• Transactions of Materials Processing
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• 제31권1호
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• pp.29-38
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• 2022

Recently, the composite material market is gradually growing. Various composite forming processes have been developed in order to reduce the production cost of the composite material. Unlike the conventional forming process, the microwave composite forming process has the advantage of reducing the processing time because the composite material is heated directly or indirectly at the same time. Due to this advantage, in this study, a double cantilever beam test was conducted with specimens manufactured by the microwave composite forming process. The purpose of this study was to compare mode-I energy release rate for specimens manufactured by prepreg compression forming and microwave composite forming processes. First, a microwave oven was proposed to conduct the microwave composite forming process. Double cantilever beam specimens were manufactured. After that, the double cantilever beam test was conducted to obtain the mode-I energy release rate. Mode-I energy release rates of specimens manufactured by the microwave composite forming and prepreg compression forming processes were then compared. As a result, mode-I energy release rates of specimens fabricated by the microwave composite forming process were similar to those fabricated with the prepreg compression forming process with a relatively reduced process time.

• Journal of the Korean Ceramic Society
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• 제21권3호
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• pp.217-220
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• 1984

The leaching of Na-fluor-tetrasilicic mica $NaMg_{2.5}(Si_4O_{10})F_2$ (Na-TSM) in the deionized water was investigated by measuring the pH released Na and Mg contents in the suspension. According to the results it was found that $Na^+$ ions of interlayer in the Na-TSM were easily replaced by $H^+$ ions from the deionized water because $Na^+$ ions of I were repidly diffused to form a large hydrated electric double layer in the suspension.

• 보존과학연구
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• 통권15호
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• pp.59-103
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• 1994

Painting is well regarded as a stratified structure by the conservators and restorers. Hence, the scientific methods have been developed for the study of the interal layer of paintings. Examples of such methods are X-ray, infra-red, and ultra-violet photography. A more direct method is to look at the painting in cross section under the microscope and to analyze pigments using an electron probe X-ray micro analyzer(EPMA).In this research, I study and analyze twenty two Korean paintings of self-portraits including the first oil painting of Hui Dong Koh's self-portrait stored in the museum of Tokyo National University of Fine Arts and Music, employing these scientific techniques. The small fragments taken from the ground layers of the early oil paintings(1915∼1942)are analyzed using the EPMA. According to their main materials, the ground layers can be classified into five types ; 1. Lead white layer and double layer of calcium carbonate and lead white, 2. Zinc white with some mixiture of lead white, 3.Titanium white with some barium white, 4. Barium white, 5.Double layer of titanium white and zinc white.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제19권1호
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권1호
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• pp.70-75
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• 2011

We introduced nanoscale interfacial layers between the PV layer and the cathode in poly (3-hexylthiophene):methanofullerene bulk-heterojunction polymer photovoltaic (PV) cells. The nanoscale double interfacial layers were made of ultrathin poly (oxyethylenetridecylether) surfactant and low-work-function alloy-metal of Al:Li layers. It was found that the nanoscale interfacial layers increase the photovoltaic performance, i.e., increasing short-circuit current density and fill factor with improved device stability. For PV cells with the nanoscale double interfacial layers, an increase in power conversion efficiency of $4.18{\pm}0.24%$ was achieved, compared to that of the control devices ($3.89{\pm}0.08%$) without the double interfacial layers.

• Proceedings of the KIEE Conference
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제29A권3호
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• pp.66-71
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• 1992

We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

• Proceedings of the KIEE Conference
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1277-1278
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• 2008

Pentacene 박막 트랜지스터의 소스/드레인 전극을 폴리머인 Poly(3,4-ethylene dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)를 사용하여 잉크젯 프린팅 방법으로 제작하였다. 펜타신 박막 트랜지스터는 열 증착법을 사용하여 폴리며 기판위에 100nm의 두께로 증착하였다. 게이트 절연막은 $SiO_2$ 위에 Polymethly Methacrylate (PMMA)를 증착시킨 double layer를 사용하였다. PMMA 위에 증착시킨 pentacene 결정립이 $SiO_2$ 위에 증착한 pentacene 결정립 보다 크게 성장하였고, double layer의 절연막을 씀으로 인해 게이트 누설 전류가 감소함을 보였다. Pentacene 증착 온도에 따른 결정립 크기를 비교하여 가장 적절한 온도를 찾았다. 프린팅 방법을 사용하여 만든 박막 트랜지스터는 전계효과 이동도가 ${\mu}_{FET}=0.023cm^2/Vs$ 이고, 문턱이전 기울기 S.S=0.49V/dec, 문턱전압 $V_{th}=-18V$, $I_{on}/I_{off}$ 전류비 >$10^3$의 전기적 특성을 보였다.

• Journal of the Korean Magnetics Society
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• 제17권3호
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• 제12권6호
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• pp.279-283
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• 2012

In is paper, we design and implement the low power, high speed touch screen controller that calculates and outputs the coordinate of touch point on the touch screen of mobile devices. The system clock is 10HMz, the number of input channels is 21, standby current is $20{\mu}A$, dynamic range of input is 140pF~400pF and the response time is 0.1ms/frame. It contains the power management unit for low power, automatic impedance calibration unit in order to adapt to humidity, temperature and evaluation board, adjacent key and pattern interference suppression unit, serial interface unit of I2C and SPI. The function and performance is verified by using FPGA and $0.18{\mu}m$ CMOS standard process. The implemented touch screen is designed for using in the double layer ITO(Indium Thin Oxide) module with diamond pattern and single layer ITO module for cost-effective which are applied to mobile phone or smart remote controller.