• Journal of Korean Society of Water and Wastewater
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• v.23 no.6
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• pp.703-709
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• 2009

In this study, an artificial-waterway experiment was conducted, using an attachment plate, on which algae from Nanakita river was placed, to examine the influence exerted by the variation of the dissolved-silicon concentration on the river periphyton. As a result, the variation of the dissolved-silicon concentration was found to exert an influence on the density of the adhesion diatom, and the mole ratio limits of the silica were about $Si/P{\fallingdotseq}182$ and $Si/N{\fallingdotseq}16.4$ or less. Moreover, the mole ratio that is necessary for proliferation was found to be larger than the value of the oceanic algae. Senedesmus sp. and Ankistrodesmus sp., which used silica in adhesion chlorophyta, received the influence of the silicon concentration strongly, and the twowere found to be superior in the environment, making silica a restriction factor.

• Journal of Food Hygiene and Safety
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• v.17 no.1
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• pp.15-19
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• 2002

The objectives of this study were to investigate the change of silicon, cations and anions dissolved in water before and after thawing, and analyzed what the white-colored precipitate (WP) farmed after thawing was composed of. The silicon concentration that has been changed might have been compared with the weight of WP under water-free state. The major component of WP has been approved to be a silicon, while calsium was only a little contained. As the weight of WP has been nearly equal to the reduced silicon concentration, the weight of its could be changeable calculated by silica (SiO$_2$) molecular weight. Therefore, WP could have been presumed to be a silica. The more silicon concentration was increased, the more weight of silicon was increased. Except for the sample "C", the amounts of cations and anions could be found to be unchangeable nearly. As a result of that, WP has been apparent to be silica itself while most of ions (excluded with Si) of any others were not changed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.221-227
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• 1997

The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

• Economic and Environmental Geology
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• v.42 no.4
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• pp.335-342
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• 2009

The effects of bacterial lysis on the rate of quartz dissolution were investigated under pH 7 condition using Bacillus subtilis cells which were either irradiated or non-irradiated with gamma ray. The amount of dissolved organic carbon (DOC) which resulted from bacterial lysis increased in slurries of quartz and bacteria mixture over experimental period. Lysis of non-irradiated bacteria led to the elevated concentration of dissolved silicon when compared with abiotic control. Concomitant increase in the amounts of DOC and dissolved silicon over time indicated that lixiviation of silicon from quartz was due to bacterial lysis. Higher amounts of DOC and dissolved silicon were present in the irradiated bacterial slurries than those of non-irradiated bacteria. The enhancement of quartz dissolution in the irradiated bacterial slurries was likely attributed to disruption of organic molecules in the bacterial cells by gamma ray and formation of effective ligands for quartz dissolution. The results suggest that the effects of bacterial lysis on mineral weathering rate should be considered for prediction of time for released radionuclides to migrate to surface biosphere in high level radioactive waste disposal site.

• Korean Chemical Engineering Research
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• v.55 no.5
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• pp.711-717
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• 2017

A fundamental study was conducted on the dissolution of North Korean magnesite using hydrochloric acid to understand the dissolution behavior of the magnesium and impurities. The influence of the acid concentration, particle size of the magnesite, reaction temperature, and pulp density on the dissolution of magnesium, iron, calcium, aluminum, and silicon dioxide was studied. The experimental results showed that 98.5% of magnesium, 86.9% of iron, 87.3% of calcium, 23.6% of aluminum, and 20.4% of silicon dioxide were dissolved when magnesite particle sizes within the range of $75{\sim}105{\mu}m$ were reacted using 3 M HCl solution under 6% pulp density at 363 K for 3 h. The residues that remained after the dissolution were silicon dioxide, talc, and clinochlore.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.205-209
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• 2001

Uniformly-doped silicon thin films were fabricated by ion beam sputter deposition. The thin films had four levels of copper dopant concentration ranging between 1 ${\times}$1019 and 1 ${\times}$ 1021 atoms/cm3 . Concentrations of Copper dopants were determined by the isotope dilution inductively coupled plasma mass spectrometry (ICP-MS) to provide certified reference data for the quantitative surface analysis by secondary ion mass spectrometry (SIMS). The copper-doped thin films were dissolved in a mixture of 1 M HF and 3 M HNO3 spiked with appropriate amounts of 65 Cu. For an accurate isotope ratio determination, both the detector dead time and the mass discrimination were appropriately corrected and isobaric interference from SiAr molecular ions was avoided by a careful sample pretreatment. An analyte recovery efficiency was obtained for the Cu spiked samples to evaluate accuracy of the method. Uncertainty of the determined copper concentrations, estimated following the EURACHEM Guide, was less than 4%, and detection limit of this method was 5.58 ${\times}$ 1016 atoms/cm3.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.459-464
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• 2016

In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.