• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.544-547
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• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

• Journal of Biomedical Engineering Research
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• v.19 no.4
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• pp.369-377
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• 1998

This paper describes the results of investigations comparing the relative in vitro responses of different signal processing algorithms for laser Doppler flowmetry(LDF) using self-mixing effect of laser diode(LD). A versatile laser Doppler system is described which enabled complex signal processing to be implemented relatively simply using digital analysis. The flexibility of the system allowed a variety of processing algorithms to be studied by simply characterising the algorithm of interest under software control using a personal computer. Two in-vitro physical models are also presented which was used to maintain reproducible fluid flows Flows of particles were studied in two physical models using a 780nm laser diode source. The results show that frequency weighted algorithms(first and second moments, rate to zero moment) are responsive to particle velocity more than concentration, whereas non-weighted algorithm (zero moment responds to concentration and velocity.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.371-376
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• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.

• Journal of the Optical Society of Korea
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• v.15 no.4
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• pp.362-367
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• 2011

Organic ($Alq_3$) film, which was coated on a donor plate, was transferred to an organic light emitting diode (OLED) substrate with help of heat generated by a dithering laser beam. The laser beam was diffracted in an acousto-optic modulator (AOM), then focused on the laser-to-heat converting layer of the donor plate; the focused spot followed trajectories guided by rotation of a Galvano-mirror. Three different functional waveforms, sine wave, square wave, and saw tooth wave were applied to the AOM as modulation signal to generate the dithering beam. The fluorescence microscope images of the donor plate showed that the patterns of removed $Alq_3$ film were affected considerably by the modulation waveforms and the phase difference between adjacent dithering beams. Further, the printed images of Alq3 film on the OLED substrate were different from the patterns of removed Alq3 film. Atomic force microscope images indicated that not only direct transfer but also deposition by sublimated vapor of Alq3 contributed to the pattern formation. Printed patterns affected considerably the electricity-to-light conversion characteristics of OLEDs. For uniform transfer, not only the phase relation of dithering beam lines but also adequate waveform were important.

• Journal of Welding and Joining
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• v.31 no.4
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• pp.7-12
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• 2013

The dissimilar welding between magnesium alloy and steel sheet was required in automobile industry to increase the strength of the dissimilar joints. Laser brazing is one of the good joining processes for Mgsteel dissimilar joint. In this study, the effect of coating materials was evaluated on the laser brazing for the dissimilar joint between AZ31 and coated steels such as Zn, Sn and Ni. Diode direct laser was used to braze the lap-edge joint with Mg600 filler wire and Superior #21 flux. The wettability was best on Zn coated steel. The interlayer was formed at the interface between brazement and steel for all coating materials. The strengths of brazed specimen were 146.5N/mm, 204.6N/mm and 101.6N/mm for Zn, Sn and Ni coated steel respectively.

• Current Optics and Photonics
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• v.6 no.4
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• pp.407-412
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• 2022

We report on a diode-laser-pumped mode-locked Yb:KGW laser system, which delivers ultrashort pulses down to 89 fs at a repetition rate of 63 MHz, with an average power of up to 5.6 W. A fiber-coupled diode laser at 981 nm, operated with a compact driver, is used to optically pump the gain crystal via an off-axis parabolic mirror. A semiconductor saturable-absorber mirror is used to initiate the pulsed operation. Laser characteristics such as the pulse duration, spectrum bandwidth, and output power are investigated by varying the intracavity dispersions via changing the number of bounces between negative-dispersive mirrors within the cavity. Short pulses with a duration of 89 fs, a center wavelength of 1,027 nm, and 3.6 W of output power are produced at a group-velocity dispersion (GVD) of -3,300 fs². As the negative GVD increases, the pulse duration lengthens but the output power at the single-pulse condition can be enhanced, reaching 5.6 W at a GVD of -6,600 fs². Because of pulse broadening at high negative GVDs, the highest peak intensity is achievable at a moderate GVD with our system.

• Biomedical Science Letters
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• v.14 no.2
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• pp.91-96
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• 2008

Light Emitting Diode (LED) of 880 nm was used as a function of luminosity in culture of the photosynthetic bacteria including Rhodobacter sp.. An array of 880 run LED was driven with an energy density of $6.0mW/cm^2$. In processing time, we were able to show that the cell growth were gained of significant changes in the pigment and in the dry weight. And we also showed that photosynthetic bacteria had the resonable relativity of optical density to dry weight. LED-880nm is of great significance for the potential use of photo-bioreactor construction.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• Electrical & Electronic Materials
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• v.13 no.1
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• pp.11-18
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• 2000

최근 10여년 사이에 III-nitride 화합물 반도체가 전 세계적으로 주목을 받고 있다. 이는 질화물의 조성에 따라 자외선 영역에서 가시 광선의 전 파장, 측 자색에서 적색 영역대의 광소자 및 고온 고출력 전자소자에 쓰일 수 있기 때문이다. 지금까지 고휘도의 청색, 녹색 LED(Light Emitting Diode)는 상용화되어 있어, UC LD(Ultra-Violet Laser Diode)는 10,000 시간 상온 연속 발진에 성공하여 상용화의 단계에 이르고 있다. 그러나 많은 연구 투입에 비례하여 얻어지는 결과물의 효율은 그리 높지 않은 분야로 LED를 수준 급으로 상용화하는 곳은 세계에서 5개정도로 국한되면, 그 기술이 전파됨이 그리 쉽지 않다. LD(laser Diode)의 경우 상용화 초기 단계로 보편적 신뢰성을 확보하기까지는 또 다른 breakthrough 확보가 필요하며, 궁극적인 기술 전개는 기판을 해결하는 것에서 올 수 있다. 본 논문에서는 이러한 III-nitride 반도체 소자 개발을 가능하게 한 MOCVD(Metaloganic Chemical Vapor Deposition) 결정 성장 방법과, 기존에 사용화 되어 있는 LED 소자 특성 및 국내외 개발 동향 및 향후 발전 방향을 소개하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.