• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1057-1062
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• 2001

We investigated the change of mechanical properties for TiNi shape memory alloy by heat treatment. 6061Al matrix composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum casting. TiNi alloy has the maximum tensile strength at 673K treated and there is no change of tensile strength and hardness at 448K treated. The composites, prepared by vacuum casting, showed good interface bonding by vacuum casting. It was about 3$\mu\textrm{m}$ of thickness of the diffusion layer. Tensile strength of the composite was in higher than that of 6061Al alloy as increased value of about 70MPa at room temperature and about 110MPa at 363K. We thought that the increase of the tensile strength at 363K was due to reverse transformation of the TiNi shape memory alloy.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.3
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• pp.459-464
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• 2013

The purpose of a micro-mixing device is to enhance the mixing by increasing the diffusion effect between different types of flows. There have been many attempts to actively or passively increase mixing. However, those studies were limited to lab-scale experiments because the production of devices requires a series of processes, time, cost, and the mixing quality itself. For this reason, this study attempted to develop a quick and simple process for micro-mixing device fabrication by using conventional machining and bonding processes and applying ultrasonic waves from the outside of the mixing device. The mixing quality was quantified by using the mixing index, and the results showed that the proposed system increases the mixing from ~33% to ~10% with respect to the flow rates.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.2
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• pp.315-322
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• 2008

Titanium and its alloys have excellent corrosion resistance, high strength to weight ratios and creep properties in high temperature, which make them using many various fields of application. Especially, pure titanium, which has outstanding resistance for the stress corrosion cracking, crevice corrosion, pitting and microbiologically influenced corrosion, brings out to the best material for the heat exchanger, ballast tank, desalination facilities, and so on. Responding to these needs, welding processes for titanium are also being used GTAW, GMAW, PAW, EBW, LBW, resistance welding and diffusion bonding, etc. However, titanium is very active and highly susceptible to embrittlement by oxygen, nitrogen, hydrogen and carbon at high temperature, so it needs to shield the weld metal from the air and these gases during welding by non-active gas. In this study, it was possible to get sound beads without humping and spatter with a decrease of peak power according to increase of pulse width, change of welding speed and overlap rate for heat input control, and shield conditions at pulsed laser welding of titanium plates for Lap welding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.475-480
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• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.1-7
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• 2001

In order to form a uniform oxidation layer of spinel phase on Kovar which helps the strong bonding in Kovar-to-glass sealing, the humidified $N_2/H_2$ was used as an oxidation atmosphere. The oxidation of Kovar was controlled by diffusion mechanism and the activation energy was 31.61 kacl/mol at 500~$800^{\circ}C$. After oxidation at $600^{\circ}C$, the external oxidation layer was below 0.5 $\mu \textrm{m}$ thick. According to TEM analysis, oxidized Kovar was spinel its lattice parameter of 7.9 $\AA$. Oxidation of under $600^{\circ}C$ and in a humidified $N_2/H_2$ atmosphere, Kovar was found to be appropriate for the Kovar-to-glass sealing.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2002.10a
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• pp.127-130
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• 2002

The 2.5 vol% TiNi/6061Al composites were fabricated by permanent mold casting, and its microstructures and tensile test for the cold rolled composites with maximum 50% reduction ratio were investigated. In the case of TiNi fiber with 2mm interval in preform, the interface bonding of fabricated composites were good. EPMA analysis results were found the small amount of Mg, Si segregated interface of diffusion layer. Transverse section of TiNi fiber was decreased with increasing reduction ratio and 40% reduction ratio was observed microcrack from TiNi fiber. And the tensile strength of composites at 38% reduction ratio was 194MPa. In the case of over 38% reduction ratio, the decrease of the tensile strength was due to TiNi fiber rupture by excess working. The fracture mode was appeared brittle fracture with increasing reduction ratio

• Journal of Technologic Dentistry
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• v.28 no.1
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• pp.19-26
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• 2006

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens of Ni-Cr alloy, which is 0.8mm in thickness, within the porcelain furnace of 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. Oxide film was observed form of the fired specimens with scanning electron microscope (SEM), and at the same time it measured Electron Probe Micro Analyzer (EPMA). The result of this study were as follows: 1. Cr oxide film and Nb oxide film were observed from the surface of specimen to be controlled at a rate of Nb 1%. 2. Nb oxide film was observed from the interface of specimens to be controlled at a rate of Nb 1% and 3%. 3. The stability of oxide films that treated in air were more stable than treated under vacuum.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.348-351
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• 1995

A modified silicon direct bonding method has been developed alloying an intimate contact between grooved and smooth mirror-polished oxide-free silicon wafers. A regular set of grooves was formed during preparation of heavily doped $p^+$-type grid network by oxide-masking und boron diffusion. Void-free bonded interfaces with filing of the grooves were observed by x-ray diffraction topography, infrared, optical. and scanning electron microscope techniques. The presence of regularly formed grooves in bending plane results in the substantial decrease of dislocation over large areas near the interface. Moreover two strongly misoriented waters could be successfully bonded by new technique. Diodes with bonded a pn-junction yielded a value of the ideality factor n about 1.5 and the uniform distribution of series resistance over the whole area of horded pn-structure. The suitability of the modified technique was confirmed by I - V characteristics of power diodes and reversly switched-on dynistor(RSD) with a working area about $12cm^2$. Both devices demonstrated breakdown voltages close to the calculation values.