• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2286-2292
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• 2011

In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Journal of Satellite, Information and Communications
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• v.11 no.2
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• pp.55-59
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• 2016

Conventional RF energy harvesting systems can harvest energy and decode information from same source as an Hybirid-AP (H-AP). However, harvesting efficiency is seriously dependent on distance between users and H-AP. Therefore, in this paper, we proposed a transmission model for RF harvesting consisting of information and power source separately called Decoupled RF Energy harvesting networks. Main purpose of this paper is to maximize energy efficiency under various constraints of transmit power from H-AP and power beacon (PB), minimum quality of service and quality of harvested power of each users. To measure proposed model's performance, we proposed optimal time scheduling algorithms for energy efficiency (EE) maximization using Lagrangian dual decomposition theory that locally maximizes the EE by obtaining suboptimal values of three arguments : transmit power of H-AP, transmit power of PB, frame splitting factor. Experiment results show that the proposed energy-efficient algorithms converge within a few iterations with its optimality and greatly improve the EE compared to that of baseline schemes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2008.05a
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• Journal of IKEEE
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• v.20 no.4
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• pp.385-391
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• 2016

We demonstrated experimentally a variable optical frequency comb source using a cascaded dual parallel Mach Zehnder modulator (DPMZM) and a phase modulator (PM). With this simple configuration and applying low drive voltages, we generated variable comb source composed of spectral lines 3, 5, 7, 9 and 11 with 10-GHz frequency spacing, also generated 2 and 3 spectral lines with 20 GHz frequency spacing. The generated comb source maintains high spectral coherence across the entire bandwidth with good spectral flatness (within 1-dB for 2, 3, 5, 7 comb lines, within 2-dB for 9-comb lines and within 3-dB for 11 comb lines). The flat and variable comb source is mainly achieved by manipulating 6 operating parameters of DPMZM, setting RF amplifier gain, connected at phase modulator and phase shifters. Hence the method is simple and offers great flexibility in achieving flat and variable comb spectrum, which is experimentally demonstrated. This brings advantages of power efficiency due to low driving voltages, simplicity and cost effectiveness to the system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.486-486
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• 2012

반도체 식각 공정에서 이온의 플럭스와 충돌 에너지를 각각 조절하고자 Dual frequency RF source가 사용된다. 듀얼 freuqnecy RF가 인가된 Capacitively coupled plasma (CCP) 의 경우, 기판에 걸린 Low freuqency (LF) RF 소스에 의하여 이온의 에너지를 조절하고, High frequency (HF) 소스를 조절하여 이온의 플럭스를 조절하는 것이 일반적이다. 그러나 LF의 세기가 증가함에 따라서, 플라즈마의 밀도가 오히려 감소하는 문제점이 있었다. 이 경우, 약한 자장을 플라즈마에 걸어줌으로써 밀도가 감소되는 문제를 해결할 수 있다고 알려져 왔다. Inductively coupled plasma (ICP) 에서는 HF를 안테나에 가하여 이온의 플럭스를 조절하고, LF를 기판에 가하여 이온의 충돌 에너지를 조절하는 것이 일반적인데, 위와 동일한 문제가 이 경우에도 발생하는 것을 확인 하였다. CCP와 마찬가지로, 바이어스에 걸린 파워의 세기가 증가함에 따라서 플라즈마의 밀도가 감소하고 전자의 온도가 증가하는 현상을 확인하였다. 또한 이때에도, 약한 자장을 걸어줌으로써 플라즈마의 밀도가 감소하지 않고 유지될 수 있으며, 전자의 온도 또한 유지될 수 있음을 발견하였다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.11
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• pp.4623-4643
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• 2015

This paper considers physical-layer security protocols in multicast cognitive radio (CR) networks. In particular, we propose dual-hop cooperative decode-and-forward (DF) and randomize-and-forward (RF) schemes using partial relay selection method to enhance secrecy performance for secondary networks. In the DF protocol, the secondary relay would use same codebook with the secondary source to forward the source's signals to the secondary destination. Hence, the secondary eavesdropper can employ either maximal-ratio combining (MRC) or selection combining (SC) to combine signals received from the source and the selected relay. In RF protocol, different codebooks are used by the source and the relay to forward the source message secretly. For each scheme, we derive exact and asymptotic closed-form expressions of secrecy outage probability (SOP), non-zero secrecy capacity probability (NzSCP) in both independent and identically distributed (i.i.d.) and independent but non-identically distributed (i.n.i.d.) networks. Moreover, we also give a unified formula in an integral form for average secrecy capacity (ASC). Finally, our derivations are then validated by Monte-Carlo simulations.