• Title/Summary/Keyword: doherty

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Design of High Efficiency Doherty Power Amplifier Using Adaptive Bias Technique for Wibro Applications (적응형 바이어스 기법을 이용한 와이브로용 고효율 도허티 전력증폭기 설계)

  • Oh, Chung-Gyun;Choi, Jae-Hong;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.9 no.2
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    • pp.164-169
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    • 2005
  • In this paper, the high efficiency Doherty power amplifier using adaptive bias technique has been designed and realized for 2.3GHz Wibro applications. The RF performances of the Doherty power amplifier using adaptive bias technique have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with adaptive bias technique has been 36.6% at 34.0dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

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GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

  • Park, Jun-Chul;Kim, Dong-Su;Yoo, Chan-Sei;Lee, Woo-Sung;Yook, Jong-Gwan;Chun, Sang-Hyun;Kim, Jong-Heon;Hahn, Cheol-Koo
    • Journal of electromagnetic engineering and science
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    • v.11 no.1
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    • pp.16-26
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    • 2011
  • This paper presents high power and high efficiency Doherty amplifiers for 2.345 GHz wireless broadband (WiBro) applications that use a Nitronex 125-W ($P_{3dB}$) GaN high electron mobility transistor (HEMT). Two- and three-way Doherty amplifiers and a saturated Doherty amplifier using Class-F circuitry are implemented. The measured result for a center frequency of 2.345 GHz shows that the two-way Doherty amplifier attains a high $P_{3dB}$ of 51.5 dBm, a gain of 12.5 dB, and a power-added efficiency (PAE) improvement of about 16 % compared to a single class AB amplifier at 6-dB back-off power region from $P_{3dB}$. For a WiBro OFDMA signal, the Doherty amplifier provides an adjacent channel leakage ratio (ACLR) at 4.77 MHz offset that is -33 dBc at an output power of 42 dBm, which is a 9.5 dB back-off power region from $P_{3dB}$. By employing a digital pre-distortion (DPD) technique, the ACLR of the Doherty amplifier is improved from -33 dBc to -48 dBc. The measured result for the same frequency shows that the three-way Doherty amplifier, which has a $P_{3dB}$ of 53.16 dBm and a gain of 10.3 dB, and the saturated Doherty amplifier, which has a $P_{3dB}$ of 51.1 dBm and a gain of 10.3 dB, provide a PAE improvement of 11 % at the 9-dB back-off power region and 7.5 % at the 6-dB back-off region, respectively, compared to the two-way Doherty amplifier.

Linearity Improvement of Doherty Amplifier Using Analog Predistorter with Phase-Controlled Error Generator (위상조절 왜곡발생기를 가진 아날로그 전치왜곡기를 이용한 Doherty Amplifier의 선형성 개선)

  • Lee, Yong-Sub;Jeong, Yoon-Ha
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.44 no.2 s.314
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    • pp.32-38
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    • 2007
  • This paper represents a Doherty amplifier (DPA) with analog predistorter (PD) to improve the linearity of the DPA while preserving the high efficiency. A third-order PD cancels fifth-order intermodulation (IM5) as well as third-order intermodulation (IM3) components by their same phase difference in the PD and DPA. This is accomplished by independently controlling their phase by using the phase-controlled error generator in the PD. Also, we confirm the phase-control ability of the error generator experimentally with a simple and accurate phase measurement setup. For experimental verification, a third-order PD has been implemented and tested in a 180-W DPA at the wide-band code division multiple access (WCDMA) band of 2.11-2.17 GHz. Two-tone test results show that significant cancellation of IM3 and IM5 components can be obtained. For four-carrier WCDMA applications, significant adjacent channel leakage ratio (ACLR) improvement is achieved over a wide range of output power levels. This technique is cost-effective and convenient due to its simple structure, compact size, and three control parameters.

