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Effect of ITO Layer on Electrical and Optical Properties of GZO/ITO Double-layered TCO Films Deposited by RF Magnetron Sputtering for Application to Solar Cells

RF 마그네트론 스퍼터링법으로 증착한 태양전지용 GZO/ITO 투명전도성 박막의 물성에 미치는 ITO층의 영향

  • Chung, Ah-Ro-Mi (Department of Materials Science and Engineering, Pusan National University) ;
  • Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
  • Received : 2011.11.17
  • Accepted : 2011.12.30
  • Published : 2011.12.31

Abstract

GZO/ITO double layered films were deposited on unheated non-alkali glass substrates by RF magnetron sputtering using an ITO ($SnO_2$: 10 wt%) and GZO($Ga_2O_3$: 5.57 wt%) ceramic targets, respectively. The electrical resistivity of GZO/ITO films depends on the thickness ratio between the GZO film and ITO film. With increasing ITO film thickness, the resistivity of GZO/ITO films decreased which due to large increase in the Hall mobility. Also, the crystallinity of GZO/ITO film was improved with an increase in ITO thickness which was evaluated by X-ray diffraction. The average transmittance of the films was more than 85% in the visible region, which is slightly higher than ITO single layer films.

Keywords

References

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