• 열처리공학회지
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• 제4권4호
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• pp.34-43
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• 1991

A small amount of misch metal and/or Zr was added as a dopant to 70.5wt----Cu-26wt----Zn-3.5wt----Al shape memory alloy in order to study the effect of grain refinement and heat treatments on the transformation behavior, stabilization of martensite, and shape memory ability. It was found that the addition of misch metal and Zr was very effective for reducing the grain size. The fracture mode has been changed from intergranular brittle fracture to ductile fracture with void formation and coalescence by the addition of misch metal and Zr. Aging of the ${\beta}$-phase decreases the $M_s$ temperature, but that of the martensite phase increases the $A_s$ temperature. The hysteresis of transformation temperature ${\Delta}T(A_s-M_s)$ has an increasing tendancy by grain refinement. The crystal structure of martensite was identified as monoclinic structure. As the grain size decreased, martensite stabilization more easily occured and the shape, memory ability has been reduced by the grain size refined.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2512-2518
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• 2014

The praseodymium-doped $TiO_2$ photocatalyst samples, which could degrade methyl orange under UV irradiation, were prepared by sol-microwave method for improving the photocatalytic activity of $TiO_2$. The resulting materials were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectra, Fourier transform infrared spectra (FTIR) and Ultraviolet-visible diffuse reflectance spectra (UV-vis DRS). It was found Pr doping retarded the growth of crystalline size and the phase transformation from anatase to rutile, and narrowed the band gap energy. Praseodymium doping brought about remarkable improvement in the photoactivity. The optimal dopant amount of Pr was 2% by molar of cement and the calcination temperature was $500^{\circ}C$ for the best photocatalytic activity. The improvement of photocatalytic activity was ascribed to the occurrence of lattice distortion and the effective containment of the recombination of the electron-hole by $Pr^{3+}$.

• 한국세라믹학회지
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• 제56권5호
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• pp.474-482
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• 2019

Chromium-doped zinc ferrite nanoparticles with the general formula Cr_yZnFe_2-yO₄ (y = 0, 0.025, 0.05, 0.075, and 0.1) were synthesized by a surfactant-assisted chemical co-precipitation route using metal nitrate salt precursors. The phase purity and structural parameters were determined by powder X-ray diffraction. The concentration of Cr³⁺ doped into ZnFe₂O₄ (ZF) noticeably affected the crystallite size, which was in the range of 22 nm to 36 nm, and all samples showed a single cubic spinel structure without any secondary phase or impurities. The lattice parameter, X-ray density, and skeletal density increased with an increase in the Cr-doping concentration; on the other hand, a decreasing trend was observed for the particle size and porosity. The influence of Cr³⁺ substitution on ZF magnetic properties were studied under an applied field of 15 kOe. The overall results revealed that the incorporation of a small amount of Cr dopant changed the structural, electrical, and magnetic properties of ZF.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.33-38
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• 1997

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.979-986
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• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1275-1276
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• 2007

For fabrication of $BaTiO_3$ system Ferroelectric thick films, (Ba,Sr,Ca)$TiO_3$ (BSCT) powders, prepared by using the alkoxide-based sol-gel method, were doped $MnCO_3$ as acceptor and $Dy_{2}O_{3}$ as donor. $MnCO_3$ and $Dy_{2}O_{3}$-doped (Ba,Sr,Ca)$TiO_3$ thick films were fabricated by screen printing techniques on high purity alumina substrates. The structure and dielectric properties were investigated with variation of $Dy_{2}O_{3}$ amount. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size and thickness of specimens no doped with $Dy_{2}O_{3}$ was 1.32mm, 52mm, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Dy_{2}O_{3}$ were 4043 and 0.4% at 1 kHz, respectively. The relative dielectric constant gradually decreased in the measured frequency range from 0.1 to 100 kHz

• 한국세라믹학회지
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• 제39권11호
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• pp.1055-1062
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• 2002

정방정 지르코니아의 상안정성 및 저온열화기구를 고찰하기 위해 Y2O3 안정화 지르코니아에 3가 양이온 산화물을 첨가한 후 그 소결체의 기계적 물성, 라만 스펙트럼 및 격자상수 변화 등을 관찰하였다. 2Y-TZP에 $Zr^{4+}$ 보다 이온크기가 큰 3가 양이온($Sc^{3+},\;Yb^{3+},\;Y^{3+},\;Sm^{3+},\;Nd^{3+},\;La^{3+}$)들을 2 mol%까지 첨가하여 $1500{\circ}C$에서 1시간 소결후, X-ray 상분석 결과 $La^{3+}$의 경우에는 0.5 mol% 이상 첨가시 pyrochlore 상$(La_2Zr_2O_7)$의 형성으로 정방정상의 상안정성이 저하되었다. 첨가량이 증가할수록 $Zr6{4+}$과 이온크기가 거의 비슷한 $Sc^{3+}$를 첨가한 경우에는 정방정상만 관찰되었으나 $Yb^{3+},\;Y^{3+},\;Sm^{3+},\;Nd^{3+}$를 첨가한 경우에는 입방정상이 형성되었다. 양이온 크기가 커질수록 c/a비는 증가하였으나 $220{\circ}C$에서 500시간까지 열처리후 상분석 결과 단사정량은 감소하였다.

• 대한화학회지
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• 제29권6호
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• pp.608-614
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• 1985

$ZrO_2$가 10, 20, 30, 40, 그리고 50 mol% 포함된 $ZrO_2-Sm_2O_3$계의 전기전도도를 500 ~ 1000$^{\circ}C$와 $10^{-5}~10^{-1}Po_2$ atm에서 측정하였다. 전기전도도를 온도의 함수로 도시한 결과 650$^{\circ}C$ 근처에서 온도의존성이 큰 고온영역과 적은 저온영역으로 구분되었으며 두 개의 각기 다른 결함구조를 보여 주었다. 전기전도도가 산소분압의 증가에 따라 증가하므로 P형의 전자성 반도체이며 고온영역에서 산소압력의존성은 ${\sigma}{\propto}Po_2^{1/5.3}$, 저온영역에서 ${\sigma}{\propto}Po_2^{1/6}$에 가까운 값을 나타냈다. ${\sigma}{\propto}Po_2^{1/5.3}$인 영역에서의 defect는 Oi"이며 ${\sigma}{\propto}Po_2^{1/6}$인 영역에서의 defect는 $Vs_m$"'이다. 고온영역에서 carrier type은 electron hole이며 저온영역에서는 이온성의 기여도가 있다. 이러한 이온성의 기여는 dopant의 양이 증가할 수록 커진다. 60mol% 가 포함된 $ZrO_2-Sm_2O_3$계에서는 전기전도도는 산소압력이 감소함에 따라 증가하였다.