• Journal of Korea Water Resources Association
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• v.47 no.11
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• pp.1087-1094
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• 2014

Saltwater pumping method can be used to mitigate saltwater intrusion in coastal aquifers. However, the saltwater pumping well may discharge large freshwater along with saltwater, thereby wasting precious resources. A double negative barrier was proposed: an inland well to capture freshwater and a saltwater well near the coastline to pump saltwater. A previous study anaylzed effects of double negative barriers in dispersion-dominated coastal aquifers and determined the critical pumping rate at the saltwater well which minimized the saltwater ratio at the freshwater well. However, the study resulted in 1~15% of saltwater ratios, which were too high, for example, for drinking water standards. This study analyzed cases that were considered in the previous study, but for advection-dominated cases, and found that freshwater with sufficiently low saltwater ratios could be developed at the freshwater well. In addition, for optimal groundwater management of a watershed not only the minimum saltwater ratio at the freshwater well but also the least freshwater wasted at the saltwater well must be pursued.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.318-325
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• 2000

Dynamic behaviors of saturated-fatty acids $C_{16}$, $C_{18}$, $C_{20}$ and 8A5H with azobenzene were measured by displacement current method when the molecules are stimulated by pressure light and heat. When a barrier was compressed I-A, $\pi$-A isotherms of $C_{16}$, $C_{18}$, and $C_{20}$ were similar to each other but the displacement current of $C_{20}$ which has a long alkyl chain was relatively low. 8A5H showed the form of double liquid films and had a reversible reaction when a barrier was compressed and then expanded. When the molecules of 8A5H were stimulated by 365[nm] light the positive currents which were generated by the structural changes from trans to cis were measured. But the negative currents of the structural changes from cis to trans by 450[nm] light were too weak to detect. When the temperature of the water subphase was increased the surface pressures of the monolayers were increased early because of the thermal activations of the molecules and the double liquid films of 8A5H were disappeared above 40[$^{\circ}C$]EX>].

• Maxillofacial Plastic and Reconstructive Surgery
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• v.31 no.1
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• pp.86-91
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• 2009

The success of implants essentially depends on a sufficient volume of healthy bone at the recipient site during implant placement. In patients who have the severe alveolar bone resorption or pneumatized maxillary sinus, it should be performed that bone regeneration procedure before implant placement. Development of barrier membrane makes it possible that predictable result of alveolar bone reconstruction. Many kind of materials used for barrier membrane technique are introduced, non-absorbable or absorbable membranes. But, when operation site was ruptured with membrane exposure, bacterias can be grow up at the bone graft site. Then morphology and migration of fibroblast will be changed. It works as a negative factor on healing process of bone graft site. In oral and maxillofacial department of Chonbuk national university dental hospital, we use variable suture technique like as subgingival suture, vertical mattress suture, simple interrupted suture, if need, tenting suture after GBR or block bone graft. Within these suture technique, wound healing was excellent without complication, so now we take a report of suture technique in reconstruction of alveolar bone surgery.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.340-341
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• 2012

In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.170-170
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• 2009

From the analysis of current density-luminance-voltage characteristics of the double layered device in ITO/N,N'-diphenyl-N-N'bis(3-methylphenyl)-1,1'biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al, we divided the conductive mechanism by four region according to applied voltage. We have obtained a coefficient of ${\beta}_{ST}$ in schottky region (I) is $4.14{\times}10^{-24}$ at the electric field of $3.2{\times}10^5$ V/cm, a slope in negative resistance region (II) appears negative properties decreasing the current density J for proportional in -1.58 square at a electric field of $7.3{\times}10^5$ V/cm. A coefficient of ${\beta}_{PF}$ in Poole-Frenkel region (III) is $8.28{\times}10^{-24}$ at the electric field of $8.4{\times}10^5$ V/cm, it was confirm어 that ${\beta}_{PF}$ is agrees with a value that relates with ${\beta}_{ST}$ such as ${\beta}_{PF}=2{\beta}_{ST}$ as the ${\beta}_{PF}$ and 2 ${\beta}_{ST}$ satisfied a theoretical prediction. And it was obtained a potential barrier of ${\Phi}_{FN}$ in Fower-Nordheim region(IV) is 0.3 eV at the electric field of $11.2{\times}10^5$ V/cm.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.227-230
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• 1990

