• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.193-196
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• 2005

Low resistance Ni thin films for using NiSi formation and metallization by atomic layer deposition (ALD) method have been studied. ALD temperature window is formed between $200^{\circ}C\;and\;250^{\circ}C$ with deposition rate of $1.25{\AA}$/cycle. The minimum resistance of deposited Ni films shows $4.333\;{\Omega}/\square$ on the $SiO_2/Si$ substrate by $H_2$ direct purging process. The reason of showing the low resistance is believed to be due to format ion of the $Ni_3C$ phase by residual carbon in Bis-Ni The deposited film exhibits excellent step coverage in the trench having 1(100 nm) : 16 (1.6 um) aspect ratio.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.146-153
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• 2019

The exposure system is a device that transfers a circuit pattern to a desired location. To display patterns on a substrate without deforming the optical characteristics, the characteristics of the optical exposure system are very important. Therefore, to form a microcircuit pattern, a small divergence angle should impinge on the irradiation area. Also, since the light from the source must react uniformly with the photosensitizer, it must have high luminance efficiency and uniformity of illumination. In this paper a parabolic reflector and an aspherical lens were designed to solve the problem of narrow-angle implementation, and it was confirmed by simulation analysis after their arrangement that the beam angle, uniformity, and maximum illuminance satisfied the target performance.

• Journal of IKEEE
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• v.25 no.1
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• pp.64-68
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• 2021

We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.361-368
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• 2018

We investigated the interfacial properties of fluorocarbon self-assembled monolayers (FC-SAMs) with different alkyl chain lengths. It was found that the substrate characteristics were changed rapidly with the fabrication time and temperature of the SAM. FC-3SAM, which has the shortest alkyl chain in this study, showed a contact angle of $54.1^{\circ}$ when it was fabricated in an electric oven at $60^{\circ}C$ for the first minute. The FC-3SAM showed a contact angle of up to $76.9^{\circ}$ when it was fabricated in an electric oven at the same temperature condition for 180 minutes. FC-10SAM, which has the longest alkyl chain in this study, showed a contact angle of $64.7^{\circ}$ when it was fabricated at a temperature condition of $60^{\circ}C$ for 1 minute, and a contact angle of $98.7^{\circ}C$ at a temperature condition of $60^{\circ}C$ for 180 minutes. It was found that the FC-10SAM shows an increased contact angle and hydrophobic properties due to a well-aligned molecular structure resulting from a strong van der Waals force. In contrast, the FC-3SAM shows a small contact angle due to the intermolecular disorder resulting from a weak van der Waals force. The average roughness of FC-SAMs was investigated using AFM. The surface roughness of FC-SAMs, which verifies the results of contact angle, was confirmed. At a fabrication time of 120 minutes, the FC-10SAM showed an improvement in average roughness by 62% compared to that of FC-3SAM due to its good alignment.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.132-138
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• 2021

Electrochromic devices (ECDs) have been drawing great attention due to their high color contrast, low power consumption, and memory effect, and can be used in smart windows, automatic dimming mirrors, and information display devices. As with other electronic devices such as LEDs (light emitting diodes), solar cells, and transistors, the mechanical flexibility of ECDs is one of the most important issue for their potential applications. In this paper, we report on flexible ECDs (f-ECDs) fabricated using an all-in-one EC gel, which is a mixture of electrolyte and EC material. The f-ECDs are compared with rigid ECDs (r-ECDs) on ITO glass substrate in terms of color contrast, coloration efficiency, and switching speed. It is confirmed that the f-ECDs embedding all-in-one gel show strong blue absorption and have competitive EC performance. Repetitive bending tests show a degradation of electrochromic performance, which must be improved using an optimized device fabrication process.

• The Journal of Korean Institute of Information Technology
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• v.17 no.3
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• pp.43-50
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• 2019

In this paper, we propose a S-band oscillator with a reduced electrical size by applying a vertical split ring resonator(VSRR). The VSRR is a type of split ring resonator that operates as a resonator by the capacitance and inductance generated between the microstrip lines arranged on the top and bottom of the dielectric substrate and it has an advantage that the electrical size of the resonance circuit can be reduced as compared with the conventional ring resonator. In this paper, we design a VSRR operating over S-band and an oscillator using the VSRR as the resonant circuit. The proposed oscillator showed the output of 5.9dBm at 2.4HGz and showed the phase noise characteristics of -112.58dBc at 100KHz offset frequency and -117.85dBc at 1MHz offset.

• Clean Technology
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• v.15 no.3
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• pp.202-209
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• 2009

N-incorporated $WO_3$ ($WO_3$:N) films were synthesized using a reactive RF magnetron sputtering on unheated substrate and then post-annealed at different temperatures from 300 to $500^{\circ}C$ in air. The N anion narrowed optical band gap, due to its mixing effect with the O 2p valence states. Furthermore, it was found that the crystallinity of the $WO_3$:N films was significantly improved by the post-annealing at $350^{\circ}C$ and higher. As a result, the $WO_3$:N films exhibited much better photoelectrochemical performance, compared with pure $WO_3$ films post-annealed at the same temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.253-260
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• 2024

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm²/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

• Journal of Mushroom
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• v.10 no.3
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• pp.120-128
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• 2012

Recently sawdust cultivation of Shiitake mushroom (Lentinula edodes) is increasing. It is important to make mycelia to be brown on the substrate surface. This browned surface in sawdust cultivation plays an important role like as artificial bark of the oak log, which protects the other pests and suppresses water evaporation in the substrate. In order to isolate genes which related to brown color formation, differential display method was used. Two cDNA fragments obtained by DD-PCR were 1.2 and 1.6kb and these were expressed in white colored mycelia from L. edodes, but not brown colored mycelia. Partial sequencing of these cDNA fragments showed that the 1.6kb cDNA had 100% identity with the microsatellites gene from Dugenia polichroa. However, the other 1.2kb cDNA fragment had poly T tail on 3' region of partial open reading frame on 5' region. The new primer designed based on the sequence of 1.2kb cDNA was constructed. RT-PCR analysis using the newly designed 0.12kb cDNA specific primer showed that the gene was only expressed in white color mycelia, but not in brown color mycelia. Sequence analysis of 5' region of this 1.2kb cDNA revealed that this gene contained partial open reading frame consisted of 110 amino acid. Homology search using DNASIS database showed that this gene had high sequence homology of 66.7% in DNA level and 69.2 % in amino acid level with dTDP-glucose 4,6-dehydratases gene from Arabidopsis thaliata. The dTDP-glucose 4,6-dehydratases gene was known to be function to have tolerance with oxidation stress. These results strongly suggest that this gene isolated from white mycelia of L. edodes might have a function of repressor against mycelia browning. Therefore I designated this gene as BCR (Brown Color Repressor) gene.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.