• Title/Summary/Keyword: dual-threshold

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Implementation of Dual Rate G.723 ADPCM Speech codec (16Kbps와 40Kbps의 Dual Rate G.723 ADPCM 음성 codec 구현)

  • Kim, Jae-Ohe;Han, Kyong-Ho
    • Proceedings of the KIEE Conference
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    • 1998.07g
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    • pp.2480-2482
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    • 1998
  • In this paper, the implementation of dual rate ADPCM using G.723 16Kbps and 40Kbps speech codec algorithm is handled. For small signals, the low rate 16Kbps coding algorithm shows the same SNR as the high rate 40Kbps coding algorithm, while the low rate 16Kbps coding algorithm shows the lower SNR than the high rate 40Kbps coding algorithm for large signal. To obtain the good trade-off between the data rate and synthesized speech quality, we applied low rate 16Kbps for the small signal and high rate 40Kbps for the large signal. Various threshold values determining the rate are tested for good trade off data rate and speech quality. Also the low pass filter effect of speech input and output devices is simulated at several cut-off frequencies. To simulation result shows the good speech quality at a low rate comparing with 16Kbps & 40Kbps.

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A study on gap treatment in EMS type Maglev (상전도 흡입식 자기부상열차에서 공극처리방식에 대한연구)

  • Sung, Ho-Kyung;Jho, Jeong-Min;Lee, Jong-Moo;Kim, Dong-Sung
    • Proceedings of the KSR Conference
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    • 2006.11a
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    • pp.189-197
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    • 2006
  • Maglev using EMS becomes unstable by unexpected big air-gap disturbance. The main causes of the unexpected air-gap disturbance are step-wise rail joint and large distance between rail splices. For the stable operation of the Maglev, the conventional system uses the threshold method, which selects one gap sensor among two gap sensors installed on the magnet to read the gap between magnet and guide rail. But the threshold method with a wide bandwidth makes the discontinuous air-gap signal at the rail joints because of the offset in air gap sensors and/or the step-wise rail joins. Further more, in the case of the one with a narrow bend-width, it makes Maglev system unstable because of frequent alternation. In this paper, a new method using fuzzy rule to reduce air-gap disturbances proposed to improve the stability of Maglev system. It treats the air-gap signal from dual gap sensors effectively to make continuous signal without air gap disturbance. Simulation and experiment results proved that the proposed scheme was effective to reduce air-gap disturbance from dual gap sensors in rail joints.

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Air-Gap Signal Treatment based Fuzzy Rule in Rail-Joint (Rail-Joint에서 퍼지룰을 기반으로하는 공극신호처리법)

  • Sung, H.K.;Jho, J.M.;Lee, J.M.;Bae, D.K.;Kim, B.S.;Shin, B.C.
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.1071-1072
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    • 2006
  • Maglev using EMS becomes unstable by unexpected big air-gap disturbance. The main causes of the unexpected air-gap disturbance are step-wise rail joint and large distance between rail splices. For the stable operation of the Maglev, the conventional system uses the threshold method, which selects one gap sensor among two gap sensors installed on the magnet to read the gap between magnet and guide rail. But the threshold method with a wide bandwidth makes the discontinuous air-gap signal at the rail joints because of the offset in air gap sensors and/or the step-wise rail joins. Further more, in the case of the one with a narrow bend-width, it makes Maglev system unstable because of frequent alternation. In this paper, a new method using fuzzy rule to reduce air-gap disturbances proposed to improve the stability of Maglev system. It treats the air-gap signal from dual gap sensors effectively to make continuous signal without air gap disturbance. Simulation and experiment results proved that the proposed scheme was effective to reduce air-gap disturbance from dual gap sensors in rail joints.

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CoMP Transmission for Safeguarding Dense Heterogeneous Networks with Imperfect CSI

  • XU, Yunjia;HUANG, Kaizhi;HU, Xin;ZOU, Yi;CHEN, Yajun;JIANG, Wenyu
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.13 no.1
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    • pp.110-132
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    • 2019
  • To ensure reliable and secure communication in heterogeneous cellular network (HCN) with imperfect channel state information (CSI), we proposed a coordinated multipoint (CoMP) transmission scheme based on dual-threshold optimization, in which only base stations (BSs) with good channel conditions are selected for transmission. First, we present a candidate BSs formation policy to increase access efficiency, which provides a candidate region of serving BSs. Then, we design a CoMP networking strategy to select serving BSs from the set of candidate BSs, which degrades the influence of channel estimation errors and guarantees qualities of communication links. Finally, we analyze the performance of the proposed scheme, and present a dual-threshold optimization model to further support the performance. Numerical results are presented to verify our theoretical analysis, which draw a conclusion that the CoMP transmission scheme can ensure reliable and secure communication in dense HCNs with imperfect CSI.

