• 한국자기학회지
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• 제24권6호
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• pp.186-190
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• 2014

뫼스바우어 선원 $^{57}Co/Cu$의 제조조건을 도출하기 위하여, 금속 분말 코발트(Co)를 황산에 용해시킨 후 $H_3BO_3$, KOH와 NaCl을 첨가하여 Sulfamate 도금용액을 제조 후 Cu plate 기판에 도금하였다. 도금두께는 $4{\mu}m$로 일정하게 유지하였다. 전류밀도를 $2mA/cm^2$와 $30mA/cm^2$로 유지하면서 pH에 변화를 준 결과 pH가 4 이상으로 증가하면 hcp 결정의 Co 금속 이외의 2차상이 생성되었다. pH가 증가할수록 Co 후막 표면이 거칠어 졌으며 균열된 표면형상을 관찰하였다. pH가 5까지 증가할 경우 평균입도는 54 nmfh 증가함을 확인하였다. 열처리조건을 변화시키면서 Co가 Cu기지 내에 구속되는 온도가 $900^{\circ}C$에서 2 h임을 확인하였다. 열처리는 진공 후 Ar 분위기(1.5 l/min)를 유지하면서 수행하였다.

• Applied Microscopy
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• 제45권1호
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• pp.16-22
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• 2015

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

• 한국표면공학회지
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• 제38권1호
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• 한국자기학회지
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• 제25권2호
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• pp.47-51
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• 2015

이 연구에서는 DC스퍼터링(DC Magnetron Sputtering)방식으로 제작 된 MgO 터널 장벽층을 갖는 자기터널접합을 급속 열처리 방식(Rapid Thermal Annealing)을 이용하여 열처리 공정 중의 구조적, 조성적 변화 및 스핀 수송 특성의 변화를 연구하였다. 본 연구를 통하여 급속 열처리 방식이 기존 일반적인 열처리 방식에 비하여 높은 터널링자기저항비를 얻을 수 있다는 것을 발견하였다. 또한, 열처리 시간의 단축을 통하여 Mn, Ta, Ru 등의 내부물질의 인접한 층으로의 확산을 억제할 수 있다는 것을 알 수 있었다. 유의미한 데이터를 수집하기 위하여 다양한 열처리 온도 조건과 시간조건에서 급속 열처리를 실시 한 후 자기 터널 접합의 전, 자기적 특성을 관찰하였다. 이러한 특성 변화는 향후 보다 우수하고 안정적인 자기적 특성과 열적 안정성을 갖는 자기터널접합 제작을 위해 다양하게 응용될 수 있다고 생각된다.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.160-161
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• 2002

One problem in giant magnetoresistance(GMR) spin valves and magnetic tunneling junctions(MTJ) exchange biased by Mn-based antiferromagnets is the Mn diffusion into the ferromagnetic layer and other layers upon annealing.$^{1-3}$ It seems that Mn diffusion that may occur during annealing has a key role in the exchange biasing. We have fabricated multilayers inserting the nanolayer(NL) between antiferromagnet and ferromagent using ion-beam deposition system to study the diffusion effect for the exchange bias. (omitted)

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.327-331
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• 1997

As demand for various kinds and small lot products has been increasing, batch annealing has been appreciated for its small restiction for the opteration. The cold spot of the coil is very important in the BAF(Batch annealing furnace) annealing process. Because of the annealing cycle time in the BAF, annealing was decided on the cold spot of the coil. So, we tested the effect,variation of cold spot, for hydrogen contents of atmospheric gas at the annealing furnace. As a result of several investigations. We confirmed the following characteristics ; after the heating and soaking,the cold spot of coil moved to 1/3 of coil thickness in the NHx atmospheric gas, but the mid point of the coil thickness is the cold spot in the Ax or .H/sub2. atmospheric gas. Therefore, the use of hydrogen instead of nitrogen as the protective gas,combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.560-564
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• 1996

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving qualify, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for a hydrogen contents of atmospheric gas at annealing furnace. As a result of several investigation. We confirmed for the following characteristics ; improved productivity, uniform heating, improved surface quality, saving energy. Therefore, the use of hydrogen instead of nitrogen as the protective gas, combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 대한금속재료학회지
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• 제50권10호
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1608-1610
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• 2000

In this work, the effect of annealing on physical and electrical properties of XLPE cable insulation was investigated. One sample was non-annealed and the other two samples were treated under air circulated oven at 80$^{\circ}C$ for five and ten days. In the DSC patterns of annealed specimen, new peaks appeared at near 80$^{\circ}C$ as a proof of thermal history. The degree of crystallinity increased by annealing effect. In the FT-IR spectrums, the change of absorbances to acetophenone and cumyl alcohol were observated according to the radial direction of cable insulation. They slowly diffused into both semi-conductive layer of the cable in proportion to annealing time and lastly led to near equilibrium state through cable insulation. The AC breakdown strength did not increased but the values were stabilized by effects of crystallinity and diffusion of by-products.