• 제목/요약/키워드: diffusion barriers

검색결과 69건 처리시간 0.025초

REVIEW AND COMPILATION OF DATA ON RADIONUCLIDE MIGRATION AND RETARDATION FOR THE PERFORMANCE ASSESSMENT OF A HLW REPOSITORY IN KOREA

  • Baik, Min-Hoon;Lee, Seung-Yeop;Lee, Jae-Kwang;Kim, Seung-Soo;Park, Chung-Kyun;Choi, Jong-Won
    • Nuclear Engineering and Technology
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    • 제40권7호
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    • pp.593-606
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    • 2008
  • In this study, data on radionuclide migration and retardation processes in the engineered and natural barriers of High-Level Radioactive Waste (HLW) repository have been reviewed and compiled for use in the performance assessment of a HLW disposal system in Korea. The status of the database on radionuclide migration and retardation that is being developed in Korea is investigated and summarized in this study. The solubilities of major actinides such as D, Th, Am, Np, and Pu both in Korean bentonite porewater and in deep Korean groundwater are calculated by using the geochemical code PHREEQC (Ver. 2.0) based on the KAERI-TDB(Korea Atomic Energy Research Institute-Thermochemical Database), which is under development. Databases for the diffusion coefficients ($D^b_e$ values) and distribution coefficients ($K^b_d$ values) of some radionuclides in the compacted Korean Ca-bentonite are developed based upon domestic experimental results. Databases for the rock matrix diffusion coefficients ($D^r_e$ values) and distribution coefficients ($K^r_d$ values) of some radionuclides for Korean granite rock and deep groundwater are also developed based upon domestic experimental results. Finally, data related to colloids such as the characteristics of natural groundwater colloids and the pseudo-colloid formation constants ($K_{pc}$ values) are provided for the consideration of colloid effects in the performance assessment.

금속연료-피복재 상호확산 거동에 미치는 기상증착법의 영향 (Effect of Vapor Deposition on the Interdiffusion Behavior between the Metallic Fuel and Clad Material)

  • 김준환;이병운;이찬복;지승현;윤영수
    • 대한금속재료학회지
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    • 제49권7호
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    • pp.549-556
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    • 2011
  • This study aimed to evaluate the performance of diffusion barriers in order to prevent fuel-cladding chemical interaction (FCCI) between the metallic fuels and the cladding materials, a potential hazard for nuclear fuel in sodium-cooled fast reactors. In order to prevent FCCI, Zr or V metal is deposited on the ferritic-martensitic stainless steel surface by physical vapor deposition with a thickness up to $5{\mu}m$. The diffusion couple tests using uranium alloy (U-10Zr) and a rare earth metal such as Ce-La alloy and Nd were performed at temperatures between 660~800$^{\circ}C$. Microstructural analysis using SEM was carried out over the coupled specimen. The results show that significant interdiffusion and an associated eutectic reaction ocurred in the specimen without a diffusion barrier. However, with the exception of the local dissolution of the Zr layer in the Ce-La alloy, the specimens deposited with Zr and V exhibited superior eutectic resistance to the uranium alloy and rare earth metal.

인쇄기판형열교환기 핵심치수 구조설계 (Structural Design for Key Dimensions of Printed Circuit Heat Exchanger)

  • 김용완;강지호;사인진;김응선
    • 한국압력기기공학회 논문집
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    • 제14권1호
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    • pp.24-31
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    • 2018
  • The mechanical design procedure is studied for the PCHE(printed circuit heat exchanger) with electrochemical etched flow channels. The effective heat transfer plates of PCHE are assembled by diffusion bonding to make a module. PCHE is widely used for industrial applications due to its compactness, cost efficiency, and serviceability at high pressure and/or temperature conditions. The limitations and technical barriers of PCHE are investigated for application to nuclear components. Rules for design and fabrication of PCHE are specified in ASME Section VIII but not in ASME Section III of nuclear components. Therefore, the calculation procedure of key dimensions of PCHE is defined based on ASME section VIII. The effective heat transfer region of PCHE is defined by several key dimensions such as the flow channel radius, edge width, wall thickness, and ridge width. The mechanical design procedure of key dimensions was incorporated into a program for easy use in the PCHE design. The effect of assumptions used in the key dimension calculation on stress values is numerically investigated. A comparative analysis is done by comparing finite element analysis results for the semi-circular flow channels with the formula based sizing calculation assuming rectangular cross sections.

A Control Volume Scheme for Three-Dimensional Transport: Buffer and Matrix Effects on a Decay Chain Transport in the Repository

  • Lee, Y.M.;Y.S. Hwang;Kim, S.G.;C.H. Kang
    • Nuclear Engineering and Technology
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    • 제34권3호
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    • pp.218-231
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    • 2002
  • Using a three-dimensional numerical code, B3R developed for nuclide transport of an arbitrary length of decay chain in the buffer between the canister and adjacent rock in a high- level radioactive waste repository by adopting a finite difference method utilizing the control- volume scheme, some illustrative calculations have been done. A linear sorption isotherm, nuclide transport due to diffusion in the buffer and the rock matrix, and advection and dispersion along thin rigid parallel fractures existing in a saturated porous rock matrix as well as diffusion through the fracture wall into the matrix is assumed. In such kind of repository, buffer and rock matrix are known to be important physico-chemical harriers in nuclide retardation. To show effects of buffer and rock matrix on nuclide transport in HLW repository and also to demonstrate usefulness of B3R, several cases of breakthrough curves as well as three- dimensional plots of concentration isopleths associated with these two barriers are introduced for a typical case of decay chain of $^{234}$ Ulongrightarrow$^{230}$ Thlongrightarrow$^{226}$ Ra, which is the most important chain as far as the human environment is concerned.

