• Korean Journal of Materials Research
• /
• v.5 no.2
• /
• pp.151-156
• /
• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.48.2-48.2
• /
• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• Journal of the Korean Ceramic Society
• /
• v.46 no.3
• /
• pp.317-322
• /
• 2009

Statistical designs of experiments were applied in order to understand the effect of processing variables on the brightness of inorganic electroluminescent displays. The main effects and interaction of phosphor and dielectric layers are estimated to be statistically significant. Additional improvement was made on removing the pores in the thick films, using the defoaming in pastes and cold isostatic pressing in bonding the top and bottom parts of the inorganic electroluminescent devices. Such optimization contributed to the reduction in the corresponding threshold voltage and enhancement in the brightness.

• Proceedings of the Acoustical Society of Korea Conference
• /
• spring
• /
• pp.385-388
• /
• 2000

Electromagnet ic wave falling on solid surface acts on the medium with a force. This force brings about a redistribution of surface charges and the surface potential is varied. By measuring this potential variations, the surface electrical properties on conductors, semicionductors and dielectrics can be tested. In this paper, two dimensional photocharge voltage on the $LiNbO_3$ wafer induced by He-Ne laser beam, the temperature characteristics and the capacitive coupling test structure for the photocharge voltage measurement for the dielectrical materials are shown.

• Journal of the Korean Ceramic Society
• /
• v.21 no.4
• /
• pp.341-348
• /
• 1984

$BaTiO_3$ and $SrTiO_3$ were mixed with the mole ratio of 35:65， 50:50 and 65:35 and heated at 1100~120$0^{\circ}C$ for 1~64 hours. The dielectrics of $BaTiO_3$-$SrTiO_3$ system were investigated as a function of amount of solid solution formed. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of heating of soaking time for the same composition and heating temperature. This can be explained by the homogeneous distribution of $Ba^{2+}$ and $Sr^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$ in the $BaTiO_3$-$SrTiO_3$system because of decreasing the lattice constant.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.02a
• /
• pp.67-67
• /
• 2007

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 1999.05a
• /
• pp.411-414
• /
• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1305-1307
• /
• 2007

We show that the electrical properties of organic thinfilm transistors(OTFTs) can be enhanced by controlling the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer($SiO_2$) affect on the interface energy of electrode on $SiO_2$ layer. Contact angle measurement and FT-IR spectrum shows that the interface is properly modified. OTFTs device with high efficiency has been realized through modification of interface layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.29-33
• /
• 1995

The ($Ba_{0.85}Ca_{0.15}$)$TiO_3$-Zndielectrics was made by ZnO mol ratio from 0.1 to 0.4. The characteristics of structural was analyzed by SEM and XRD and the insulating properties was examined by dielectric constant and resistivity. The grain size were 1.3[$\mu\textrm{m}$] and those shape ware a rectangular. The relativity density were over 90[%] in all specimen. It was found that the best insulating characteristics were obtained for 0.3 mol ratio.

• Korean Journal of Crystallography
• /
• v.12 no.2
• /
• pp.76-80
• /
• 2001

We have studied the effect of sintering conditions on the long-range order parameter of the 1 : 2 cation ordering in Ba(Mg/sub 1/3/Nb/sub 2/3/)O₃microwave dielectrics prepared through a columbite precursor method. It is found that the order parameter depends strongly on the sintering conditions. As the heat-treatment time increases at 1350℃, the long-range order parameter decreases. When sintered at 1500℃ for 4 hours, BMN shows a high long-range order parameter of 0.94.