• 한국전자파학회논문지
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• 제28권5호
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• pp.355-365
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• 2017

본 논문에서는 간접급전 패드를 이용한 이중 대역 GPS 패치 안테나를 제안하였다. 제안된 안테나는 GPS L1 대역에서 공진하는 상부패치, L2 대역에서 공진하는 하부패치, 중간층에 위치하는 2개의 간접급전 패드로 구성되며, 광대역 원형 편파 특성구현을 위해 하이브리드 칩커플러를 사용하여 두 급전 포트 사이에 $90^{\circ}$의 위상차를 갖도록 급전하였다. 제안된 개별 안테나의 측정 결과, 전면 방향 이득은 GPS L1, L2 대역에서 각각 3.0 dBic, 5.1 dBic를 나타내며, 축비 특성은 각각 3.3 dB, 0.3 dB를 나타내는 것을 확인하였다. 제안된 안테나를 동일한 유전체 기판 가장자리에 7소자 배열하여 제작하여 active element pattern을 측정한 결과, 전면 방향 이득은 GPS L1, L2 대역에서 각각 -0.4 dBic, -2.4 dBic를 나타내어 GPS 배열안테나의 개별 소자로 사용 가능함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• 한국진공학회지
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• 제6권1호
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• pp.36-43
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• 1997

Pt/Ti/$SiO_2$/Si 기판상에 고주파 마그네트론 스퍼터링 방식으로 PZT 박막[두께:3000 $\AA$]을 증착하고 RTA방식으로 후속 열처리[열처리온도:$550^{\circ}C$~$650^{\circ}C$, 열처리 시간:10초~50 초]를 실시하여 직경 0.2mm소자의 FECAPs(ferroelectric capacitors)를 제작하였다. 제작된 커패시터의 유전상수($\varepsilon_r$)와 잔류분극($2P_r$)은 $650^{\circ}C$로 30초간 열처리한 시편에서 $\varepsilon_r$ (1kHz)=690, 2Pr(-5V~5V sweep)=22$\muC/\textrm{cm}^2$로 가장 높게 나타났으며 유전정접(tan $\delta$)과 누설전류(Jl)는 $600^{\circ}C$에서 30초간 열처리한 시편에서 $tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$로 가장 낮게 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.799-801
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• 1988

This paper was studied on the effects of Ca-La-Nb substitution and Zr/Ti ratio variation to Pb(Zr, Ti)$O_3$ system on structural, electrical, optical and sound level characteristics in order to develope the piezoelectric and electrooptic ceramic devices. Also the specimens were prepared by the two stage sintering technique. The molecular formular was X($CaO{\cdot}1/4La_{2}O_{3}{\cdot}1/4Nb_{2}O_{5}){\cdot}(1-X)Pb(Zr_{Y}Ti_{1-Y})O_{3}$(x=100X, y=100Y), and the variation of x was $6{\sim}12$, y was 60${\sim}$49 and second stage sintering time was 20${\sim}$40 hours. The experimental results obtained from this study are as follows : 1. The density was decreased, the grain size was increased according to increase of Ca-La-Nb substitution. 2. The crystal structure was rhombohedral in composition 6/60/40, and the crystal structure was tetragonal and cubic according to increase of Ca-La-Nb substitution. 3. The Ca substitution of PZT system enhanced the sintering property. The Pb site vacancy resulting from the substitution of La-Nb increased the dielectrical constant, the piezoelectric charge constant, the dielectric loss and decreased the coercive field. 4. The resistivity of PZT system which has the P type conduction mechanism increased according to substitution of La-Nb because of the substituent acting as donor. 5. The PZT ceramics varied from ferroelectric substance according to increase of Ca-La-Nb substituent. The coercive field and saturation remanent polarization decreased, and at last straight line according to increase of La-Nb substitution. 6. The amount of Ca-La-Nb substitution to improve the light transmittance of speciment was 10 mol%, the Zr/Ti ratio was 49/51, and the second stage sintering time was 40 hours. 7. According to Ca-La-Nb substitution, the specimens was to be transparent. The 7.5/51/49 specimen was suitable for transparent sound vibrator because it had 58% light transmittance (thick 0.2[mm], wave length 700[mm]) and 48% electromechanical coupling factor.

• 한국세라믹학회지
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• 제38권10호
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• pp.948-952
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• 2001

스크린 인쇄법으로 알루미나 기판 위에 PZT 후막을 제조하였으며, 공기 또는 Pb 분위기의 $750{\sim}1050^{\circ}C$에서 1시간 동안 소결하여 소결 조건이 후막의 물성에 미치는 영향을 조사하였다. 공기 중에서 $950^{\circ}C$ 이상의 온도로 소결한 PZT 후막에는 파이로클로 상이 제 2상으로 존재하고 있었으며, Pb분위기에서 소결한 PZT 후막이 공기 중에서 소결한 후막보다 치밀한 미세구조와 큰 유전상수 그리고 잘 발달된 P-E 이력특성을 보였다. $900^{\circ}C$의 Pb 분위기에서 소결한 PZT 후막은 잘 포화된 전형적인 강유전 P-E 이력곡선 모양을 보였으며, 잔류분극과 항전계가 각각 $29.8{\mu}C/cm^2$, 48.4 kV/cm이었다.

• 한국세라믹학회지
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• 제54권2호
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• pp.150-157
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• 2017

Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.