• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.58.1-58.1
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• 2010

In solar cell module manufacturing, single solar cells has to be joined electrically to strings. Copper stripes coated with tin-silver-copper alloy are joined on screen printed silver of solar cells which is called busbar. The bus bar collects the electrons generated in solar cell and it is connected to the next cell in the conventional module manufacturing by a metal stringer using conventional hot air or infrared lamp soldering systems. For thin solar cells, both soldering methods have disadvantages, which heats up the whole cell to high temperatures. Because of the different thermal expansion coefficient, mechanical stresses are induced in the solar cell. Recently, the trend of solar cell is toward thinner thickness below 180um and thus the risk of breakage of solar cells is increasing. This has led to the demand for new joining processes with high productivity and reduced error rates. In our project, we have developed a new method to solder solar cells with a laser heating source. The soldering process using diode laser with wavelength of 980nm was examined. The diode laser used has a maximum power of 60W and a scanner system is used to solder dimension of 6" solar cell and the beam travel speed is optimized. For clamping copper stripe to solar cell, zirconia(ZrO)coated iron pin-spring system is used to clamp both joining parts during a scanner system is traveled. The hot plate temperature that solar cell is positioned during lasersoldering process is optimized. Also, conventional solder joints after $180^{\circ}C$ peel tests are compared to the laser soldering methods. Microstructures in welded zone shows that the diffusion zone between solar cell and metal stripes is better formed than inIR soldering method. It is analyzed that the laser solder joints show no damages to the silicon wafer and no cracks beneath the contact. Peel strength between 4N and 5N are measured, with much shorter joining time than IR solder joints and it is shown that the use of laser soldering reduced the degree of bending of solar cell much less than IR soldering.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.8-18
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• 2007

In this paper, a 4bit cell way structure of PoRAM and the sensing method to drive this structure are researched. PoRAM has a different operation from existing SRAM and DRAM. The operation is that when certain voltage is applied between top electrode and bottom electrode of PoRAM device we can classify the cell state by measuring cell current which is made by changing resistance of the cell. In the decoder selected by new-addressing method in the cell array, the row decoder is selected "High" and the column decoder is selected "Low" then certain current will flow to the bit-line. Because this current is detect, in order to make large enough current, the voltage sense amplifier is used. In this case, usually, 1-stage differential amplifier using current mirror is used. Furthermore, the detected value at the cell is current, so a diode connected NMOSFET, that is, a device resistor is used at the input port of the differential amplifier to converter current into voltage. Using this differential amplifier, we can classify the cell states, erase mode is "Low" and write mode is "High", by comparing the input value, Vin, that is a product of current value multiplied by resistor value with a reference voltage, Vref.

• KIPS Transactions on Computer and Communication Systems
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• v.7 no.3
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• pp.81-90
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• 2018

Due to the dramatic advancement of IoT (Internet of Things), it is expected that tens of billions of IoT devices will be connected by the year 2024. Furthermore, as IoT technologies evolves, the security management in IoT platforms has become a critical issue. For example, there are interworking problems between heterogeneous IoT platforms caused by differences from communication protocols, security policies, etc. in each platform. In addition, unsecured interworking can cause major security issues including the information leakage. In this paper, in order to solve these problems, a security interworking architecture is proposed and implemented in both FIWARE and oneM2M, which are representative IoT platforms. First, the security architecture of FIWARE is analyzed and implemented, and then the security framework based on OAuth 2.0 is developed on Mobius platform. Finally, in order to validate the proposed security interworking architecture, a LED (Light-Emitting Diode) example, where the LED is controlled by only authorized users, is developed. The proposed architecture can be extended to the diverse IoT platforms and devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.5
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• pp.723-730
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• 2016

Solar cells in a PV module are connected in series and parallel to produce a higher voltage and current. The PV module has performance characteristics depending on solar radiation and temperature. In addition, the PV system causes power loss by special situations, including the shadows of the surrounding environment, such as nearby buildings and trees. In other words, an increase in power loss and a decrease in life cycle can occur because of the partial shadow and hot-spot effect. Therefore, this paper proposes the optimal configuration algorithm of a bypass diode to improve the output of a PV module and one of a PV array to minimize the loss of the PV array. In addition, this paper presents a model of a PV module and PV array based on the PSIM S/W. The simulation results confirmed that the proposed optimal configuration algorithms are useful tools for improving the performance of PV system.

