• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.104-104
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• 2010

With the advent of nano-particle fillers in insulating materials, the insulating materials of superior quality have come to fore. In the recent past, nanocomposite LDPE/XLPE (Low Density Polyethylene/Cross Linked Polyethylene) power cable dielectrics have been synthesized. A preliminary evaluation of these new class of materials seem to show that, addition of small amounts of sub-micron inorganic fillers improved the dielectric properties of the composite, in particular, the volume resistivity, and the DC breakdown strength. The thermal behaviour, for example, the stability of composites against decomposition and ensuing electrical failure, do not seem to have been addressed. In a conventional XLPE insulated cable, the average thermal breakdown strength and maximum temperature at the onset of breakdown were seen to be markedly lower than the corresponding intrinsic breakdown strength and decomposition temperature. In this page, analysis of DC Breakdown of nano-composite insulating material for HVDC Cable is introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.452-455
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• 2003

[ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.232-240
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• 1999

In this study, the $(1-\chi)Ba(Mg_{\fraction one-third}Ta_{\fraction two-thirds}O_3-\chiBa(Co_{\fraction one-third}\Nb_{\fraction two-thirds})O_3$ ceramics($\chi$=0.3,0.4,0.5,0.6) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500~1575^{\circ}C$ for5 hours in air. The BMT-BCN ceramics have a complex perovskite structure, and have peaks of (101), (102), (201), (202) and (212). Increasing the sintering temperature, dielectric constant was increased. Temperature coefficients of resonant frequency of the specimens were decreasing with increasing BCN content. In the case of the 0.7BMT-0.3BCN ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 28, 235500 at ㎓ and -$1.2 ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.202-203
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• 2005

To recognize whether admixture affects some $(Ba_{0.6}Sr_{0.4})TiO_3$, powder in this research $Li_2CO_3$, MgO, $MnO_2$ adding each 3 wt % by Tape casting method thick film make. Sitering temperature lowered 1300$^{\circ}C$ adding $Li_2CO_3$, and density is 5.942g/$cm^3$, and specific inductive capacity increases about decuple and displayed 4000. Climbed sitering temperature 1400$^{\circ}C$ adding MgO, specific inductive capacity reduced 1/2 times. Lowered sintering temperature 1325$^{\circ}C$ low adding $MnO_2$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.239-240
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• 2006

For longer than picosecond pulses, bulk damage inside defect-free dielectrics involves the heating and multiplication of spurious electrons by the incident laser beam and transfer of this energy to the lattice. The situation is quite different for femtosecond pulses which are shorter than the time scale for electron energy transfer to the lattice. Damage caused by these pulses is produced with smaller statistical uncertainty and is controllable on a microscopic scale. These properties can be exploited to produce laser devices such as arrays of damage dots for all optical memories with high data storage density or arrays of parallel grooves to form transmission gratings. In this work, we observed characteristic of the femtosecond laser machining in BK7 and fused silica.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.