• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.168-171
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\MU}m$ thickness on p+ seeding layer. The cells with p+ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is $12.95\%$, with Voc=633mV, $Jsc=26.5mA/cm^2,\;FF=77.15\%$. The $P^+$ seeding layer of the cell is $20{\mu}m$, thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• Current Photovoltaic Research
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• v.7 no.4
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• pp.125-129
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• 2019

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.5
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• pp.501-508
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• 1988

This paper presents the light-induced effects on the elelctrical and optical properties of undoped and doped hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. The dark conductivity changes may be quenched for heavier doped a-Si:H films. We have also analyzed the variations of micro-structure of a-Si:H film such as silicon-hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is elucidated that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.2-257.2
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• 2015

In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.51.1-51.1
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• 2010

$Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.240-247
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.