• Title/Summary/Keyword: doping component

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AC Conductivity of $(Sr_{0.75}$,$La_{0.25}$) $TiO_3/SrTiO_3$ Superlattices

  • Choe, Ui-Yeong;Choe, Jae-Du;Lee, Jae-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.31.2-31.2
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    • 2011
  • We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

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Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

  • Park, Seong-Ju;Ro, Jeong-Rae;Sim, Jae-Ki;Lee, El-Hang
    • ETRI Journal
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    • v.16 no.3
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    • pp.1-10
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    • 1994
  • Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

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Superconducting and Magnetic Properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ System ($(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ 계의 초전도 및 자기적 특성)

  • Lee, H.K.
    • Progress in Superconductivity
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    • v.13 no.3
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    • pp.163-168
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    • 2012
  • The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

A Study on the high frequency properties of Mn-Zn ferrite with Nd2O3 addition (Nd2O3 첨가에 따른 Mn-Zn ferrite의 고주파 특성에 관한 연구)

  • Choi, U-Sung
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.228-232
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    • 2003
  • The effects of$ Nd_2$$O_3$addition on the properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. With increasing the Neodymium oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. With increasing the content of Neodymium oxides. both the real and imaginary component of complex permeability and the magnetic loss(tan$\delta$) increased. Because reason that magnetic loss increases is high ratio that a real department increases than imaginary department. Magnetic loss increased none the less for increasing the real department related with magnetic permeability. But, the magnetic loss of ferrite doped with the Neodymium oxides were lower than that of none doped Mn-Zn ferrite. The small amount of percent Neodymium oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary.

Approach to High Stable Oxide Thin-Film Transistors for Transparent Active Matrix Organic Light Emitting Devices

  • Cheong, Woo-Seok;Lee, Jeong-Min;Jeong, Jae-Kyeong;KoPark, Sang-Hee;Yoon, Sung-Min;Cho, Doo-Hee;Ryu, Min-Ki;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.382-384
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    • 2009
  • In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

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Preparation of Diamond Thin film for Electric Device and Crystalline Growth (전자 디바이스용 다이아몬드 박막의 제조 및 결정성장 특성)

  • Kim, Gru-Sik;Park, Soo-Gil;Son, Won-Keun;Fujishiama, Akira
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1720-1723
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    • 2000
  • Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

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Synthesis and Characterization of Zn(1-x)NixAl2O4 Spinels as a New Heterogeneous Catalyst of Biginelli's Reaction

  • Akika, Fatima-Zohra;Kihal, Nadjib;Habila, Tahir;Avramova, Ivalina;Suzer, Sefik;Pirotte, Bernard;Khelili, Smail
    • Bulletin of the Korean Chemical Society
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    • v.34 no.5
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    • pp.1445-1453
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    • 2013
  • $Zn_{(1-x)}Ni_xAl_2O_4$ (x = 0.0-1.0) spinels were prepared at $800^{\circ}C$ by co-precipitation method and characterized by infrared spectroscopy, X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The specific surface area was determined by BET. SEM image showed nano sized spherical particles. XPS confirmed the valence states of the metals, showing moderate Lewis character for the surface of materials. The powders were successfully used as new heterogeneous catalysts of Biginelli's reaction, a one-pot three-component reaction, leading to some dihydropyrimidinones (DHPMs). These new catalysts that produced good yields of DHPMs, were easily recovered by simple filtration and subsequently reused with persistent activity, and they are non-toxic and environmentally friendly. The optimum amount of catalyst is 20% by weight of benzaldehyde derivatives, while the doping amount has been found optimal for x = 0.1.

Preparation and Crystalline Growth Properties of Diamond Thin Film by Microwave Plasma CVD (MWPCVD법에 의한 다이아몬드 박막의 제조 및 결정성장 특성)

  • ;;A. Fujishima
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.905-908
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    • 2000
  • The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

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Encapsulation and optical properties of Er3+ ions for planar optical amplifiers via sol-gel process (졸-겔법을 이용한 광증폭기의 Er 이온 캡슐화 및 광학적 특성)

  • Kim, Joo-Hyeun;Seok, Sang-Il;Ahn, Bok-Yeop
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.135-135
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    • 2003
  • The fast evolution in the fold of optical communication systems demands powerful optical information treatment. These functions can be performed by integrated optical systems. A key component of such systems is erbium doped waveguide amplifier(EDWA). The intra 4f radiative transition of Er at 1.5 $\mu\textrm{m}$ is particularly interesting because this wavelength is standard in optical telecommunications. The fabrication of waveguide amplifier for integrated optics using sol-gel process has received an increasing attention. Potential advantage of lower cost by less capital equipment and easy processing makes this process an attractive alternatives to conventional technologies like flame hydrolysis deposition, ion exchange and chemical vapor deposition, etc. In addition, sol-gel process has been found to be extremely suitable for the control of composition and refractive index related directly with optical properties. The main drawback of such an amplifier with respect to the EDWA is the need for a much higher Er3+ concentration to compensate for the smaller interaction length. However, the high doping of Er might be resulted in the non-radiative relaxation by clustering of Er ions End co-operative upconversion. In order to solve this problem, we investigate the possibility of avoiding short Er-Er distances by encapsulation of Er3+ ions in hosts such as organic-inorganic hybrid materials. For inorganic-organic hybrid sols, methacryloxypropyltrimethoxysilane (MPTS), zirconyl chloride octahydrate and erbium(III) chloride hexahydrate were used as starting materials, followed by conventional sol-gel process. It was observed by TEM that nano sols having core/shell toplology were formed, depending on the mole ratio of Zr/Er. The surface roughness for the coatings on Si substrate was investigated by AFM as a function of Zr/Er ratio. The local environment and vibrational Properties of Er3+ ions were studied using Near-IR, FT-IR, and UV/Vis spectroscopy. Nano hybrid coatings derived from polymer and Er doped encapsulation Eave the good luminescence at 1.55$\mu\textrm{m}$.

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Recent Advance in Microbial Fuel Cell based on Composite Membranes (복합막 기반의 미생물 연료전지 연구에 대한 총설)

  • Kim, Se Min;Patel, Rajkumar;Kim, Jong Hak
    • Membrane Journal
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    • v.31 no.2
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    • pp.120-132
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    • 2021
  • Microbial fuel cell (MFC) is a bio-electrochemical device that generates electricity by utilizing bacterial catalytic activity that degrades wastewater. Proton exchange membrane (PEM) is the core component of MFC that decides its performance, and Nafion membrane is the most widely used PEM. In spite of the excellent performance of Nafion, it has drawbacks such as high cost, biofouling issue, and non-biodegradable property. Recent studies in MFC attempted to synthetize the alternative membrane for Nafion by incorporating various polymers, sulfonating, fluorinating, and doping other chemicals. This review summarizes characteristics and performances of different composite membrane based MFCs, mostly focusing on PEM.