• Journal of Astronomy and Space Sciences
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• v.30 no.3
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• pp.193-206
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• 2013

The detector subsystem of the Optical Wide-field Patrol (OWL) network efficiently acquires the position and time information of moving objects such as artificial satellites through its chopper system, which consists of 4 blades in front of the CCD camera. Using this system, it is possible to get more position data with the same exposure time by changing the streaks of the moving objects into many pieces with the fast rotating blades during sidereal tracking. At the same time, the time data from the rotating chopper can be acquired by the time tagger connected to the photo diode. To analyze the orbits of the targets detected in the image data of such a system, a sequential procedure of determining the positions of separated streak lines was developed that involved calculating the World Coordinate System (WCS) solution to transform the positions into equatorial coordinate systems, and finally combining the time log records from the time tagger with the transformed position data. We introduce this procedure and the preliminary results of the application of this procedure to the test observation images.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.4
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.828-835
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• 2001

Novel bipolar transresistance amplifier(TRA) and its offset-compensated TRA for high-performance current-mode signal processing are described. The TRA consist of two current follower for a current inputs, a current summer for the current-difference, a resistor for the current to voltage converter, and a voltage follower for the voltage output. The offset-compensated TRA adopts diode-connected npn and pnp transistor to reduce offset voltage in the TRA. The simulation results show that the TRA has impedance of 0.5 Ω at the input and the output terminal. The offset voltages at these terminals is 40 mV The offset-compensated TRA has the offset voltage of 1.1 mV and the impedance of 0.25 Ω. The 3-dB cutoff frequency is 40 MHz for the two TRA＇s when used as a current to voltage converter with unit-gain transresistance. The power dissipation is 11.25 mW.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.295-300
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• 2001

A variety of high voltage DC power supplies employing the high frequency inverter are difficult to achieve soft switching considering a quick response and no overshoot response under the wide load variation ranges which are used in medical-use x-ray high voltage generator from 20kV to 150kV in the output voltage and from 0.5mA to 1250mA, respectively. The authors develops soft switching high voltage DC power supply designed for x-ray power generator applications, which uses series resonant inverter circuit topology with a multistage voltage multiplier instead of a conventional high voltage diode rectifier connected to the second-side of a high-voltage transformer with a large turn ratio. A constant on-time dual mode frequency control scheme operating under a principle of zero-current soft switching commutation is described. Introducing the multistage voltage multiplier, the secondary transformer turn-numbers and stray capacitance of high-voltage transformer is effective to be greatly reduced. It is proved that the proposed high-voltage converter topology with dual mode frequency modulation mode control scheme is able to be the transient response and steady-state performance in high-voltage x-ray tube load. The effectiveness of this high voltage converter is evaluated and discussed on the basis of simulation analysis and observed data in experiment.

• Progress in Superconductivity
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• v.13 no.2
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• pp.105-110
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• 2011

SQUID sensor-based ultra low-field magnetic resonance apparatus with ${\mu}T$-level measurement field requires a strong prepolarization magnetic field ($B_p$) to magnetize its sample and obtain magnetic resonance signal with a high signal-to-noise ratio. This $B_p$ needs to be ramped down very quickly so that it does not interfere with signal acquisition which must take place before the sample magnetization relaxes off. A MOSFET switch-based $B_p$ coil driver has current ramp-down time ($t_{rd}$) that increases with $B_p$ current, which makes it unsuitable for driving high-field $B_p$ coil made of superconducting material. An energy cycling-type current driver has been developed for such a coil. This driver contains a storage capacitor inside a switch in IGBT-diode bridge configuration, which can manipulate how the capacitor is connected between the $B_p$ coil and its current source. The implemented circuit with 1.2 kV-tolerant devices was capable of driving 32 A current into a thick copper-wire solenoid $B_p$ coil with a 182 mm inner diameter, 0.23 H inductance, and 5.4 mT/A magnetic field-to-current ratio. The measured trd was 7.6 ms with a 160 ${\mu}F$ storage capacitor. trd was dependent only on the inductance of the coil and the capacitance of the driver capacitor. This driver is scalable to significantly higher current of superconducting $B_p$ coils without the $t_{rd}$ becoming unacceptably long with higher $B_p$ current.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.497-507
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• 2010

This paper presents current unbalance improved half-bridge LLC resonant converter using the two transformers with different leakage inductances. The proposed converter resonates with the leakage inductance and magnetizing inductance of the transformer and the resonant capacitance. The converter operates in a wide load range and satisfies the zero voltage switching even under the light load. The series-parallel connected two transformers act as the transformers or the resonant inductances according to the operational modes, and the separate output filter inductance in the transformer secondary is not needed using the leakage inductance. The current unbalance of the secondary diode rectifier is improved using the different leakage inductances of the two transformers and the asymmetrical pulse-width modulation (PWM). In this paper, the operational principle of the converter is explained by the modes, and the design example for the prototype is also shown. To validate the performance of the converter, the prototype is implemented as the designed circuit parameters and the good performance of the proposed converter is shown through the experimental results