[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5370/JEET.2006.1.4.543

Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs

Yu, Jae-In (Department of Physics, Yeungnam University)
Lim, Jin-Hwan (Yu Electronics Company)
Yu, Jae-Yong (Yu Electronics Company)
Kim, Ki-Hong (Department of Visual Optics, Kyungwoon University)

Publication Information

Journal of Electrical Engineering and Technology / v.1, no.4, 2006 , pp. 543-545 More about this Journal

Abstract

Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

Keywords

Surfacephotovoltage; GaAs; E-Beam;

Citations & Related Records

Reference

1	S. Kumar, T. Ganguli, P. Bhattacharya, U.N. Roy, S.S. Chandvankar, B.M. Arora, Appl. Phys. Lett. 72 (1998) 3020 DOI ScienceOn
2	Q. Liu, H.E. Ruda, G.M. Chen, M. Simard-Normandin, J. Appl. Phys. 79 (1996) 7790 DOI ScienceOn
3	A.M. Goodman, J. Appl. Phys. 32 (1961) 2550 DOI
4	F391-96, Annual Book of ASTM Standards, American Society for Testing and Materials, Philadelphia, PA, 1996
5	Many A, Goldstein Y, Grover NB. Semiconductor surfaces. North-Holland, Amsterdam, 1963
6	Sze SM. Physics of semiconductor surfaces 2nd ed. John Wiley, New York, 1981
7	Madelung O. (Ed.), Landolt Bomstein numerical data. Springer,Berlin, 1987