• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.33 no.1
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• pp.32-37
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• 2000

Silver-alginate (Ag-alginate) was prepared with Na-alginate extracted from marine brown algae. The antibacterial effect of Ag-alginate against Staphylococcus aureus and Escherichia coli was carried out by measuring optical density of liquid culture at 600 nm. The cell growth of S. aureus and E. coli was very active at pH 7, and was inhibited by adding Ag-alginate with more than $0.006 wt.{\%}$ of stiver content. The cell growth of S. aureus .and E. coli was also influenced by the characteristics of counter Jon of silver. The cell growth of S. aureus was less inhibitory than E. coli at the same concentration of Ag-a1ginate.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2969-2973
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• 2014

A new process to fabricate a composite LSCF-Ag cathode material for SOFCs by electron beam (e-beam) irradiation process has been suggested for operation under intermediate temperature range of $600-700^{\circ}C$. A composite LSCF-Ag cathode with uniformly coated Ag nanoparticles on the surface of the LSCF material was prepared by a facile e-beam irradiation method at room temperature. The morphology of the composite LSCF-Ag material was analyzed using a TEM, FE-SEM, and EDS. The prepared composite LSCF-Ag material can play a significant role in increasing the electro-catalytic activities and reducing the operating temperature of SOFCs. The performance of a tubular single cell prepared using the composite LSCF-Ag cathode, YSZ electrolyte and a Ni/YSZ anode was evaluated at reduced operating temperature of $600-700^{\circ}C$. The micro-structure and chemical composition of the single cell were investigated using a FE-SEM and EDS.

• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.565-568
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• 2007

e-Science is for increasing the research productivity in epochal way using research resources like high performance computers, large capacity data storage, experimental instrument and researchers. For the research activities without being limited by time and space, the collaboration system is prerequisite condition. This paper shows the comparisons and analysis of features of popular collaboration systems in the point of e-Science. We considered that the number of supporting video streams, scalability and cost are main issues for the e-Science collaboration system. By these, we conclude that Access-Grid(AG) is best suitable for the e-Science collaborative research system. This paper shows the current AG status and the future way of AG.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.352-352
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• 2013

국내 에너지 소비량의 21.6%가 건물 분야에 소비되고 있다. 창호는 벽체에 비해 8~10배 이상 낮은 단열 특성을 가지기 때문에 열 손실량이 크다. 유리는 창호를 이루는 요소 중 가장 큰 면적을 차지하고 있으며, 창호의 단열성능을 2배로 향상시키면 30% 이상 건물의 에너지 절감 효과를 가질 수 있다. 창호의 단열 성능을 향상시키기 위해서 Low-e(emissivity) 기술 연구가 진행 중이다. 이번 실험에서는 RF 마그네트론 스퍼터링 시스템을 사용하여 XG 유리기판 위에 ZnO박막을 증착하고, evaporator 장비를 사용하여 metal층인 Ag를 증착하였다. 그리고 다시 한번 ZnO박막을 증착하였다. Low-e 연구에 활용할 수 있는지를 확인하기 위해 XRD, AFM, 투과도를 측정하였다. ZnO박막의 증착 조건은 초기압력 $3.0{\times}10^{-6}$ Torr, 공정압력 $2.0{\times}10^{-2}$ Torr, RF파워 30 W, Ar gas는 50 sccm, 증착온도는 상온으로 하였다. Metal층인 Ag를 증착하기 위해 evaporator의 증착 조건은 Rotate rate 2 rpm, voltage 0.3V, 공정압력 $5.0{\times}10^{-6}$ Torr이며, 변수로 Ag두께를 3,5,7,9,11,13,15 nm로 하였다. AFM 측정결과 Ag두께가 증가할수록 RMS roughness값이 높아졌으며, 최소 0.71 nm의 거칠기를 가지는 것을 확인하였다. XRD분석결과 37도 부근의 피크가 발생하여 ZnO 박막이 결정질 구조임을 확인할 수 있었다. 그리고 UV-Visible-NIR 분광 광도계를 이용하여 광학적 투과를 측정한 결과 Ag두께가 13 nm일 때 가시광 영역의 투과도가 최대 75%, 적외선 영역의 투과도가 최소 28%로 좋은 차단 특성을 가지는 것을 확인하였다. 위 결과들로 ZnO 박막이 Low-e 기술에 활용될 수 있음을 확인하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.