• Journal of the Korean institute of surface engineering
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• v.54 no.1
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• pp.30-36
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• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3488-3490
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• 2013

• Macromolecular Research
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• v.13 no.2
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• pp.156-161
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• 2005

The thermal transitions of a nylon 6/layered silicate nanocomposite were studied by differential scanning calorimetry and in-situ synchrotron X-ray diffraction. The drawn film of the nylon 6/layered silicate nanocomposite typically showed three endotherms in the DSC thermogram; a very broad endotherm at $\sim120^{\circ}C(T_{1})$, a double-melting endotherm at $\sim215^{\circ}C(T_{2})$, and a high temperature endotherm at $\sim240^{\circ}C(T_{3})$. The drawn film of the nylon 6/ layered silicate nanocomposite was comprised of a mixture of the $\alpha and \gamma$ forms, with $the \alpha form$ being generated by drawing the pressed film having $the \gamma form$. The melting and crystallization of the crystals were observed at the above thermal transitions during the heating experiment performed at the Pohang X-ray synchrotron radiation source (4C2). The newly generated form was meta-stable and melted $at {\sim}T_{1}$. The double-melting $at {\sim}T_{2}$ was due to the exothermic crystallization of $the \alpha form$ during the main endothermic melting of $the \gamma form$. $The \alpha form$ crystallized $at {\sim}T_{2}$ and melted $at {\sim}T_{3}$.

• Journal of Information Display
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• v.13 no.2
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• pp.61-66
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• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.26 no.1
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• pp.239-260
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• 2000

The raw materials requiring new technology have been introduced to the market as highly functional cosmetics have been popularized recently. The doublesphere which is the new capsulation is thus born. The deublesphere is double-layered capsulation of which the primary film is the nanocapsulation of liposome and the secondary film is the visible capsulation. The main component of the primary film is lecithin and that of the secondary film is alginlcarrageenanslagarfcellulose. The doublesphere is characterized by that it is possible to keep active beautifying components stable and to improve the moisturizing effect, penetration power into the skin, roughness of the skin, etc. in view of its efficacy and effects since it is double-layered capsulation. The doublesphere-retinol is made in order to measure the stability, efficacy, and effects in the present study.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1129-1132
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• 1995

In the preparation of the layered $BaTiO_3$ thin films with high performance, the new stacking method using the continuous cooling of the substrate was introduced. Amorphous/polycrystalline $BaTiO_3$ layered structure was confirmed by SEM and index of refraction. The layered $BaTiO_3$ thin films formed by the new stacking method showed such a high dielectric constant that the layered structure could not be explained by a stacking structure of the two defined layers but could only be explained by multi-layered structure, i.e. amorphous/micro crystalline/polycrystalline structure. The layered $BaTiO_3$ thin film with a thickness of 240 nm showed higher capacitance per unit area and breakdown strength than the double layered $BaTiO_3$ thin film prepared by the conventional stacking method. And well defined ferroelectric hysteresis leer was observed in the layered $BaTiO_3$ thin film with a thickness of 200 nm.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.260-263
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• 2011

GZO/ITO double layered films were deposited on unheated non-alkali glass substrates by RF magnetron sputtering using an ITO ($SnO_2$: 10 wt%) and GZO($Ga_2O_3$: 5.57 wt%) ceramic targets, respectively. The electrical resistivity of GZO/ITO films depends on the thickness ratio between the GZO film and ITO film. With increasing ITO film thickness, the resistivity of GZO/ITO films decreased which due to large increase in the Hall mobility. Also, the crystallinity of GZO/ITO film was improved with an increase in ITO thickness which was evaluated by X-ray diffraction. The average transmittance of the films was more than 85% in the visible region, which is slightly higher than ITO single layer films.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.3
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• pp.118-126
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• 2002

TiCN thin films were deposited on tool steels at $510^{\circ}C$ by PECVD from a $TiCl_4+N_2+CH_4+H_2+Ar$ gaseous mixture. The microstructures and preferred orientation were investigated. The micro-scratch tests were performed using a system equipped with an acoustic emission sensor. Critical loads were determined to evaluate the adhesion of TiCN to substrate. The influences of the microstructures of substrates, double layered coatings, and coatings after nitriding(duplex coating) were investigated. The experimental results showed that the microstructures of substrates and double layered coating did not affect the critical loads considerably. By the duplex coating, critical loads were not always increased. In some cases, duplex coatings decreased critical loads significantly despite of absence of black layer. In this study, we tried to relate the results of scratch test to the residual stress analysis. Nitriding before the coating reduces the tensile residual stress in the film, which gives rise to low critical load in scratch test.