The addition of titanium has come to produce an increase in the conductivity of ${\alpha}-Fe_2O_3$ and has been shown NTC ( negative temperature coefficient ) characteristics. Titanium enters the ${\alpha}-Fe_2O_3$ lattice substitutionally as $Ti^{4+}$,thus producing an $Fe^{2+}$ and maintaining the average charge per cation at three. Thus the $Fe^{2+}$ acts as a donor center with respect to the surrounding $Fe^{3+}$ ions. The sintering temperature, compacting pressure and sintering tire have an effect on the electrical properties. C-V and other properties have been measured on polycrystalline samples of ${\alpha}-Fe_2O_3$ containing small deviations from stoichiometry and small amounts of added Titanium. This measurment was made in the course of an investigation of the NTC mechanism in oxides whose cations have a partially filled d-level. C-V and frequency properties have been applied to the measurement of the trap barrier properties at the grain boundary. The double Schottky barrier at the grain boundary is the major cause of the NTC mechanism in NTC thermistor of ${\alpha}-Fe_2O_3$ containing N-type impurity.

• Journal of Korea Trade
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• v.25 no.6
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• pp.126-142
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• 2021

Purpose - This study discusses the effects of human capital in the formation of GVC linkages. We also investigate GVC intensity between Korea and ASEAN. Design/methodology - To solve the doubling-counting problem in evaluating comparative advantage, RCA has been re-computed using domestic value-added (henceforth RCA_VA) at the country-sector level instead of value of trade. The impact of human capital on GVC intensity was empirically analyzed by establishing a panel data set with four industries (ISIC Rev. 4) in eight ASEAN countries from 2005 to 2015 from OECD-TiVA and WDI. Findings - The empirical results show that human capital has a negative effect on GVC intensity in the agriculture and manufacture industries, while it has a positive effect in the service and information industries. The results do not mean that low human capital is a barrier and inefficient to GVC linkages. Low Value-added activities may be more profitable to some emerging countries. These findings suggest that it is important to accurately identify the competitive elements to increase gains from trade under the GVC. Also, it shows that comparative advantages can be misled by an RCA index evaluated in trade volume under the GVC. Originality/value - This study highlights the importance of human capital as a factor for the efficient formation of Global Value Chain (GVC). This study has different from the literature in analyzing the role of human capital in formation of linkage of the GVC. And we clarify the changing patterns of trade by removing the double-counting problem under the GVC.

• Journal of Microbiology and Biotechnology
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• v.27 no.2
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• pp.335-341
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• 2017

The complexity of the bacterial recombination system is a barrier for the construction of bacterial mutants for the further functional investigation of specific genes. Several protocols have been developed to inactivate genes from the genus Pseudomonas. Those protocols are complicated and time-consuming and mostly do not enable easy construction of multiple knock-ins/outs. The current study describes a single and double crossover-recombination system using an optimized vector-free allele-exchange protocol for gene disruption and gene replacement in a single species of the family Pseudomonadaceae. The protocol is based on self-ligation (circularization) for the DNA cassette which has been obtained by overlapping polymerase chain reaction (Fusion-PCR), and carries an antibiotic resistance cassette flanked by homologous internal regions of the target locus. To establish the reproducibility of the approach, three different chromosomal genes (ncRNA31, rpoN, rpoS) were knocked-out from the root-associative bacterium Pseudomonas stutzeri A1501. The results showed that the P. stutzeri A1501 mutants, which are free of any plasmid backbone, could be obtained via a single or double crossover recombination. In order to optimize this protocol, three key factors that were found to have great effect on the efficiency of the homologous recombination were further investigated. Moreover, the modified protocol does not require further cloning steps, and it enables the construction of multiple gene knock-in/out mutants sequentially. This work provides a simple and rapid mutagenesis strategy for genome editing in P. stutzeri, which may also be applicable for other gram-negative bacteria.