• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.64-72
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• 2002

The use of linear DC motor is spreaded according to industrial development. This study was objected to study the analysis of double side excitation LDM with moving magnet type. In this LDM structure, the mover made use of permanent magnet with six pieces so as to large thrust, the stator was bedded for the multi separated type winding to repress the i개n saturation. Also, double side excitation winding is suppressed to thrust ripple with stratification to zigzag type and designed to production for static thrust. Then it is important to ratio of permanent magnet to winding width at multi separate, this paper analyzed to separate to three pieces of 1:1, 1:0.84 and 1:0.5 with width ratio. The analysis method calculated the parameter useful for permeance and magnetic resistance more than FEM of complicated numerical value analysis. Through manufactured experiment system, measurement result of thrust was almost acquired to constant thrust for all displacement.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.813-817
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• 1987

High value sheet resistance (Rs' 1K-33K\ulcorner/) polysilicon resistors were fabricated using double ion implantation with boron as the major dopant and phosphorus compensation. It is observed that Rs sensitivity to the net doping concentration is decreased by one order of magnitude compared to the conventional (boron implanted)polysilicon resistors. The temperature co-efficient of resistance (TCR) measured between 25\ulcorner and 125\ulcorner shows equivalent values to those of non-compensated resistors for the same Rs. A qualitative electrical conductiion mechanism for compensated polysilicon resistor is proposed, based on the existing grain boundary charge trapping theory.

• Journal of the Society of Naval Architects of Korea
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• v.47 no.3
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• pp.398-409
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• 2010

This paper considers the numerical computation of added resistance on ships in the presence of incident waves. As a method of solution, a higher-order Rankine panel method is applied in time domain. The added resistance is evaluated by integrating the second-order pressure on the body surface. Computational results are validated by comparing with experimental data and other computational results on a hemi-sphere, a barge, Wigley hull models, and Series 60 hull, showing very fair agreements. The study is extended to the comparison between Neumann-Kelvin and double-body linearization approaches, and their differences are discussed.

• Korean Journal of Microbiology
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• v.26 no.2
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• pp.113-121
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• 1988

Ozone, an atmospheric pollutant, can damage similar UV and X-rays DNA and its components. It is possible then that the KNA damage produced by this gas are similar, to some extent, to those of radiations and that they could be repaired by the same DNA repair mechanisms. It has been observed in Escherichia coli that radiosensitive strains such as lex A, rec A and pol A, all deficient to some extent for DNA repair, are more sensitive to ozone than a wild type strain. We have thendetermined the ozone resistance and host-cell reactivation of ozone-damaged T3 phages for the E. coli double mutants pol A, lex A, uvr B, lex A, uvr A, rec A and rec A lox A. According to the results, the DNA polymerase 1 plays a key role in ozone resistance and Type 11 mechanism and/or shory patch excision repair are the most important for it. The interactions between the different DNA repair mechanisms are secondary. There is a strong correlation between ozone resistance and the capacity to reactivate T3 phages damaged by ozone.

• Korean Journal Plant Pathology
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• v.14 no.4
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• pp.367-370
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• 1998

Monilina fructicola, the brown rot fungus of stone fruits, was isolated from overwintering mummies and peduncles on peach trees from February to March, 1998. The resistant population of these isolates to benzimidazole (benomyl, carbendazim and thiophanate-methyl) and dicarboximide (iprodione, vinclozolin and procymidone) was examined. Among 417 isolates, the incidence of isolates resistant to benomyl, carbendazim, and thiophanate-methyl were 45 (10.8%), 47 (11.3%), and 46 (11.0%), respectively. Forty two (10.0%) isolates showed cross-resistance to benzimidazole fungicides. On the other hand, the resistant isolates against iprodione, vinclozolin and procymidone were 186 (44.6%), 1 (0.2%) and 150 (36.0%), respectively. Among the isolates, 116 (27.8%) showed cross-resistance to iprodione and procymidone. Moreover, 27 (6.5%) of 417 isolates showed double-resistance to both benzimidazole (benomyl) and dicarboximide (iprodione).

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.146-147
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• 2007

A universal four-point contact measurement method, has an advantage of non-existence of contact resistance, is demonstrated by the experiments with carbon nanotubes and ZnO nanowire. Ti/Au and Pt are tried to compare the influence of contact resistance between two different metals. These metals are selected to make Ohmic contact and Schottky contact originated from their different work functions. For precise experiments, Ti/Au and Pt are separately evaporated to form double 'four-point contact electrodes' on CNTs or ZnO, and the voltage-current characteristics are measured. This method can be applied to universal resistivity measurement for nanotubes and nanowires.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.251-254
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• 2002

The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.