• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.2 no.4
• /
• pp.59-64
• /
• 2009

In this paper, we represent characteristics and equivalent circuit of donut type resonator of defected ground structure (DGS), and can control resonant frequency with chip capacitor. In General, DGS operates like with parallel LC resonator. We found out variation of resonance frequency when capacitor is placed on slot of DGS. If the chip capacitor replace with varactor diode, the resonance frequencies can be controlled by voltage. This tualable resonator can apply to voltage controlled oscillator and tunable bandpass filter.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.3
• /
• pp.31-35
• /
• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.2
• /
• pp.152-159
• /
• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• Proceedings of the KIPE Conference
• /
• 2007.07a
• /
• pp.289-292
• /
• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turnoff loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, low cost, and high efficiency. The operational principle and characteristics of proposed converter are presented compared with flyback converter and verified experimentally.

• Current Optics and Photonics
• /
• v.7 no.5
• /
• pp.496-503
• /
• 2023

We present a detailed analysis of the light extraction efficiency (LEE) of a core-shell nanorod light emitting diode (LED) using finite-difference time-domain (FDTD) simulations. We found that the LEE has a deep dependence on source positions and polarization directions based on the calculated LEE results for every x and z position inside the core-shell nanorod structure. The LEEs are different for the upper part (pyramid) and the lower part (sidewall) of the core-shell nanorod owing to total internal reflection (TIR) and the generated optical modes in the structure. As a result, the LEE of sidewall is much larger than that of pyramid. The averaged LEE of the core-shell nanorod LED is also investigated with variable p-GaN thickness, n-GaN thickness, and height for the design guidelines for the optimized LEE of core-shell nanorod LEDs.

• Journal of information and communication convergence engineering
• /
• v.14 no.1
• /
• pp.35-39
• /
• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.195-196
• /
• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.5
• /
• pp.451-458
• /
• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.493-498
• /
• 2006

Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.4
• /
• pp.178-184
• /
• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).