• 대한전자공학회논문지
• /
• 제11권1호
• /
• pp.33-39
• /
• 1974

이온의 충돌에 위한 주입자의 저온광산식 주입방법과 아울러 그 장치의 구조를 초개하였다. 본주입작용은 희석된 건기의 푸라주마분국기내에서의 저에너지 입자의 충돌과 기판의 예용가열에 의한 방사증식철산의 원리에 봉로 기인되고 있다. 본법입방식에 의해서 각종주입자를 영도체들속에 법입시켜 본 결과도 또한 나타나 있다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.154-155
• /
• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Bulletin of the Korean Chemical Society
• /
• 제24권1호
• /
• pp.49-54
• /
• 2003

TiO₂nanoparticles were synthesized using the metallorganic chemical vapor deposition process. Particles with and without metal ion dopants were obtained. X-ray photoelectron and energy dispersive X-ray spectroscopic measurements confirmed the stoichiometry of the TiO₂nanoparticles. X-ray diffraction patterns showed a polycrystalline anatase structure of TiO₂. Transmission electron microscopy revealed that these particles are of nanoscale dimensions. Exact particle size and size distribution analyses were carried out by dynamic light scattering. The average particle size was determined to be 22 nm. The nanosize particles provided large surface area for photocatalysis and a large number of free surface-charge carriers, which are crucial for the enhancement of photocatalytic activity. To improve the photocatalytic activity, metal ions, including transition metal ions $(Pd^{2+},\;Pt^{4+},\;Fe^{3+})$ and lanthanide ion $(Nd^{3+})$ were added to pure TiO₂nanoparticles. The effects of dopants on photocatalytic kinetics were investigated by the degradation of 2-chlorophenol under an ultraviolet light source. The results showed that the TiO₂nanoparticles with the metal ion dopants have higher photocatalytic activity than undoped TiO₂. The $Nd^{3+}$ ion of these dopant metal ions showed the highest catalytic activity. The difference in the photocatalytic activity with different dopants is related to the different ionic radii of the dopants.

• Journal of Electrochemical Science and Technology
• /
• 제11권4호
• /
• pp.352-360
• /
• 2020

Lithium cobalt oxide (LiCoO₂, LCO) has been widely used as a cathode material for Li-ion batteries (LIBs) owing to its excellent electrochemical performance and highly reproducible synthesis even with mass production. To improve the energy density of the LIBs for their deployment in electro-mobility, the full capacity and voltage of the cathode materials need to exploited, especially by operating them at a higher voltage. Herein, we doped LCO with divalent calcium-ion (Ca²⁺) to stabilize its layered structure during the batteries' operation. The Ca-doped LCO was synthesized by two different routes, namely solid-state and co-precipitation methods, which led to different average particle sizes and levels of dopant's homogeneity. Of these two, the solid-state synthesis resulted in smaller particles with a better homogeneity of the dopant, which led to better electrochemical performance, specifically when operated at a high voltage of 4.5 V. Electrochemical simulations based on a single particle model provided theoretical corroboration for the positive effects of the reduced particle size on the higher rate capability.

• Korean Chemical Engineering Research
• /
• 제40권6호
• /
• pp.752-756
• /
• 2002

PDP(Plasma Display Panel)용 녹색 형광체인 $Zn_2SiO_4:Mn$ 형광체의 제조에 있어 콜로이드 분무 열분해법을 도입하고, $Zn_2SiO_4$ wellimite 결정의 $Si^{4+}$ 자리를 치환하는 $Gd^{3+}/Li^+$ 부활성제를 첨가하여 형광체의 발광특성을 향상시키고자 하였다. 14 nm 크기의 fumed silica 입자를 규소 전구체로 도입한 콜로이드 분무열분해법에 의해서 제조되어진 $Zn_2SiO_4:Mn$ 입자는 응집이 없는 구형의 형상, 작은 입자 크기 및 좁은 입도 분포를 가졌다. $Gd^{3+}/Li^+$ 함량은 $Zn_2SiO_4:Mn$ 형광체 입자의 발광특성에 영향을 끼쳤으며, 적정한 함량의 $Gd^{3+}/Li^+$ 부활성제를 첨가함으로써 진공 자외선하에서 형광체의 발광휘도를 향상시키고, 잔광시간을 크게 줄일 수 있었다. 분무 열분해법에 의한 $Gd^{3+}/Li^+$이 코도핑된 $Zn_2SiO_4:Mn$ 형광체 입자의 제조에 있어서 후열처리 온도는 형광체의 발광특성을 결정짓는 주요한 인자이다. 0.1 mol%의 $Gd^{3+}/Li^+$ 부활제를 포함하고 $1,145^{\circ}C$ 온도에서 소결된 $Zn_2SiO_4:Mn$ 형광체 입자는 상업용 형광체에 비해 5% 높은 발광 휘도과 5.7 ms의 잔광시간을 가졌다.

