characteristic of the material strongly depended on the E-beam intensity irradiated, showing an increasing or decreasing effect. The present study demonstrates that henequen fiber surfaces can be modified successfully with an appropriate dosage of electron beam and use of a low E-beam intensity of 10 kGy results in the improvement of the interfacial properties, flexural properties, tensile properties, dynamic mechanical properties and thermal stability of henequen/polypropylene composites.

Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs

  • Yu, Jae-In;Lim, Jin-Hwan;Yu, Jae-Yong;Kim, Ki-Hong
    • Journal of Electrical Engineering and Technology
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    • 제1권4호
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    • pp.543-545
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    • 2006
  • Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

Enhancement of a mechanical property of metal sheaths (Cu and Nb) of MgB2 superconducting wires by E-beam irradiation

  • Kim, C.J.;Lee, T.R.;Jun, B.H.
    • Progress in Superconductivity and Cryogenics
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    • 제24권3호
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    • pp.30-34
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    • 2022
  • Effects of electron beam (EB) irradiation on the mechanical strength of Cu (conducting sheath) and Nb (diffusion barrier) of Cu/Nb/MgB2 superconducting was investigated. Wire- and tape-type Cu/Nb/MgB2 samples were irradiated at E-beam energy of 2.5 MeV and 5 mA and a maximum E-beam dose was 5×1017 e/m2. The hardness value of Cu and Nb region was measured by the Vickers micro-hardness method. In the case of the wire sample, the hardness of Cu and Nb increased proportionally as the dose was increased up to 5×1017 e/m2, whereas in the case of the tape sample, the hardness increased up to a dose of 0.5×1017 e/m2, and decreased slightly 5×1017 e/m2. The hardness increase of Cu and Nb is believed to be due to the decrease of the deformability of Cu and Nb due to the defects formed inside the materials by E-beam irradiation.

Study on Energy Distribution of the 6 MeV Electron Beam using Gaussian Approximation (가우시안 근사를 이용한 6 MeV 전자선의 에너지분포에 관한 연구)

  • Lee, Jeong-Ok;Kim, Seung-Kon
    • Journal of radiological science and technology
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    • 제22권2호
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    • pp.53-56
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    • 1999
  • A Gaussian distribution was parametrized for the initial distribution of the electron beam emitted from a 6MeV medical linear accelerator. A percent depth dose was measured in a water phantom and the corresponding Monte Carlo calculations were performed starting from a Gaussian distribution for a range of standard deviations, ${\sigma}=0.1$, 0.15, 0.2, 0.25, and 0.3 with being the mean value for the Incident beam energy. When measurement and calculation were compared, the calculation with the Gaussian distribution for ${\sigma}=0.25$ turned out to agree best with the measurement. The results from the present work can be utilized as input energy data in planning an electron beam therapy with a Monte Carlo calculation.

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