Effect of B-Cation Doping on Oxygen Vacancy Formation and Migration in LaBO3: A Density Functional Theory Study

  • Kwon, Hyunguk;Park, Jinwoo;Kim, Byung-Kook;Han, Jeong Woo
    • 한국세라믹학회지
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    • 제52권5호
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    • pp.331-337
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    • 2015
  • $LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

Simulation of the Migration of 3H and 14C Radionuclides on the 2nd Phase Facility at the Wolsong LILW Disposal Center

  • Ha, Jaechul;Son, Yuhwa;Cho, Chunhyung
    • 방사성폐기물학회지
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    • 제18권4호
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    • pp.439-455
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    • 2020
  • Numerical model was developed that simulates radionuclide (3H and 14C) transport modeling at the 2nd phase facility at the Wolsong LILW Disposal Center. Four scenarios were simulated with different assumptions about the integrity of the components of the barrier system. For the design case, the multi-barrier system was shown to be effective in diverting infiltration water around the vaults containing radioactive waste. Nevertheless, the volatile radionuclide 14C migrates outside the containment system and through the unsaturated zone, driven by gas diffusion. 3H is largely contained within the vaults where it decays, with small amounts being flushed out in the liquid state. Various scenarios were examined in which the integrity of the cover barrier system or that of the concrete were compromised. In the absence of any engineered barriers, 3H is washed out to the water table within the first 20 years. The release of 14C by gas diffusion is suppressed if percolation fluxes through the facility are high after a cover failure. However, the high fluxes lead to advective transport of 14C dissolved in the liquid state. The concrete container is an effective barrier, with approximately the same effectiveness as the cover.

A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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건강 어플리케이션 비이용자에 관한 연구: 혁신확산이론을 중심으로 (An Analysis of Non-users of Mobile Healthcare Applications: Based on Diffusion of Innovations Theory)

  • 이용정;배범준
    • 정보관리학회지
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    • 제34권1호
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    • pp.135-154
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    • 2017
  • 본 연구는 모바일 건강 어플리케이션의 사용을 방해하는 요인을 혁신확산이론에 따라 분석하고자 하였다. 본 연구는 유의적 표집방법에 따라 비수용자(non-adopters)와 사용 중단자(rejecters)로 구성된 대학생을 모집하였다. 연구 참여자는 총 44명으로 남학생 32명과 여학생 12명으로 구성되었으며 서면인터뷰를 실시하였다. 연구 결과, 상대적 유익성, 복잡성, 시험가능성 및 관찰가능성 등과 같은 속성은 건강 어플리케이션의 채택이나 지속적 이용을 방해하는 심각한 요인으로 작용하지 않았으나, 상대적 불이익과 적합성은 커다란 방해요인으로 작용하는 것으로 파악되었다. 본 연구의 결과는 건강 어플리케이션이라는 혁신을 확산시키고 지속적 이용을 장려하기 위해서는, 상대적 유익성이나 복잡성을 개선하기 보다는, 상대적 불이익에 대한 인식을 재고하고 생활 적합성은 강화해야 한다는 점을 시사한다.

ALD of Nanometal Films and Applications for Nanoscale Devices

  • Kim, Hyung-Jun
    • 한국결정학회지
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    • 제16권2호
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    • pp.89-101
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    • 2005
  • Among many material processing related issues for successful scaling down of devices for the next 10 years or so, the advanced gate stack and interconnect technology are two most critical research areas, which need technical innovation. The introduction of new metallic films and appropriate processing technologies are required more than ever. Especially, as the device downscaling continues well into sub 50 nm regime, the paradigm for metal nano film deposition technique research has been shifted to high conformality, low growth temperature, high quality with uniformity at large area wafers. Regarding these, ALD has sparked a lot of interests for a number of reasons. The process is intrinsically atomic in nature, resulting in the controlled deposition of films in sub-monolayer units with excellent conformality. In this paper, the overview on the current issues and the future trends in device processing technologies related to metal nano films as well as the R&D trends in these applications will be discussed. The focus will be on the applications for metal gate, capacitor electrode for DRAM, and diffusion barriers/seed layers for Cu interconnect technology.

혁신관리에 있어서 장애와 저항의 극복방안 (A Study on Conquest Plans of the Barrier and Resistance in Innovation Management)

  • 이승희;노규성
    • 한국디지털정책학회:학술대회논문집
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    • 한국디지털정책학회 2005년도 춘계학술대회
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    • pp.13-28
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    • 2005
  • The purpose of this study is to explore conquest plans of the barrier and resistance in innovation management. This paper focuses to understand the model of innovation that reflects adoption process stages and identify the factors that drive the resistance of consumers. Whenever organizations try to plan and implement some kind of innovation in organizations, they confront resistance in many ways. By understanding innovation resistance, organizations can not only design better innovations but can develop strategies to reduce resistance. Thus they accelerate innovation. Understanding the factors that drive the innovation resistance has important implications for both theoretical development and managerial action. These results indicate that people resist innovation strongly when it betrays their value, needs and beliefs or when they felt the pressure on self-conviction and mental risk, loss, and lack of knowledge.

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