Design and Implementation of RF Predistorted Asymmetric Doherty Power Amplifier (RF 전치왜곡 비대칭 도허티 증폭기 설계 및 제작)

  • 최영락;장동희;김상희;조경준;김종헌;김남영;이병제;이종철
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.182-185
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    • 2002
  • A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

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A Study on Linearity and Efficiency Enhancement of Power Amplifier (전력증폭기의 선형성 및 효율 향상에 관한 연구)

  • Jeon Joong-Sung
    • Journal of Advanced Marine Engineering and Technology
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    • v.29 no.6
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    • pp.618-627
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    • 2005
  • In this paper, we have compared and analyzed the performance of high amplifier using Doherty technique to improve linearity and efficiency of base station and repeater Power amplifier for WCDMA. This Doherty amplifier implements with 3dB branch line coupler and $90^{\circ}C$ transmission line The phase offset line is designed to maintain the high linearity and efficiency at the low efficiency Period of the power amplifier CW 1-tone experimental results at the WCDMA frequency $2.11{\sim}2.17GHz$ shows that Doherty amplifier which achieves power add efficiency(PAE) of 50% at 6dB back off the point from maximum output power 52.3 dBm, obtains higher efficiency of 13.3% than class AB Finding optimum bias Point after adjusted gate voltage, Doherty amplifier shows that $IMD_3$ improves 4dB.

Integratable Micro-Doherty Transmitter

  • Lee, Jae-Ho;Kim, Do-Hyung;Burm, Jin-Wook;Park, Jin-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.4
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    • pp.275-280
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    • 2006
  • We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.

Realization of High Linear and Efficiency Power Amplifier Using Optimum Load Without Hybrid Coupler (Hybrid Coupler 제거와 부하 최적화를 이용한 고효율 및 고선형성 전력 증폭기의 관한 연구)

  • An, Se-Hwan;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.2 s.344
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    • pp.88-93
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    • 2006
  • In this paper, smaller load has been used compared with the conventional Doherty amplifier and PBG structure have been employed to suppress IMD (Inter-modulation Distortion) and improve PAE (Power Added Efficiency). And The PBG structure has been employed on the output macthing network of Doherty amplifier. The proposed power amplifier has been improved more the IMD3 by 5.5 dBc, and the average PAE by $5\%,$ at peak output power, $18\%$ at 8dB back-off point respectively than the conventional Doherty power amplifier.

A Study on Linearity and Efficiency Improvement for 3-Way Doherty Amplifier (3-Way Doherty 증폭기의 선형성 및 효율 개선에 관한 연구)

  • Hong Yong-Eui;Yang Seung-In
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.2 s.105
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    • pp.124-128
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    • 2006
  • In this paper, Compact Microstrip Resonant Cell(CMRC)s have been employed to suppress IMD(Intermodulation Distortion) of the 3-Way Doherty amplifier. This method can not only improve the linearity and the efficiency but also be simpler, smaller and more inexpensive than existing linearity methods; (for example harmonic feedback, back off, feed-forward, predistortion and so on) Also, using only one divider reduces the size of the proposed 3-Way Doherty amplifier. As a result, the IMD3 and the PAE have been improved by 4.5 dB and by $9.2\%$, respectively, using the proposed Doherty amplifier with CMRC.

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT (내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기)

  • Kang, Hyunuk;Lee, Hwiseob;Lim, Wonseob;Kim, Minseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.269-276
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    • 2016
  • This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

Research on PAE of Doherty Amplifier with Low-pass Filter of Wide Stopband (광대역 특성의 LPF를 이용한 도허티 증폭기의 전력 효율 향상에 관한 연구)

  • Jung, Du-Won;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.1
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    • pp.107-111
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    • 2009
  • In this paper, the power added efficiency(PAE) of a Doherty amplifier has been improved by applying Photonic Bandgap(PBG) characteristics on the output of amplifier. As a result of the high order harmonics termination, excellent improvement in PAE, maximum output power as well as linearity is obtained. The PAE is improved as much as relatively 35% compared with a conventional Doherty amplifier. Moreover, size of LPF is reduced by PBG characteristics. Therefore the whole amplifier circuit size is considerably reduced by diminishing in size of the LPF as compared with a Doherty amplifier using conventional LPFs.