• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.614-615
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• 2005

The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, roll-to-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate ($LEXAN^{(R)}$) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen,chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate ($LEXAN^{(R)}$) films and its compatibility with OLED device fabrication processes.

• Journal of the Optical Society of Korea
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• v.13 no.4
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• pp.478-483
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• 2009

An optical sheet with a cone array is designed, simulated, and fabricated in order to substitute the dual crossed prism sheets in the edge-type LCD backlight. The optimum structure of cone textures that is compatible with the dual crossed prism sheets was obtained by simulating the backlight installed with the cone array optical sheet. A SU-8 photoresist films of thickness $30{\sim}50{\mu}m$ were spin-coated on a polyethylene terephtalate film (PET), and the cone texture array was formed by using the diffuse lithography that employed a photomask with circular patterns and an optical diffuser.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.445-446
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• 2007

The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, rollto-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate (LEXAN(R)) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen, chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate (LEXAN(R)) films and its compatibility with OLED device fabrication processes.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.31-42
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• 1999

The effect was investigated that aluminium in the zinc bath has on the coating adhesion of Hot-rolled Galvanized Iron(HGI) manufactured without pickling process. It is thought that the coating adhesion of HGI manufactured without pickling process is good due to the fact that increasing aluminium content in the zinc bath makes zinc and aluminium diffuse to the cracks or pores in the scale formed through the reduction heat treatment, and Fe-Zn-Al compound with good ductility is formed in the scale layer and plays a role of anchor between zinc coating and substrate. It is possible that HGI with the good coating adhesion was produced without pickling treatment in the zinc bath with more that 3wt% of Al content even at the $550^{\circ}C$ of conventional reduction heating temperature. In creasing the temperature of heating section and aluminium content in the zinc bath prevents the Zn-Fe alloy. The corrosion resistance of HGI manufactured without pickling process is excellent because of the mixed reaction of zinc sacrifice and aluminium passivity film.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.5
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Investigative Magnetic Resonance Imaging
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• v.21 no.3
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• pp.177-182
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• 2017

Schwannomas are benign nerve sheath tumors that are typically located in soft tissue. Occasionally, schwannomas involve osseous structures. These intraosseous schwannomas are generally benign neoplasms that account for less than 0.2% of primary bone tumors. Schwannomas are very rarely observed in long bones. We present a case of a schwannoma affecting the proximal femur with a coincident subchondral fracture of the femoral head. A 38-year-old-male presented with left hip pain without deteriorating locomotor function. Plain film radiographs displayed a lobulating contoured lesion within the intertrochanteric portion of the femur. The magnetic resonance imaging (MRI) scans showed a tumor occupying the intertrochanteric region. Diffuse bone marrow edema, especially in the subchondral and head portions of the femur that was possibly due to the subchondral insufficiency fracture was also noted. The lesion was surgically excised and bone grafting was performed. Histologically, there was diffuse infiltrative growth of the elongated, wavy, and tapered cells with collagen fibers, which are findings that are characteristic of intraosseous schwannoma. Although very rare, intraosseous schwannoma should be included in the differential diagnosis of radiographically benign-appearing, non-aggressive lesions arising in the femur. The concomitant subchondral fracture of the femoral head confounded the correct diagnosis of intraosseous schwannoma in this case.

• Journal of Powder Materials
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• v.23 no.3
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• pp.240-246
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• 2016

In order to improve the high-temperature oxidation stability, sintered 434L stainless steel is studied, focusing on the effect of the addition of metallic oxides to form stable oxide films on the inner particle surface. The green compacts of Fecralloy powder or amorphous silica are added on STS434L and oxidized at $950^{\circ}C$ up to 210 h. The weight change ratio of 434L with amorphous silica is higher than that of 434L mixed with Fecralloy, and the weight increase follows a parabolic law, which implies that the oxide film grows according to oxide diffusion through the densely formed oxide film. In the case of 434L mixed with Fecralloy, the elements in the matrix diffuse through the grain boundaries and form $Al_2O_3$ and Fe-Cr oxides. Stable high temperature corrosion resistance and electrical resistivity are obtained for STS434L mixed with Fecralloy.