• Title/Summary/Keyword: dual plasma

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Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices (차세대 메모리 디바이스Gap-Fill 공정 위한 공간 분할 PE-ALD개발 및 공정 설계)

  • Lee, Baek-Ju;Hwang, Jae-Soon;Seo, Dong-Won;Choi, Jae-Wook
    • Journal of the Korean institute of surface engineering
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    • v.53 no.3
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    • pp.124-129
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    • 2020
  • This study is for the development of high temperature ALD SiO2 film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N2and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

Impact of Plasma Induced Degradation on Low Temperature Poly-Si CMOS TFTs during Etching Process

  • Chang, Jiun-Jye;Chen, Chih-Chiang;Chuang, Ching-Sang;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.519-522
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    • 2002
  • In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

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Plasma Treatment of Carbon Nanotubes and Interfacial Evaluation of CNT-Phenolic Composites by Acoustic Emission and Dual Matrix Techniques (음향 방출과 이중 기지 기술을 이용한 탄소나노튜브의 플라즈마 처리 효과에 따른 탄소나노튜브-페놀 복합재료의 계면특성 평가)

  • Wang, Zuo-Jia;Kwon, Dong-Jun;Gu, Ga-Young;Lee, Woo-Il;Park, Jong-Kyoo;Park, Joung-Man
    • Composites Research
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    • v.25 no.3
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    • pp.76-81
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    • 2012
  • Atmospheric pressure plasma treatment on carbon nanotube (CNT) surfaces was performed to modify reinforcement effect and interfacial adhesion of carbon fiber reinforced CNT-phenolic composites. The surface changes occurring on CNT treated with plasma were analyzed by using Fourier transform infrared spectroscope (FT-IR). The significant improvement of wettability on CNT was confirmed by static contact angle test after plasma treatment. Such plasma treatment resulted in a decrease in the advancing contact angle from $118^{\circ}$ to $60^{\circ}$. The interfacial adhesion between carbon fiber and CNT-phenolic composites increased by plasma treatment based on apparent modulus test results during quasi-static tensile strength. Furthermore, the proposed database offers valuable knowledge for evaluating interfacial shear strength (IFSS).

Lifetime Enhancement of Aerospace Components Using a Dual Nitrogen Plasma Immersion ion Implantation Process

  • Honghui Tong;Qinchuan Chen;Shen, Li-Lu;Yanfeng Huo;Ke Wang;Tanmin Feng;Lilan Mu;Jun Zha;Paul K. Chu
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.62-66
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    • 2002
  • Hydraulic pumps are used to control the landing wheels of aircrafts, and their proper operation is vital to plane safety It is well hewn that adhesive wear failure is a major cause of pump failure. A dual nitrogen plasma immersion ion implantation process calling for the implantation of nitrogen at two different energies and doses has been developed to enhance the surface properties of the disks in the pumps. The procedures meet the strict temperature requirement of <200$^{\circ}C$, and after the treatment, the working lifetime of the pumps increases by more than a factor of two. This experimental protocol has been adopted by the hydraulic pump factory as a standard manufacturing procedure.

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Fabrication of Metallic Glass/metallic Glass Composites by Spark Plasma Sintering (방전플라즈마 소결법에 의한 비정질/비정질 복합재의 제조)

  • Lee, Jin-Kyu
    • Journal of Powder Materials
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    • v.14 no.6
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    • pp.405-409
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    • 2007
  • The Cu-based bulk metallic glass (BMG) composites containing Zr-based metallic glass phase have been consolidated by spark plasma sintering using the mixture of Cu-based and Zr-based metallic glass powders in their overlapped supercooled liquid region. The Zr-based metallic glass phases are well distributed homogeneously in the Cu-based metallic glass matrix after consolidation process. The successful consolidation of BMG composites with dual amorphous phases was corresponding to the sound viscous flow of the two kinds of metallic glass powders in their overlapped supercooled liquid region.

Study of plasma induced charging damage and febrication of$0.18\mu\textrm{m}$dual polysilicon gate using dry etch (건식각을 이용한 $0.18\mu\textrm{m}$ dual polysilicon gate 형성 및 plasma damage 특성 평가)

  • 채수두;유경진;김동석;한석빈;하재희;박진원
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.490-495
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    • 1999
  • In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

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A new Areal Selective Dimming Method of Mercury-free Flat Fluorescent Lamps for LCD Backlighting

  • Jung, Jae-Chul;Seo, In-Woo;Oh, Byung-Joo;Kim, Hyuck;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1189-1192
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    • 2008
  • A new mercury-free flat fluorescent lamp with a single cell having dimension 2.2inches across the diagonal, had been developed which shows a wide, stable operating voltage margin, high luminance and luminous efficacy by adopting the bipolar pulse drive scheme. In this paper, the single cell is expanded into a multi-structured configuration to realize a 32inch sized panel across the diagonal by a simple repetition of the single cells. A driving scheme is proposed for a 2-bit areal selective dimming using dual auxiliary electrodes and bipolar drive scheme.

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