• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.484-493
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• 2004

A new lightwave locking technique which can be used in tuning the wavelength of a local laser diode to the reference wavelength is presented in this paper. The optical frequency from the reference laser source and the optical frequency from the local slave VCO laser are heterodyned on a optical receiver, resulting in the 1.5GHz RF signal corresponding to the difference frequency between two input optical signals. The difference frequency is locked to the reference 1.5GHz oscillator source in off-set frequency locking loop. Using the commercialized microwave components, frequency difference detector can be easily established to lock the lightwave. The optical frequency of 1.55um laser diode which keeps the frequency off-set of 1.5GHz is locked to the input reference optical signal with the locking range of 320MHz.

• Journal of Biomedical Engineering Research
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• v.17 no.4
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• pp.499-506
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• 1996

Blood flow velocimeter is an essential device to measure the blood flow in skin tissue. In this study, we developed a high-speed LDV(laser Doppler Velocimeter) that has real time processing capability using a DSP(digital signal processing) chip and is able to continuously measure information about blood-flow based on a noninvasive method using self-mixing type laser diode. This LDV system has a simpler structure than any other typical blood flow velocimeter and is composed of new self-mixing probe, stabilizer circuits DSP board, and interf'ace boule We measured velocity of speaker-unit by operational frequencies to identify Doppler effect of this system, performed clinical experiment on bare finger tip and compared it with a commercial euipment BPM403A(USA).

• Korean Journal of Optics and Photonics
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• v.28 no.5
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• pp.229-235
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• 2017

A widely tunable U-shaped SGDBR (Sampled Grating Distributed Bragg Reflector) laser diode is designed and analyzed by means of a time-domain simulation. The U-shaped SGDBR laser diode consists of SGDBR, active, phase, and TIR (Total Internal Reflection) mirror sections, so the coupling losses across the sections should be carefully considered. The tuning range of the designed U-shaped SGDBR laser is about 1525-1570 nm, which is confirmed by the simulation. The simulation results show that the loss in the TIR mirror region should be less than about 2 dB, and the refractive-index difference at the butt coupling between the passive and active regions should be less than 0.1, to provide the complete tuning range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.9-19
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• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.24-30
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• 2006

Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of $8.45\times10^{-8}cm^{-1}$.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.1-5
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• 2004

Tunable diode laser absorption spectroscopy was performed for analysis of the H$_2$$^{18}$ O/H$_2$$^{16}$ O isotope ratio of a water sample which was enriched by the membrane distillation method. In order to improve the signal-to-noise ratio, the wavelength modulation spectroscopic method was used with a lock-in amplifier. The fringe noise could be suppressed by using the FFT (Fast Fourier Transform) lowpass filter and the optimization of the modulation depth of the laser frequency. The maximum deviation of $\delta$-value was measured to be$\pm$4$\textperthousand$.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.270-273
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• 2007

We have investigated the output characteristics of the 946 nm Nd:YAG laser which is longitudinally pumped by a fiber coupled laser diode. The temperature of a Nd:YAG crystal mount was kept constant by a controller with thermoelectric cooler. As a result, we measured more intense output at a low temperature, and then the maximum output power was measured to be 870 mW when the pumping power and the temperature were 9.95 W and $5^{\circ}C$, respectively. It appeared that output was decreased above 10 W pump power because of the thermal effects in gain medium.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.74-81
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• 2010

A modeling methodology for the analysis of injection-locked Fabry-Perot laser diodes (FP-LDs), promising for cost-effective WDM-PON sources, is proposed. The time-domain large-signal model that is used is found to provide quite similar results to some experimental ones. With our methodology, we model characteristics of FP-LDs, such as influence of reflectivity at a facet and detuning on injection-locking. The eye diagram characteristics are also investigated. It is observed that the facet reflectivity at the injection side should be lower than 1% to provide stable operation in terms of good side-mode suppression ratio and independence from detuning between narrow-band injection noise and LD modes. It is also observed that good eye opening can be obtained for 155 Mbps modulation while the parameters such as the active region thickness should be properly optimized to obtain reasonable eye opening at 1.25 Gbps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.314-320
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• 1998

In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.