• 전기학회논문지
• /
• 제61권2호
• /
• pp.339-341
• /
• 2012

The high Tc superconductor of YBCO system with the nominal composition of precursor was prepared from mixed powders of $Y_2O_3$, $BaCO_3$, CuO and $TiO_2$ by the thermal pyrolysis method. The effect of $TiO_2$ doping to Y based ceramics superconductors fabricated by the thermal pyrolysis reaction, to investigate the effect of the dopant on the superconductivity. The voltage appearing across the field-cooled HTS sample increased with external magnetic field. The improvement of critical current property as well as the mechanical property is important for the application. The improvement of the critical current can be achieved by forming the nano size defect working as a flux pining center inside the superconductor. We simply added $TiO_2$ to starting materials to dope $TiO_2$ and observed an increase in the trapped field and the critical current density up to at least 5 wt % $TiO_2$. The $TiO_2$ was converted to fine $BaTiO_3$ particles which were trapped in YBCO matrix during the sintering process. We observed a peak effect of Jc that can be attributed to $TiO_2$ doping and results suggest that introducing a proper amount of pinning centers can significantly enhance current density.

• 공업화학
• /
• 제7권6호
• /
• pp.1061-1068
• /
• 1996

본 연구는 다공성 입자에 전도성 단량체를 침투시켜서 전도성 고분자 복합체를 제조하는 연구로 다단계 seed 중합법을 이용하여 입자를 제조하고, 용매추출법으로 선형 고분자를 제거하는 방법으로 specific pore volume 및 specific surface area가 각기 다른 다공성 입자를 제조하였고, 이 다공성 입자를 모체 고분자로 하여 도핑제를 산화용액에 녹여 흡수시키고 건조한 뒤 전도성 단량체를 유기용매에 녹여 다공성 입자에 침투시킨 후 중합하여 전도성 복합체를 제조하였다. 이때, 모체 고분자에 침투되는 전도성 단량체의 농도 및 유기용매와 산화제의 산화용매 등을 중합 변수로하여 이 변수들과 전도도와의 상관 관계를 살펴보았다.

• 한국재료학회지
• /
• 제4권7호
• /
• pp.808-816
• /
• 1994

본 연구에서는 안정제를 이용하는 반회분식 분산 중합(semi batch dispersion polymerization)공정으로 전도성 고분자인 p-Doped polypyrrole 입자를 제조하였다. 반회분식 분산 중합은 단량체를 monomer starved 조건하에서 연속 주입하여 중합시키는 방법으로써 polyvinylalcohol(PVA)을 안정제로 사용한 경우 평균 50nm, methylcellulose를 안정제로 사용한 경우평균 95nm 정도의 입자 크기를 갖는 dispersion을 제조할 수 있었으며, 이의 입자 크기 및 전도도는 단량체 투입 속도, 개시제 농도와 안정제의 종류, 분자량 및 농도에 따라 변화하였다. 이는 도입 성분중 개시제와 안정제의 역할(친수성 정도, 분자량)에 따라 달라지는 것으로, 이에 따른 물성의 최적점을 찾을 수 있었다.

• 전기화학회지
• /
• 제15권2호
• /
• pp.67-73
• /
• 2012

본 연구에서는 습식분쇄, 구형화 분무건조 및 열처리 공정을 통해 구형의 $LiMn_{2-x}M_xO_4$(M = Al, Mg, B) 스피넬계 양극소재를 합성하고, 이의 전기화학적 성능을 평가하였다. $MnO_2$ (Tosoh, 91.94%), $Li_2CO_3$ (SQM, 97%), $MgCO_3$ (Aldrich, 99%), $Al(OH)_3$ (Aldrich, 99%) 및 $B_2O_3$ (Aldrich, 99%)를 원료로 사용하였으며, 분무건조공정에서 전구체의 구형화도 증가를 위해 PAAH 바인더를 첨가하였다. 200~500 nm 크기로 분쇄된 혼합 슬러리 용액으로부터 분무건조법을 통해 구형의 전구체를 제조하고, 이를 다양한 조건에서 열처리하여 최종 스피넬계 $LiMn_{2-x}M_xO_4$ (M = Al, Mg, B) 양극소재를 제조하였다. 제조된 구형의 $LiMn_{2-x}M_xO_4$ (M = Al, Mg, B) 양극재료는 이종원소 치환량, 특히 Boron 치환량에 따라 입자 표면 및 내부의 치밀도가 변화하는 것을 확인할 수 있었으며, 치밀도가 증가함에 따라 소재의 출력특성이 향상되었으며, 최적 조성의 양극소재는 상온 5 C 용량이 0.2 C 용량 대비 90% 이상이 됨을 확인하였다. 또한 표면의 치밀도도 증가함에 따라 $60^{\circ}C$ 고온 충방전 조건에서 수명특성이 향상되어 500회 사이클 이후에도 초기용량의 80% 이상을 유지하였다.

• 한국재료학회지
• /
• 제2권3호
• /
• pp.202-206
• /
• 1992

$CeO_2$를 첨가한 Y-Ba-Cu-0 초전도체를 포정반응을 포함한 준용용법으로 제조하여 미세조직과 초전도성을 관찰하였다. 첨가한 $CeO_2$는 포정반응중에 $BaCeO_3$로 변화하였으며, 이 $BaCeO_3$는 방향성 성장한 1-2-3 초전도상의 기지에 미세하게 분산된다. 초전도체의 $T_{c}$는 첨가된 $CeO_2$함량에 관계없이 90K 이상으로 매우 높았다. 이는 준용융공정을 적용함으로서 제2상물질을 초전도상으로부터 분리할 수 있었기 때문으로 사료된다.