Research Trends for Improvement of NBIS Instability in Amorphous In-Ga-ZnO Based Thin-Film Transistors (비정질 인듐-갈륨-아연 산화물 기반 박막 트랜지스터의 NBIS 불안정성 개선을 위한 연구동향)

  • Yoon, Geonju;Park, Jinsu;Kim, Jaemin;Cho, Jaehyun;Bae, Sangwoo;Kim, Jinseok;Kim, Hyun-Hoo;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.371-375
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    • 2019
  • Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

Dual-hop Routing Protocol for Improvement of Energy Consumption in Layered WSN Sensor Field

  • Song, Young-Il;LEE, WooSuk;Kwon, Oh Seok;Jung, KyeDong;Lee, Jong-Yong
    • International Journal of Advanced Culture Technology
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    • v.4 no.2
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    • pp.27-33
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    • 2016
  • This paper proposes to increase the node energy efficiency, which rapidly drops during the transmission of L-TEEN (Layered Threshold sensitive Energy Efficient sensor Network protocol), using the method of DL-TEEN (Dual-hop Layered TEEN). By introducing dual-hop method in the data transmission, the proposed single-hop method for short-range transmission and multi-hop transmission method between the cluster heads for remote transmission was introduce. By introducing a partial multi-hop method in the data transmission, a single-hop method for short range transmission method between the cluster heads for remote transmission was introduces. In the proposed DL-TEEN, the energy consumption of cluster head for remote transmission reduces and increases the energy efficiency of sensor node by reducing the transmission distance and simplifying the transmission routine for short-range transmission. As compared the general L-TEEN, it was adapted to a wider sensor field.

Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode (Al:Au 음극층을 이용한 양면발광(dual emission) 유기 EL 소자의 Al 두께별 특성 평가)

  • Lee, Su-Hwan;Kim, Dal-Ho;Yang, Hee-Doo;Kim, Ji-Heon;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.1
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    • pp.47-51
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    • 2008
  • The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

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High Affinity Pharmacological Profiling of Dual Inhibitors Targeting RET and VEGFR2 in Inhibition of Kinase and Angiogeneis Events in Medullary Thyroid Carcinoma

  • Dunna, Nageswara Rao;Kandula, Venkatesh;Girdhar, Amandeep;Pudutha, Amareshwari;Hussain, Tajamul;Bandaru, Srinivas;Nayarisseri, Anuraj
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.16
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    • pp.7089-7095
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    • 2015
  • Clinical evidence shows that dual inhibition of kinases as well angiogenesis provides ideal therapeutic option in the treatment of medullary thyroid carcinoma (MTC) than inhibiting either of these with the events separately. Although treatment with dual inhibitors has shown good clinical responses in patients with MTC, it has been associated with serious side effects. Some inhibitors are active agents for both angiogenesis or kinase activity. Owing to narrow therapeutic window of established inhibitors, the present study aims to identify high affinity dual inhibitors targeting RET and VEGFR2 respectively for kinase and angiogenesis activity. Established inhibitors like Vandetanib, Cabozantinib, Motesanib, PP121, RAF265 and Sunitinib served as query parent compounds for identification of structurally similar compounds by Tanimoto-based similarity searching with a threshold of 95% against the PubChem database. All the parent inhibitors and respective similar compounds were docked against RET and VEGFR2 in order to retrieve high affinity compounds with these two proteins. AGN-PC-0CUK9P PubCID: 59320403 a compound related to PPI21 showed almost equal affinity for RET and VEGFR2 and unlike other screened compounds with no apparent bias for either of the receptors. Further, AGNPC- 0CUK9P demonstrated appreciable interaction with both RET and VEGFR2 and superior kinase activity in addition to showed optimal ADMET properties and pharmacophore features. From our in silico investigation we suggest AGN-PC-0CUK9P as a superior dual inhibitor targeting RET and VEGFR2 with high efficacy which should be proposed for pharmacodynamic and pharmacokinetic studies for improved treatment of MTC.

Analysis of Electrical Characteristics of Dual Gate IGBT for Electrical Vehicle (전기자동차용 이중 게이트 구조를 갖는 전력 IGBT소자의 전기적인 특성 분석)

  • Kang, Ey Goo
    • Journal of IKEEE
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    • v.21 no.1
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    • pp.1-6
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    • 2017
  • IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

Desing and fabrication of GaAs prescalar IC for frequency synthesizers (주파수 합성기용 GaAs prescalar IC 설계 및 제작)

  • 윤경식;이운진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.1059-1067
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    • 1996
  • A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.

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