• Journal of IKEEE
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• v.16 no.4
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• pp.283-289
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• 2012

In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.229-232
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• 2000

In this study, An active band grass filter for 2.14GHz have been designed with MMIC using negative resistance circuit. The negative resistance element was realized with a common-drain FET with series inductive feedback. The designed active filter showed an insertion loss of 0dB at 2.14GHz and a 3-dB bandwidth of 125MHz.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1555-1558
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• 2008

In this paper, result of whole test, When the Transfer Distance is increasing, Strength of Backfilling Material of NATM Composite lining Tunnel due to increasing Gravity was increased, but that is higher the Air Flotation than increasing Strength. So, That was predicted a drop of Permeability. And Performing the placing Lightweight Foamed Mortar, we think that it's performance in drain material was lost. Therefore We conclude that Proper Transfer Distance that taking Permeability through minimizing of Air Flotation Loss and getting the Need Strength is 50m.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.81-82
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• 2007

This paper presents a WLAN band active monopole antenna which is made of a CPW-fed monopole antenna and a low noise amplifier implemented on single-layer low-temperature co-fired ceramic (LTCC) substrate. Planar active antenna measure return loss and power test. (drain voltage = 4V, gate voltage = -0.6V). The bandwidth, is 540MHz, return loss is -38dB.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.194-199
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• 1997

When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.5
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• pp.356-367
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• 2001

A numerical analysis on branch type sparger in drain tank for depressurization is performed to investigate the flow characteristics due to the change of design factor. As the result of this study, sparger\\`s flow resistance coefficient(K) is 3.53 at the present design condition when engineering margin for surface roughness is considered as 20%, and flow ratio into branch pipe ($Q_s/Q_i$) is 0.41. The correlation for calculating flow resistance coefficients as design factor is presented. Flow resistance coefficient is increased as section area ratio of branch pipe for main pipe and outlet nozzle diameter of main pipe decreasing, but the effects of branch angle and inlet flow rate of main pipe are small. As the change rate of ($Q_s/Q_i$)becomes larger, the change rate of flow resistance coefficient increases. The rate of pressure loss has the largest change as section area ratio changing. The condition of maximum flow resistance in sparger is when the outlet nozzle diameter ratio of main pipe ($D_e/D_i$) is 0.167, the section area ratio ($A_s/A_i$) is 0.1 and the branch angle ($\alpha$) is 55^{\circ}$.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1912-1919
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• 2018

The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

• Journal of Korea Water Resources Association
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• v.55 no.spc1
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• pp.1251-1260
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• 2022

Recently, due to the deterioration of watermains and the detachment of scale which is accumulated on the watermain surface, water quality accidents in a water supply network occur frequently. As scale accumulated on watermains is stabilized, it may not cause water quality accidents under the normal operating condition. However, due to water hammer or transient flow caused by the abrupt velocity and/or direction of flow change, it can be detached from the watermain surface resulting in water quality accidents. To prevent these kinds of water quality accidents, it is required to remove scale by watermain cleaning regularly. Many researches about flushing which is the most popular water cleaning method are focused on the desirable velocity criteria and the cleaning condition to accomplish the effect of flushing whereas less amount of research effort is given to develop a method to consider whether the desirable velocity for flushing can be obtained before flushing is performed. During flushing, the major and minor headloss is occurred when flushing water flows through a hydrant or drain valve. These headloss may slow down the velocity of flushing water so that it can reduce the flushing effect. Thus, in this study, we suggest a method to simulate the flow velocity of flushing water using "MinorLoss Coefficient" and "Emitter Coefficient" in EPANET. The suggested method is applied to a sample network and the water supply network of "A" city in Korea to compare the flushing effect between "flushing through a hydrant" and "flushing through a drain valve". In case of "flushing through a hydrant", if the hydraulic condition ocurring from a watermain pipe connecting to the inlet pipe of a hydrant to the outlet of a hydrant is not considered, the actual flowrate and velocity of a flow is less than the simulated flowrate and velocity of a flow. In case of "flushing through a drain valve", the flushing velocity and flowrate can be easily simulated and the difference between the simulated and the actual velocity and flowrate is not significant. Also, "flushing through a drain valve" is very effective to flushing a long-length pipe section because of its efficiency to obtain the flushing velocity. However, the number and location of a drain valve is limited compared to a hydrant so that "flushing through a drain valve" has a limited application in the field. For this reason, the engineer should consider various field conditions to come up with a proper flushing plan.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.857-860
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• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.