• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.100-100
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• 2013

Among recently discovered 2-dimensional materials, molybdenum disulfide has fascinating physical properties. It is atomically thin and is a semiconductor with with a similar level of bandgap with silicon. Especially, its properties get interesting when it becomes thinner. Its bandgap goes through bandgap transition from indirect to direct gap. Also its gap size increases as its thickness decreases. In this talk, I am going to present our recent work on characterization of its electrical and optical properties. We used Raman and PL spectroscopy to observe its property dependence on thickness. We fabricated electrical devices to study optimal condition for MoS2 devices. Also we synthesized large-area MoS2 films for devices applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.575-575
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• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• Vacuum Magazine
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• v.5 no.2
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.304-304
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• 2012

III-V 화합물 태양전지는 실리콘 등 다른 태양전지에 비해 1sun상 30% 이상의 고효율을 갖고 있고 direct bandgap과 높은 이동도 등의 물질특성과 3족과 5족의 비율 조절로 같은 결정구조에서 에너지 bandgap이 다른 물질들을 만들기에 용이하여 태양전지 스펙트럼의 넓은 영역을 흡수할 수 있는 장점이 있다. 그러나 셀 자체의 물질이 실리콘에 비하여 고가여서 고성능이 요구되는 우주 인공위성 등에 적용이 되었지만, 2000년대 이후로 집광에 적용 가능한 태양전지의 연구를 거듭하여 2005년부터는 값싼 프레넬 렌즈를 이용하여 1 sun에 비해 500배 해당하는 빛을 셀에 집광하여 보다 효율을 증가시킴으로써 지상발전용에도 적용 가능한 셀을 형성하게 되었다. 더불어 태양전지의 효율을 증가시키기 위한 다양한 구조적 변화의 시도도 많이 이루어지고 있다. 최근 실리콘 태양전지의 표면에 texture 구조를 주어 높은 흡수율과 낮은 반사율을 갖게 함으로써 효율을 증가시키는 사례가 많아지고, III-V 화합물 태양전지도 texturing에 의해 증가된 효율을 발표한바 있다. 본 연구에서는 III-V 화합물 InGaP 태양전지의 window층으로 사용되는 InAlP 층에 Metal-assisted chemical etching (mac etching) 방법으로 texture 구조를 형성하여 etching 시간에 따른 InAlP층의 표면 변화와 반사율의 변화를 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.159.2-159.2
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• 2014

간접띠간격(indirect bandgap)을 갖는 층상형 반도체 $MoS_2$는 두께가 줄어들어 단일층이 되면 층간 상호작용의 변화로 인해 ~1.8 eV의 직접띠간격(direct bandgap)을 갖게 된다. 이러한 초박형 $MoS_2$의 발광 특성을 활용하기 위해서는 원자 크기 수준에서 두께와 물성을 조절할 수 있는 화학적 표면개질법에 대한 이해가 필요하다. 최근 아르곤(Ar) 플라즈마를 이용한 $MoS_2$의 층상(layer-by-layer) 식각과 표면제어에 관한 연구결과가 보고되었으나 자세한 반응 메커니즘은 알려져 있지 않다. 본 연구에서는 산소 플라즈마에 의한 단일층 및 복층 $MoS_2$의 산화반응을 원자힘 현미경(AFM), 광전자 분광법(XPS), 라만 및 광발광 분광법을 통해 관찰하고 반응 메커니즘을 이해하고자 한다. 플라즈마로 생성된 산소라디칼과의 반응시간이 증가함에 따라 $E{^1}_{2g}$와 $A_{1g}$-진동모드에서 기인하는 라만 신호, 그리고 A와 B-엑시톤에서 유래하는 광발광의 세기가 감소함을 확인하였다. XPS와 AFM을 통해 반응이 진행됨에 따라 $MoS_2$의 상층이 $MoO_3$로 산화되면서 나노입자로 응집되어 표면형태가 변화하는 것을 확인하였다. 이 결과는 플라즈마 산화반응을 이용하여 $MoS_2$ 표면에 구조적 결함(defect)과 층상 식각을 유발하고 광발광 특성 제어를 위해 전자구조를 조절할 수 있다는 가능성을 보여준다.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.324-329
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• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.