• Tribology and Lubricants
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• 제36권1호
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• pp.1-10
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• 2020

Large-area two-dimensional (2D) materials synthesized by chemical vapor deposition on donor substrates are promising functional materials for conductors, semiconductors, and insulators in flexible and transparent devices. In most cases, 2D materials should be transferred from a donor substrate to a target substrate; however, 2D materials are prone to damage during the transfer process. The damages to 2D materials during transfer are caused by contamination, tearing, and chemical doping. For the commercialization of 2D materials, a damage-free, large-area, and productive transfer process is needed. However, a transfer process that meets all three requirements has yet to be developed. In this paper, we review the recent progress in the development of transfer processes for 2D materials, and discuss the principles, advantages, and limitations of each process. The future prospects of transfer processes are also discussed. To simplify the discussion, the transfer processes are classified into four categories: wet transfer, dry transfer, mechanical transfer, and electro-chemical transfer. Finally, the "roll-to-roll" and "roll-to-plate" dry transfer process is proposed as the most promising method for the commercialization of 2D materials. Moreover, for successful dry transfer of 2D materials, it is necessary to clearly understand the adhesion properties, viscoelastic behaviors, and mechanical deformation of the transfer film used as a medium in the transfer process.

• 한국세라믹학회지
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• 제41권5호
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• pp.401-405
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• 2004

순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스와 도너와 억셉터가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 와 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스를 제조하고 미세구조, 강유전 P-E 이력특성, 상전이 온도를 조사하였다. 입자크기는 SrB $i_2$T $a_2$$O_{9}$ 세라믹스의 강유전 이력곡선에는 영향을 주지 않았다. 도너를 치환한 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스는 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 잔류 분극이 크고 더욱 포화된 강유전 P-E 이력곡선을 보였으며, 억셉터가 치환된 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스는 잔류분극이 크게 감소하여 가운데가 잘록한 모양을 보였다. 도너가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스의 강유전 분극이 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 더 큰 것은 Sr 공공의 생성에 의하여 분역벽 이동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• 한국세라믹학회지
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• 제37권5호
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• pp.491-496
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• 2000

Single phae Pb(Mg1/3Nb2/3)O3-based solid solutions, the Mg2+ of which are replaced by 20mol% of Ni2+, Zn2+, Cd2+, and the Pb2+ of which are replaced by 0∼20 mol% of La3+, were synthesized and their ordering structures of B-site cations were investigated by XRD and TEM. The B'-site cations (Mg2+, Ni2+, Zn2+, Cd2+) are disordered while these B'-site cations and the B"-site cations (Nb5+) are nonstoichiometrically 1:1 ordered within the ordered nano-domains dispersed in the Nb5+-rich disordered matrix. The charge imbalance between the B'-rich ordered nano-domains and the B"-rich disordered matrix are compensated by the doping of electron donor such as La3+, which enhances the degree of nonstoichiometric 1:1 ordering. For a given La3+ content, the degree of nonstoichiometric 1:1 ordering increases as the average ionic size difference between the B'-and B"-site cations increases, Ni2+

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.231-232
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• 2008

The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• 센서학회지
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• 제14권5호
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• pp.331-336
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• 2005

The influence of water molecule on the electrical properties of single-walled carbon nanotube field effect transistors (SWNT-FETs) was reported. Conductance suppression was observed with the increase of the humidity. This can be explained by doping of the SWNT-FETs, which has p-type semiconductor characteristic, with the water molecules acting as an electron donor. However, after 65 % of humidity, conductance of the SWNT-FETs started to increase again, due to the opening of electron channels. Upon annealing at $400^{\circ}C$ in Ar atmosphere, conductance increases more than 500 %, and the threshold voltage shifts toward further positive gate voltages. The results of this experiment support possible application of single-walled carbon nanotubes for humidity sensing material.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.70-70
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• 2013

As the costs of carbon-footprinetd fuels grow continuously and simultaneously atmospheric carbon dioxide concentration increases, solar fuels are receiving growing attention as alternative clean energy carriers. These fuels include molecular hydrogen and hydrogen peroxide produced from water, and hydrocarbons converted from carbon dioxide. For high efficiency solar fuel production, not only light absorbers (oxide semiconductors, Si, inorganic complexes, etc) should absorb most sunlight, but also charge separation and interfacial charge transfers need to occur efficiently. With this in mind, this talk will introduce the fundamentals of solar fuel production and artificial photosynthesis, and then discuss in detail on photoelectrochemical (PEC) water splitting and CO2 conversion. This talk largely divides into two section: PEC water oxidation and PEC CO2 reduction. The former is very important for proton-coupled electron transfer to CO2. For this oxidation, a variety of oxide semiconductors have been tested including TiO2, ZnO, WO3, BiVO4, and Fe2O3. Although they are essentially capable of oxidizing water into molecular oxygen, the efficiency is very low primarily because of high overpotentials and slow kinetics. This challenge has been overcome by coupling with oxygen evolving catalysts (OECs) and/or doping donor elements. In the latter, surface-modified p-Si electrodes are fabricated to absorb visible light and catalyze the CO2 reduction. For modification, metal nanoparticles are electrodeposited on the p-Si and their PEC performance is compared.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.